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<pubDate>Sat, 26 Jul 2008 06:06:53 BST</pubDate>


	<title>CiteULike: dcastro's capacitor</title>
	<description>CiteULike: dcastro's capacitor</description>


	<link>http://www.citeulike.org/user/dcastro/tag/capacitor</link>
	<dc:publisher>CiteULike.org</dc:publisher>
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	<dc:rights>Copyright &#169; 2004-2008 citeulike.org</dc:rights>
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        <rdf:li rdf:resource="http://www.citeulike.org/user/dcastro/article/2678815"/>
        <rdf:li rdf:resource="http://www.citeulike.org/user/dcastro/article/2678814"/>
        <rdf:li rdf:resource="http://www.citeulike.org/user/dcastro/article/2648154"/>
        <rdf:li rdf:resource="http://www.citeulike.org/user/dcastro/article/2640648"/>
        <rdf:li rdf:resource="http://www.citeulike.org/user/dcastro/article/2640602"/>
        <rdf:li rdf:resource="http://www.citeulike.org/user/dcastro/article/2060699"/>
        <rdf:li rdf:resource="http://www.citeulike.org/user/dcastro/article/2060687"/>
        <rdf:li rdf:resource="http://www.citeulike.org/user/dcastro/article/2060685"/>
        <rdf:li rdf:resource="http://www.citeulike.org/user/dcastro/article/2060669"/>
        <rdf:li rdf:resource="http://www.citeulike.org/user/dcastro/article/2060666"/>
        <rdf:li rdf:resource="http://www.citeulike.org/user/dcastro/article/2060611"/>
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        <rdf:li rdf:resource="http://www.citeulike.org/user/dcastro/article/1988199"/>
        <rdf:li rdf:resource="http://www.citeulike.org/user/dcastro/article/1988196"/>
        <rdf:li rdf:resource="http://www.citeulike.org/user/dcastro/article/1988192"/>
        <rdf:li rdf:resource="http://www.citeulike.org/user/dcastro/article/1915048"/>
        <rdf:li rdf:resource="http://www.citeulike.org/user/dcastro/article/1880288"/>
        <rdf:li rdf:resource="http://www.citeulike.org/user/dcastro/article/1880287"/>

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<item rdf:about="http://www.citeulike.org/user/dcastro/article/2836660">
    <title>Rectangular and Circular Microstrip Disk Capacitors and Resonators</title>
    <link>http://www.citeulike.org/user/dcastro/article/2836660</link>
    <description>&lt;i&gt;Microwave Theory and Techniques, IEEE Transactions on, Vol. 22, No. 10. (1974), pp. 857-864.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;A simple method is described to calculate the capacitances of rectangular and circular microstrip disk capacitors. From the edge capacitances of the capacitors the influence of the fringing field on the resonance frequencies of microstrip disk resonators is calculated. A theory to compute the resonance frequencies of microstrip resonators with high accuracy is presented. The resonance frequencies are calculated from a resonator model employing an effective width and length or radius, respectively, filled with a medium of a &#34;dynamic dielectric constant.&#34; Theoretical and experimental results are compared and found to be in agreement within 1 percent.</description>
    <dc:title>Rectangular and Circular Microstrip Disk Capacitors and Resonators</dc:title>

    <dc:creator>I Wolff</dc:creator>
    <dc:creator>N Knoppik</dc:creator>
    <dc:source>Microwave Theory and Techniques, IEEE Transactions on, Vol. 22, No. 10. (1974), pp. 857-864.</dc:source>
    <dc:date>2008-05-27T07:08:23-00:00</dc:date>
    <prism:publicationYear>1974</prism:publicationYear>
    <prism:publicationName>Microwave Theory and Techniques, IEEE Transactions on</prism:publicationName>
    <prism:volume>22</prism:volume>
    <prism:number>10</prism:number>
    <prism:startingPage>857</prism:startingPage>
    <prism:endingPage>864</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>microstrip</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/2808883">
    <title>WBIDC: Nuevo condensador interdigital de banda ancha</title>
    <link>http://www.citeulike.org/user/dcastro/article/2808883</link>
    <description>&lt;i&gt;URSI (2005)&lt;/i&gt;</description>
    <dc:title>WBIDC: Nuevo condensador interdigital de banda ancha</dc:title>

