Extended Arrays of Vertically Aligned Sub-10 nm Diameter [100] Si Nanowires by Metal-Assisted Chemical Etching Export

@article{citeulike:3126019, abstract = {PMID: 18698834 Large-area high density silicon nanowire (SiNW) arrays were fabricated by metal-assisted chemical etching of silicon, utilizing anodic aluminum oxide (AAO) as a patterning mask of a thin metallic film on a Si (100) substrate. Both the diameter of the pores in the AAO mask and the thickness of the metal film affected the diameter of SiNWs. The diameter of the SiNWs decreased with an increase of thickness of the metal film. Large-area SiNWs with average diameters of 20 nm down to 8 nm and wire densities as high as 1010 wires/cm2 were accomplished. These SiNWs were single crystalline and vertically aligned to the (100) substrate. It was revealed by transmission electron microscopy that the SiNWs were of high crystalline quality and showed a smooth surface.}, address = {Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle Germany, and Korea Research Institute of Standards and Science, Yuseong, 305-340 Daejon, Korea}, author = {Huang, Zhipeng and Zhang, Xuanxiong and Reiche, Manfred and Liu, Lifeng and Lee, Woo and Shimizu, Tomohiro and Senz, Stephan and Gösele, Ulrich}, citeulike-article-id = {3126019}, citeulike-linkout-0 = {http://dx.doi.org/10.1021/nl802324y}, citeulike-linkout-1 = {http://pubs.acs.org/doi/abs/10.1021/nl802324y}, citeulike-linkout-2 = {http://pubs.acs.org/doi/pdfplus/10.1021/nl802324y}, day = {10}, doi = {10.1021/nl802324y}, journal = {Nano Letters}, keywords = {chemical, etching, metal, wet}, month = {September}, number = {9}, pages = {3046--3051}, posted-at = {2009-09-24 21:27:49}, priority = {2}, title = {Extended Arrays of Vertically Aligned Sub-10 nm Diameter [100] Si Nanowires by Metal-Assisted Chemical Etching}, url = {http://dx.doi.org/10.1021/nl802324y}, volume = {8}, year = {2008} }

TY - JOUR ID - citeulike:3126019 L3 - citeulike-article-id:3126019 N2 - PMID: 18698834 Large-area high density silicon nanowire (SiNW) arrays were fabricated by metal-assisted chemical etching of silicon, utilizing anodic aluminum oxide (AAO) as a patterning mask of a thin metallic film on a Si (100) substrate. Both the diameter of the pores in the AAO mask and the thickness of the metal film affected the diameter of SiNWs. The diameter of the SiNWs decreased with an increase of thickness of the metal film. Large-area SiNWs with average diameters of 20 nm down to 8 nm and wire densities as high as 1010 wires/cm2 were accomplished. These SiNWs were single crystalline and vertically aligned to the (100) substrate. It was revealed by transmission electron microscopy that the SiNWs were of high crystalline quality and showed a smooth surface. IS - 9 JF - Nano Letters AD - Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle Germany, and Korea Research Institute of Standards and Science, Yuseong, 305-340 Daejon, Korea EP - 3051 TI - Extended Arrays of Vertically Aligned Sub-10 nm Diameter [100] Si Nanowires by Metal-Assisted Chemical Etching VL - 8 SP - 3046 KW - chemical KW - etching KW - metal KW - wet AU - Huang, Zhipeng AU - Zhang, Xuanxiong AU - Reiche, Manfred AU - Liu, Lifeng AU - Lee, Woo AU - Shimizu, Tomohiro AU - Senz, Stephan AU - Gösele, Ulrich PY - 2008/09/10/ UR - http://dx.doi.org/10.1021/nl802324y ER -