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Group: LTM_LETI_etching - with tag icp [10 articles]

Recent papers posted by members of the LTM_LETI_etching group with tag icp
  • Inductively coupled Cl2/O2 plasma: experimental investigation and modelling
    Vacuum, Vol. 75, No. 11-12. (2004), pp. 237-246.
    by Efremov, Dong-Pyo Kim, Chang-Il Kim
    posted to cl2-o2 icp optical-emission-spectroscopy by these_morel to the group LTM_LETI_etching on 2008-01-30 13:06:03 as read
  • 30 nm Tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors
    Microelectronic Engineering, Vol. 83, No. 4-9. ( 2006), pp. 1152-1154.
    by X Li, X Cao, H Zhou, CDW Wilkinson, S Thoms, D Macintyre, M Holland, IG Thayne
    posted to c4f8 etching icp sf6 tungsten by these_morel to the group LTM_LETI_etching on 2006-07-26 12:51:56 as read along with 1 person Stanley_vrc
  • CF/sub 4/ decomposition using inductively coupled plasma: effect of power frequency
    Industry Applications, IEEE Transactions on, Vol. 41, No. 1. (2005), pp. 215-220.
    by T Kuroki, J Mine, M Okubo, T Yamamoto, N Saeki
    posted to cf4-o2 decomposition icp by these_morel to the group LTM_LETI_etching on 2006-06-19 10:21:45 as read
  • Effect of additive gases on the selective etching of tungsten films using inductively coupled halogen-based plasmas
    Thin Solid Films, Vol. 447-448 (30 January 2004), pp. 586-591.
    by SD Park, YJ Lee, NG Cho, SG Kim, HH Choe, MP Hong, GY Yeom
    posted to ar cf4-cl2 icp n2 o2 tungsten by these_morel to the group LTM_LETI_etching on 2006-03-21 14:23:28 as read along with 2 people ashrafrkhan Stanley_vrc
  • Mass spectrometry studies of resist trimming processes in HBr/O[sub 2] and Cl[sub 2]/O[sub 2] chemistries
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 1. (2005), pp. 103-112.
    by E Pargon, O Joubert, T Chevolleau, G Cunge, Songlin Xu, Thorsten Lill
    posted to cl2-o2 hbr-o2 icp mass-spectrometry resist-trimming by these_morel to the group LTM_LETI_etching on 2006-03-21 11:34:47 as read
  • Selective Etching of HfO2 High-k Gate Material over Si in C4F8/Ar/H2 Plasmas.
    (2004)
    by Kazuo Takahashi, Kouichi Ono
    posted to c4f8-ar-h2 hfo2 high-k icp by these_morel to the group LTM_LETI_etching on 2006-03-21 07:41:44 as read
  • Plasma induced 193-nm Resist Deformation: Problems and a Possible Solution.
    (2004)
    by H Stryuf, QT Le, T Dupont, W Boullart, S Vanhaelemeersch
    posted to deformation-resist hbr icp plasma by these_morel to the group LTM_LETI_etching on 2006-03-21 07:38:15 as read
  • High resolution inductively coupled plasma etching of 30 nm lines and spaces in tungsten and silicon
    Papers from the 44th international conference on electron, ion, and photon beam technology and nanofabrication, Vol. 18, No. 6. (2000), pp. 3471-3475.
    by Andrew L Goodyear, Sinclair Mackenzie, Deirdre L Olynick, Erik H Anderson
    posted to icp sf6-o2 temperature tungsten by these_morel to the group LTM_LETI_etching on 2006-02-28 15:13:45 as read
  • Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma
    Vol. 23, No. 4. (2005), pp. 964-970.
    by Wan S Hwang, Jinghao Chen, Won J Yoo, Vladimir Bliznetsov
    posted to volatility tin tan icp hfn hbr-cl2-o2 etching by these_morel to the group LTM_LETI_etching on 2006-02-17 15:42:40 as read
  • Effects of Annealing and Ar Ion Bombardment on the Removal of HfO[sub 2] Gate Dielectric
    Electrochemical and Solid-State Letters, Vol. 7, No. 3. (2004), pp. F18-F20.
    by Jinghao Chen, Won J Yoo, Daniel SH Chan, Dim L Kwong
    posted to ar hf hfo2 high-k icp plasma wet-etching by these_morel to the group LTM_LETI_etching on 2006-02-17 15:00:46 as read
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