    <dc:creator>Francisco</dc:creator>
    <dc:creator>Pablo Roth</dc:creator>
    <dc:creator>Enrique Segura</dc:creator>
    <dc:creator>Carlos Peñalosa</dc:creator>
    <dc:source>URSI (2005)</dc:source>
    <dc:date>2008-05-18T11:59:41-00:00</dc:date>
    <prism:publicationYear>2005</prism:publicationYear>
    <prism:publicationName>URSI</prism:publicationName>
    <prism:category>capacitor</prism:category>
    <prism:category>crlh</prism:category>
    <prism:category>wideband</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/2678815">
    <title>Adjustable Bandwidth Filter Design Based on Interdigital Capacitors</title>
    <link>http://www.citeulike.org/user/dcastro/article/2678815</link>
    <description>&lt;i&gt;Microwave and Wireless Components Letters, IEEE, Vol. 18, No. 1. (2008), pp. 16-18.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;In this letter, we explore a general-purpose microstrip coupling model for computer aided design of new bandpass filters. The J-inverter topology of the model facilitates the study of coupling behaviours of different microstrip structures leading to a quick comparison of their coupling strengths. Based on such comparison, microstrip filters with interdigital capacitors and etched slots yielding relatively higher coupling coefficients are designed, fabricated and tested. The filters exhibit relatively wider bandwidths which are easily adjustable by way of changing the geometrical parameters of interdigital capacitors and slots.</description>
    <dc:title>Adjustable Bandwidth Filter Design Based on Interdigital Capacitors</dc:title>

    <dc:creator>Li Zhu</dc:creator>
    <dc:creator>V Devabhaktuni</dc:creator>
    <dc:creator>Chunyan Wang</dc:creator>
    <dc:creator>Ming Yu</dc:creator>
    <dc:identifier>doi:10.1109/LMWC.2007.911975</dc:identifier>
    <dc:source>Microwave and Wireless Components Letters, IEEE, Vol. 18, No. 1. (2008), pp. 16-18.</dc:source>
    <dc:date>2008-04-16T19:38:04-00:00</dc:date>
    <prism:publicationYear>2008</prism:publicationYear>
    <prism:publicationName>Microwave and Wireless Components Letters, IEEE</prism:publicationName>
    <prism:volume>18</prism:volume>
    <prism:number>1</prism:number>
    <prism:startingPage>16</prism:startingPage>
    <prism:endingPage>18</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>filter</prism:category>
    <prism:category>interdigital</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/2678814">
    <title>Modeling and design of interdigital structure</title>
    <link>http://www.citeulike.org/user/dcastro/article/2678814</link>
    <description>&lt;i&gt;Electron Devices, IEEE Transactions on, Vol. 38, No. 11. (1991), pp. 2575-2577.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;A computer-aided-design-compatible model is described for an interdigital structure in microstrip configuration. The interdigital structure is modeled by using the admittance matrix of the coupled microstrip lines and modified to include the discontinuities and the distributed elements. The model takes into account all the distributed effects of the structure and models them as circuit elements. The equivalent circuit elements of the interdigital structure are computed in closed-form expressions. The results are compared with other models and also with the experimental results. Even though the model does not consider the phase shift along the terminal strip, it is shown to be valid well into the gigahertz range</description>
    <dc:title>Modeling and design of interdigital structure</dc:title>

    <dc:creator>RT Kollipara</dc:creator>
    <dc:creator>AS Mohammed</dc:creator>
    <dc:creator>TK Plant</dc:creator>
    <dc:creator>VK Tripathi</dc:creator>
    <dc:identifier>doi:10.1109/16.97430</dc:identifier>
    <dc:source>Electron Devices, IEEE Transactions on, Vol. 38, No. 11. (1991), pp. 2575-2577.</dc:source>
    <dc:date>2008-04-16T19:37:43-00:00</dc:date>
    <prism:publicationYear>1991</prism:publicationYear>
    <prism:publicationName>Electron Devices, IEEE Transactions on</prism:publicationName>
    <prism:volume>38</prism:volume>
    <prism:number>11</prism:number>
    <prism:startingPage>2575</prism:startingPage>
    <prism:endingPage>2577</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>interdigital</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/2648154">
    <title>Equivalent capacitances of coplanar waveguide discontinuities and interdigitated capacitors using a three-dimensional finite difference method</title>
    <link>http://www.citeulike.org/user/dcastro/article/2648154</link>
    <description>&lt;i&gt;Microwave Theory and Techniques, IEEE Transactions on, Vol. 38, No. 12. (1990), pp. 1808-1815.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;Equivalent capacitances of coplanar waveguide discontinuities on multilayered substrates are calculated using a three-dimensional finite-different method. The application of the method is demonstrated for open ends and gaps in microstrip and coplanar waveguides, as well as for more complicated structures such as interdigitated capacitors. The main advantage of the method is its flexibility in treating multilayered substrates and different conductor configurations. It can therefore be applied to more complicated structures such as interdigitated capacitors, air bridges, and waveguide transitions. The effect of conductor metallization thickness and shielding walls is also taken into account. Good agreement between the calculated data and measurements up to 25 GHz in the case of coplanar structures indicates the validity of the static analysis even for high frequencies</description>
    <dc:title>Equivalent capacitances of coplanar waveguide discontinuities and interdigitated capacitors using a three-dimensional finite difference method</dc:title>

