Sun, 27 Jul 2008 07:48:42 BST CiteULike: dcastro's library [2022 articles] http://www.citeulike.org/user/dcastro/article/2776272 CiteULike.org en-gb Copyright © 2004-2008 citeulike.org http://www.citeulike.org/user/dcastro/article/2776272 <i>Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International (1997), pp. 301-304.</i><br /><br />The rapid growth of wireless systems at radio frequencies (RF) is driving the need for improved analog circuit and device analysis at gigaHertz frequencies. This includes: low noise front ends, linear amplifiers, mixers, and power amplifiers. Moreover, the parasitic effects of capacitance and inductance, both on- and off-chip, require careful extraction and characterization in support of predictive modeling. While time-domain techniques work well for digital systems, often the spectral and dynamic range requirements for communications systems necessitate accurate analysis of harmonic content with frequency differences of a thousandfold or more. This paper demonstrates the applicability and unique strengths of device-level harmonic balance (HB) in the simulation and physical modeling of RF circuits Device simulation for RF applications RW Dutton B Troyanovsky Z Yu T Arnborg F Rotella G Ma J Sato-Iwanaga doi:10.1109/IEDM.1997.650386 Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International (1997), pp. 301-304. 2008-05-09T16:40:13-00:00 1997 Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International 301 304 rf simulation