Please help support CiteULike by taking part in our survey.
CiteULike Search Register Log in
CiteULike is a free online bibliography manager. Register and you can start organising your references online.

A complex luminescent defect in Be-doped oxygen-rich silicon

by: S. E. Daly, M. O. Henry, K. G. Mcguigan, Do M. C. Carmo
Semiconductor Science and Technology, Vol. 11, No. 7. (1996), pp. 996-1001.

X Abstract

A photoluminescence (PL) study of oxygen-rich (CZ) silicon subject to beryllium ion implantation and subsequent annealing is reported. A characteristic bound exciton luminescence spectrum is observed with a narrow zero-phonon line at 1137.98(5) meV, denoted , accompanied by a vibrational sideband extending for more than 200 meV from the zero-phonon line and containing lattice- and defect-related vibrational modes. The spectrum is not observed in oxygen-lean, float zone (FZ) silicon except where beryllium and oxygen are co-implanted. The response of the luminescence system to external perturbations such as temperature, uniaxial stress and magnetic fields are reported. The defect structure is found to have rhombic I symmetry and the absence of any splitting in a magnetic field indicates that the line is a magnetic singlet. The data are interpreted in the context of a pseudodonor model.

View the full article here:

DOI

This article has been bookmarked once, on 2008-11-10.

2008-11-10 User kamdy
Privacy Statement | Terms & Conditions
CiteULike organises scholarly (or academic) papers or literature and provides bibliographic (which means it makes bibliographies) for universities and higher education establishments. It helps undergraduates and postgraduates. People studying for PhDs or in postdoctoral (postdoc) positions. The service is similar in scope to EndNote or RefWorks or any other reference manager like BibTeX, but it is a social bookmarking service for scientists and humanities researchers.