    <dc:creator>M Naghed</dc:creator>
    <dc:creator>I Wolff</dc:creator>
    <dc:identifier>doi:10.1109/22.64560</dc:identifier>
    <dc:source>Microwave Theory and Techniques, IEEE Transactions on, Vol. 38, No. 12. (1990), pp. 1808-1815.</dc:source>
    <dc:date>2008-04-10T06:44:30-00:00</dc:date>
    <prism:publicationYear>1990</prism:publicationYear>
    <prism:publicationName>Microwave Theory and Techniques, IEEE Transactions on</prism:publicationName>
    <prism:volume>38</prism:volume>
    <prism:number>12</prism:number>
    <prism:startingPage>1808</prism:startingPage>
    <prism:endingPage>1815</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>coplanar</prism:category>
    <prism:category>interdigital</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/2640648">
    <title>Power decoupling with integral capacitors and area array connections</title>
    <link>http://www.citeulike.org/user/dcastro/article/2640648</link>
    <description>&lt;i&gt;Electrical Performance of Electronic Packaging, 1998. IEEE 7th topical Meeting on (1998), pp. 209-212.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;Power and ground decoupling is typically accomplished using a hierarchy of discrete capacitors in the power distribution network. As operating frequencies increase, the use of decoupling capacitors integrated in the substrate becomes more pressing. We present a partial element equivalent circuit (PEEC) based modeling approach especially suited for such integrated capacitors, together with TDR and high-frequency S-parameter measurement, and model validation via use of specially fabricated test structures</description>
    <dc:title>Power decoupling with integral capacitors and area array connections</dc:title>

    <dc:creator>E Diaz-Alvarez</dc:creator>
    <dc:creator>JP Krusius</dc:creator>
    <dc:creator>F Kroeger</dc:creator>
    <dc:identifier>doi:10.1109/EPEP.1998.733981</dc:identifier>
    <dc:source>Electrical Performance of Electronic Packaging, 1998. IEEE 7th topical Meeting on (1998), pp. 209-212.</dc:source>
    <dc:date>2008-04-08T06:59:17-00:00</dc:date>
    <prism:publicationYear>1998</prism:publicationYear>
    <prism:publicationName>Electrical Performance of Electronic Packaging, 1998. IEEE 7th topical Meeting on</prism:publicationName>
    <prism:startingPage>209</prism:startingPage>
    <prism:endingPage>212</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>integrated</prism:category>
    <prism:category>tesis</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/2640602">
    <title>Modeling and simulation of integrated capacitors for high frequency chip power decoupling</title>
    <link>http://www.citeulike.org/user/dcastro/article/2640602</link>
    <description>&lt;i&gt;Components and Packaging Technologies, IEEE Transactions on [see also Components, Packaging and Manufacturing Technology, Part A: Packaging Technologies, IEEE Transactions on], Vol. 23, No. 4. (2000), pp. 611-619.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;Power and ground decoupling is typically accomplished using a hierarchy of discrete capacitors spread throughout the power distribution network. Many of the limitations of discrete decoupling capacitors can be overcome with integrated capacitors. A modeling approach for integrated capacitors based on the partial-element-equivalent-circuit (PEEC) formulation is presented. This approach has been applied to 3M C-ply, a flexible planar integrated capacitor technology that can be laminated into multilayer substrates, such as printed wiring boards. The decoupling capability of 3M C-Ply technology for chip power distribution has been compared with conventional surface-mount technology (SMT)</description>
    <dc:title>Modeling and simulation of integrated capacitors for high frequency chip power decoupling</dc:title>

    <dc:creator>E Diaz-Alvarez</dc:creator>
    <dc:creator>JP Krusius</dc:creator>
    <dc:creator>F Kroeger</dc:creator>
    <dc:identifier>doi:10.1109/6144.888843</dc:identifier>
    <dc:source>Components and Packaging Technologies, IEEE Transactions on [see also Components, Packaging and Manufacturing Technology, Part A: Packaging Technologies, IEEE Transactions on], Vol. 23, No. 4. (2000), pp. 611-619.</dc:source>
    <dc:date>2008-04-08T06:46:46-00:00</dc:date>
    <prism:publicationYear>2000</prism:publicationYear>
    <prism:publicationName>Components and Packaging Technologies, IEEE Transactions on [see also Components, Packaging and Manufacturing Technology, Part A: Packaging Technologies, IEEE Transactions on]</prism:publicationName>
    <prism:volume>23</prism:volume>
    <prism:number>4</prism:number>
    <prism:startingPage>611</prism:startingPage>
    <prism:endingPage>619</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>integrated</prism:category>
    <prism:category>microstrip</prism:category>
    <prism:category>model</prism:category>
    <prism:category>planar</prism:category>
    <prism:category>tesis</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/2060699">
    <title>Challenges in RF analog integrated circuits</title>
    <link>http://www.citeulike.org/user/dcastro/article/2060699</link>
    <description>&lt;i&gt;ASIC, 2001. Proceedings. 4th International Conference on (2001), pp. 800-805.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;The recent aggressive downsizing of CMOS devices makes it potential to implement RF front-end in the CMOS process, but RF circuits have some special demands which the standard digital CMOS process does not consider: low noise, high linearity, high quality passive components. These demands present the main barriers to implement the RF front-end in CMOS process and need special efforts to get good performance. This paper discusses some relevant issues to the implementations of RF front-end in CMOS process</description>
    <dc:title>Challenges in RF analog integrated circuits</dc:title>

    <dc:creator>Shi Bingxue</dc:creator>
    <dc:source>ASIC, 2001. Proceedings. 4th International Conference on (2001), pp. 800-805.</dc:source>
    <dc:date>2007-12-05T12:10:34-00:00</dc:date>
    <prism:publicationYear>2001</prism:publicationYear>
    <prism:publicationName>ASIC, 2001. Proceedings. 4th International Conference on</prism:publicationName>
    <prism:startingPage>800</prism:startingPage>
    <prism:endingPage>805</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>circuits</prism:category>
    <prism:category>component</prism:category>
    <prism:category>inductor</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/2060687">
    <title>Bending-comb capacitor with a small parasitic inductance</title>
    <link>http://www.citeulike.org/user/dcastro/article/2060687</link>
    <description>&lt;i&gt;VLSI Circuits Digest of Technical Papers, 2002. Symposium on (2002), pp. 22-25.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;A new metal-metal capacitor with a small parasitic inductance, named a bending-comb capacitor (BCC), is proposed based on a standard digital CMOS technology. The BCC is applicable to high frequency circuits due to its high self-resonance frequency. An analytical evaluation of the capacitance from the geometry size is also presented. The self-resonance frequency of the BCC of 0.85 pF with the size of 10 /spl mu/m /spl times/ 100 /spl mu/m is estimated as 374 GHz with a 0.13-/spl mu/m Cu-wiring CMOS process. This frequency is about six times higher than that estimated by the conventional comb capacitor.</description>
    <dc:title>Bending-comb capacitor with a small parasitic inductance</dc:title>

    <dc:creator>A Imamura</dc:creator>
    <dc:creator>M Fujishima</dc:creator>
    <dc:creator>K Hoh</dc:creator>
    <dc:source>VLSI Circuits Digest of Technical Papers, 2002. Symposium on (2002), pp. 22-25.</dc:source>
    <dc:date>2007-12-05T12:06:13-00:00</dc:date>
    <prism:publicationYear>2002</prism:publicationYear>
    <prism:publicationName>VLSI Circuits Digest of Technical Papers, 2002. Symposium on</prism:publicationName>
    <prism:startingPage>22</prism:startingPage>
    <prism:endingPage>25</prism:endingPage>
    <prism:category>capacitor</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/2060685">
    <title>Capacity limits and matching properties of integrated capacitors</title>
    <link>http://www.citeulike.org/user/dcastro/article/2060685</link>
    <description>&lt;i&gt;Solid-State Circuits, IEEE Journal of, Vol. 37, No. 3. (2002), pp. 384-393.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;Theoretical limits for the capacitance density of integrated capacitors with combined lateral and vertical field components are derived. These limits are used to investigate the efficiency of various capacitive structures such as lateral flux and quasifractal capacitors. This study leads to two new capacitor structures with high lateral-field efficiencies. These new capacitors demonstrate larger capacities, superior matching properties, tighter tolerances, and higher self-resonance frequencies than the standard horizontal parallel plate and previously reported lateral-field capacitors, while maintaining comparable quality factors. These superior qualities are verified by simulation and experimental results</description>
    <dc:title>Capacity limits and matching properties of integrated capacitors</dc:title>

    <dc:creator>R Aparicio</dc:creator>
    <dc:creator>A Hajimiri</dc:creator>
    <dc:source>Solid-State Circuits, IEEE Journal of, Vol. 37, No. 3. (2002), pp. 384-393.</dc:source>
    <dc:date>2007-12-05T12:05:36-00:00</dc:date>
    <prism:publicationYear>2002</prism:publicationYear>
    <prism:publicationName>Solid-State Circuits, IEEE Journal of</prism:publicationName>
    <prism:volume>37</prism:volume>
    <prism:number>3</prism:number>
    <prism:startingPage>384</prism:startingPage>
    <prism:endingPage>393</prism:endingPage>
    <prism:category>capacitor</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/2060669">
    <title>Investigation of space filling capacitors</title>
    <link>http://www.citeulike.org/user/dcastro/article/2060669</link>
    <description>&lt;i&gt;Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference on (2003), pp. 287-290.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;This paper investigates the usage of the family of space filling curves in capacitor design. Some of the known family members are studied regarding their applications as area efficient capacitor elements. One of the main advantages of these structures is that they divide the space into two continuous electrodes. This makes extra connecting vias and metal layers unnecessary, and enables implementation on a single metal layer. The capacitance of the suggested structures are obtained and compared with some of the reference structures such as the interdigitated and woven capacitors.</description>
    <dc:title>Investigation of space filling capacitors</dc:title>

    <dc:creator>T Moselhy</dc:creator>
    <dc:creator>H Ghali</dc:creator>
    <dc:creator>HF Ragaie</dc:creator>
    <dc:creator>H Haddara</dc:creator>
    <dc:source>Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference on (2003), pp. 287-290.</dc:source>
    <dc:date>2007-12-05T11:56:53-00:00</dc:date>
    <prism:publicationYear>2003</prism:publicationYear>
    <prism:publicationName>Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference on</prism:publicationName>
    <prism:startingPage>287</prism:startingPage>
    <prism:endingPage>290</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>fractal</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/2060666">
    <title>Fractal capacitors</title>
    <link>http://www.citeulike.org/user/dcastro/article/2060666</link>
    <description>&lt;i&gt;Solid-State Circuits, IEEE Journal of, Vol. 33, No. 12. (1998), pp. 2035-2041.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;A linear capacitor structure using fractal geometries is described. This capacitor exploits both lateral and vertical electric fields to increase the capacitance per unit area. Compared to standard parallel-plate capacitors, the parasitic bottom-plate capacitance is reduced. Unlike conventional metal-to-metal capacitors, the capacitance density increases with technology scaling. A classic fractal structure is implemented with 0.6-&#956;m metal spacing, and a factor of 2.3 increase in the capacitance per unit area is observed. It is shown that capacitance boost factors in excess of ten may be possible as technology continues to scale. A computer-aided-design tool to automatically generate and analyze custom fractal layouts has been developed</description>
    <dc:title>Fractal capacitors</dc:title>

    <dc:creator>H Samavati</dc:creator>
    <dc:creator>A Hajimiri</dc:creator>
    <dc:creator>AR Shahani</dc:creator>
    <dc:creator>GN Nasserbakht</dc:creator>
    <dc:creator>TH Lee</dc:creator>
    <dc:source>Solid-State Circuits, IEEE Journal of, Vol. 33, No. 12. (1998), pp. 2035-2041.</dc:source>
    <dc:date>2007-12-05T11:56:24-00:00</dc:date>
    <prism:publicationYear>1998</prism:publicationYear>
    <prism:publicationName>Solid-State Circuits, IEEE Journal of</prism:publicationName>
    <prism:volume>33</prism:volume>
    <prism:number>12</prism:number>
    <prism:startingPage>2035</prism:startingPage>
    <prism:endingPage>2041</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>fractal</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/2060611">
    <title>Fractal Capacitors</title>
    <link>http://www.citeulike.org/user/dcastro/article/2060611</link>
    <description>&lt;i&gt;(1998)&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;A linear capacitor structure using fractal geometries is described. This capacitor exploits both lateral and vertical electric fields to increase the capacitance per unit area. Compared to standard parallel-plate capacitors, the parasitic bottomplate capacitance is reduced. Unlike conventional metal-to-metal capacitors, the capacitance density increases with technology scaling. A classic fractal structure is implemented with 0.6-m metal spacing, and a factor of 2.3 increase in the capacitance...</description>
    <dc:title>Fractal Capacitors</dc:title>

    <dc:creator>H Samavati</dc:creator>
    <dc:creator>A Hajimiri</dc:creator>
    <dc:creator>A Shahani</dc:creator>
    <dc:creator>G Nasserbakht</dc:creator>
    <dc:creator>T Lee</dc:creator>
    <dc:source>(1998)</dc:source>
    <dc:date>2007-12-05T11:31:07-00:00</dc:date>
    <prism:publicationYear>1998</prism:publicationYear>
    <prism:category>capacitor</prism:category>
    <prism:category>fractal</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/1992111">
    <title>A general-purpose circuit model of interdigital capacitor for accurate design of low-loss microstrip circuit</title>
    <link>http://www.citeulike.org/user/dcastro/article/1992111</link>
    <description>&lt;i&gt;Microwave Symposium Digest, 1998 IEEE MTT-S International, Vol. 3 (1998), pp. 1755-1758 vol.3.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;A general-purpose CAD-oriented circuit model is presented for accurately modeling interdigital capacitor (IDC) in optimized design of low-loss IDC-related microstrip circuits. This equivalent model is formulated as an admittance-based &#960;-network through the use of a so-called &#8220;Short-Open Calibration (SOC)&#8221; technique for extracting precisely circuit parameters from a fullwave method of moments (MoM). A J-inverter based topology is further developed for explicit characterization of IDC-related coupling characteristics that accounts for frequency dispersion and fringing effect. Extracted model parameters are given for two types of IDC structure and the model accuracy is well validated by our experiments for an IDC-related quasi-lumped bandpass filter</description>
    <dc:title>A general-purpose circuit model of interdigital capacitor for accurate design of low-loss microstrip circuit</dc:title>

    <dc:creator>Lei Zhu</dc:creator>
    <dc:creator>Ke Wu</dc:creator>
    <dc:identifier>doi:10.1109/MWSYM.1998.700809</dc:identifier>
    <dc:source>Microwave Symposium Digest, 1998 IEEE MTT-S International, Vol. 3 (1998), pp. 1755-1758 vol.3.</dc:source>
    <dc:date>2007-11-27T10:24:18-00:00</dc:date>
    <prism:publicationYear>1998</prism:publicationYear>
    <prism:publicationName>Microwave Symposium Digest, 1998 IEEE MTT-S International</prism:publicationName>
    <prism:volume>3</prism:volume>
    <prism:startingPage>1755</prism:startingPage>
    <prism:endingPage>1758 vol.3</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>circuit</prism:category>
    <prism:category>interdigital</prism:category>
    <prism:category>microstrip</prism:category>
    <prism:category>model</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/1992100">
    <title>Corrections to &#34;accurate circuit model of interdigital capacitor and its application to design of new quasi-lumped miniaturized filters with suppression of harmonic resonance&#34;</title>
    <link>http://www.citeulike.org/user/dcastro/article/1992100</link>
    <description>&lt;i&gt;Microwave Theory and Techniques, IEEE Transactions on, Vol. 50, No. 10. (2002), pp. 2412-2413.&lt;/i&gt;</description>
    <dc:title>Corrections to &#34;accurate circuit model of interdigital capacitor and its application to design of new quasi-lumped miniaturized filters with suppression of harmonic resonance&#34;</dc:title>

    <dc:creator>Lei Zhu</dc:creator>
    <dc:creator>Ke Wu</dc:creator>
    <dc:identifier>doi:10.1109/TMTT.2002.803452</dc:identifier>
    <dc:source>Microwave Theory and Techniques, IEEE Transactions on, Vol. 50, No. 10. (2002), pp. 2412-2413.</dc:source>
    <dc:date>2007-11-27T10:23:01-00:00</dc:date>
    <prism:publicationYear>2002</prism:publicationYear>
    <prism:publicationName>Microwave Theory and Techniques, IEEE Transactions on</prism:publicationName>
    <prism:volume>50</prism:volume>
    <prism:number>10</prism:number>
    <prism:startingPage>2412</prism:startingPage>
    <prism:endingPage>2413</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>circuits</prism:category>
    <prism:category>filter</prism:category>
    <prism:category>interdigital</prism:category>
    <prism:category>lumped</prism:category>
    <prism:category>model</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/1992095">
    <title>CAD models of lumped elements on GaAs up to 18 GHz</title>
    <link>http://www.citeulike.org/user/dcastro/article/1992095</link>
    <description>&lt;i&gt;Microwave Theory and Techniques, IEEE Transactions on, Vol. 36, No. 2. (1988), pp. 294-304.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;Lumped elements are considered as very attractive structures for the realisation of MMICs with respect to considerable size-reduction. Improved models for integrable lumped-element straight-line, single-loop, and spiral inductors, as well as for interdigitated and MIM capacitors, have been derived using numerical solutions of the inductance integral, basic microstrip theory, and network analysis. The broad experimental verification shows good agreement between models and experiments, with deviations of 5-10% up to 18 GHz. Besides the practical values and frequency range, losses of the lumped elements are presented</description>
    <dc:title>CAD models of lumped elements on GaAs up to 18 GHz</dc:title>

    <dc:creator>E Pettenpaul</dc:creator>
    <dc:creator>H Kapusta</dc:creator>
    <dc:creator>A Weisgerber</dc:creator>
    <dc:creator>H Mampe</dc:creator>
    <dc:creator>J Luginsland</dc:creator>
    <dc:creator>I Wolff</dc:creator>
    <dc:source>Microwave Theory and Techniques, IEEE Transactions on, Vol. 36, No. 2. (1988), pp. 294-304.</dc:source>
    <dc:date>2007-11-27T10:22:35-00:00</dc:date>
    <prism:publicationYear>1988</prism:publicationYear>
    <prism:publicationName>Microwave Theory and Techniques, IEEE Transactions on</prism:publicationName>
    <prism:volume>36</prism:volume>
    <prism:number>2</prism:number>
    <prism:startingPage>294</prism:startingPage>
    <prism:endingPage>304</prism:endingPage>
    <prism:category>cad</prism:category>
    <prism:category>capacitor</prism:category>
    <prism:category>inductor</prism:category>
    <prism:category>lumped</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/1992079">
    <title>DGS resonator with interdigital capacitor and application to bandpass filter design</title>
    <link>http://www.citeulike.org/user/dcastro/article/1992079</link>
    <description>&lt;i&gt;Electronics Letters, Vol. 40, No. 7. (2004), pp. 433-434.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;A novel defected ground structure (DGS) microstrip resonator is proposed. The proposed DGS resonator has the resonant and anti-resonant characteristic that is very similar to those of a surface acoustic wave resonator or a film bulk acoustic resonator (FBAR). To confirm the validity of the proposed resonator, bandpass filters were designed and implemented using series and parallel resonators.</description>
    <dc:title>DGS resonator with interdigital capacitor and application to bandpass filter design</dc:title>

    <dc:creator>JS Park</dc:creator>
    <dc:creator>JS Yun</dc:creator>
    <dc:creator>CS Park</dc:creator>
    <dc:source>Electronics Letters, Vol. 40, No. 7. (2004), pp. 433-434.</dc:source>
    <dc:date>2007-11-27T10:19:53-00:00</dc:date>
    <prism:publicationYear>2004</prism:publicationYear>
    <prism:publicationName>Electronics Letters</prism:publicationName>
    <prism:volume>40</prism:volume>
    <prism:number>7</prism:number>
    <prism:startingPage>433</prism:startingPage>
    <prism:endingPage>434</prism:endingPage>
    <prism:category>bandpass</prism:category>
    <prism:category>capacitor</prism:category>
    <prism:category>filter</prism:category>
    <prism:category>interdigital</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/1988303">
    <title>Interdigital Capacitors for Use in Lumped-Element Microwave Integrated Circuits</title>
    <link>http://www.citeulike.org/user/dcastro/article/1988303</link>
    <description>&lt;i&gt;Microwave Symposium Digest, G-MTT International, Vol. 70, No. 1. (1970), pp. 7-13.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;An analysis of the frequency response of interdigital capacitors is given along with an equation for their design. The capacitor Q is given in terms of its geometry which consists of a planar interdigital conductor deposited on the surface of a substrate. Capacitance values ranging from 0.1 to 10 pF at L band with measured Q's in excess of 400 are realizable.</description>
    <dc:title>Interdigital Capacitors for Use in Lumped-Element Microwave Integrated Circuits</dc:title>

    <dc:creator>GD Alley</dc:creator>
    <dc:source>Microwave Symposium Digest, G-MTT International, Vol. 70, No. 1. (1970), pp. 7-13.</dc:source>
    <dc:date>2007-11-26T20:29:15-00:00</dc:date>
    <prism:publicationYear>1970</prism:publicationYear>
    <prism:publicationName>Microwave Symposium Digest, G-MTT International</prism:publicationName>
    <prism:volume>70</prism:volume>
    <prism:number>1</prism:number>
    <prism:startingPage>7</prism:startingPage>
    <prism:endingPage>13</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>interdigital</prism:category>
    <prism:category>lumped</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/1988289">
    <title>Wire bonded interdigital capacitor</title>
    <link>http://www.citeulike.org/user/dcastro/article/1988289</link>
    <description>&lt;i&gt;Microwave and Wireless Components Letters, IEEE, Vol. 15, No. 10. (2005), pp. 700-702.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;Interdigital capacitors (IDCs) are convenient capacitance devices in microstrip circuits, even if only low capacitance values can be achieved. Nevertheless, undesired resonances degrade their performance when frequency increases. Short circuits across the end of alternate fingers of the IDC improve its high frequency response by eliminating that drawback. Simulated and measured results are presented.</description>
    <dc:title>Wire bonded interdigital capacitor</dc:title>

    <dc:creator>FP Casares-Miranda</dc:creator>
    <dc:creator>P Otero</dc:creator>
    <dc:creator>E Marquez-Segura</dc:creator>
    <dc:creator>C Camacho-Penalosa</dc:creator>
    <dc:source>Microwave and Wireless Components Letters, IEEE, Vol. 15, No. 10. (2005), pp. 700-702.</dc:source>
    <dc:date>2007-11-26T20:27:05-00:00</dc:date>
    <prism:publicationYear>2005</prism:publicationYear>
    <prism:publicationName>Microwave and Wireless Components Letters, IEEE</prism:publicationName>
    <prism:volume>15</prism:volume>
    <prism:number>10</prism:number>
    <prism:startingPage>700</prism:startingPage>
    <prism:endingPage>702</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>interdigital</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/1988226">
    <title>CAD models for multilayered substrate interdigital capacitors</title>
    <link>http://www.citeulike.org/user/dcastro/article/1988226</link>
    <description>&lt;i&gt;Microwave Theory and Techniques, IEEE Transactions on, Vol. 44, No. 6. (1996), pp. 896-904.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;Conformal mapping-based models are given for interdigital capacitors on substrates with a thin superstrate and/or covering dielectric film. The models are useful for a wide range of dielectric constants and layer thicknesses. Capacitors with finger numbers n&#38;ges;2 are discussed. The finger widths and spacing between them may be different. The results are compared with the available data and some examples are given to demonstrate the potential of the models</description>
    <dc:title>CAD models for multilayered substrate interdigital capacitors</dc:title>

    <dc:creator>SS Gevorgian</dc:creator>
    <dc:creator>T Martinsson</dc:creator>
    <dc:creator>PLJ Linner</dc:creator>
    <dc:creator>EL Kollberg</dc:creator>
    <dc:source>Microwave Theory and Techniques, IEEE Transactions on, Vol. 44, No. 6. (1996), pp. 896-904.</dc:source>
    <dc:date>2007-11-26T20:11:54-00:00</dc:date>
    <prism:publicationYear>1996</prism:publicationYear>
    <prism:publicationName>Microwave Theory and Techniques, IEEE Transactions on</prism:publicationName>
    <prism:volume>44</prism:volume>
    <prism:number>6</prism:number>
    <prism:startingPage>896</prism:startingPage>
    <prism:endingPage>904</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>interdigital</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/1988199">
    <title>Accurate circuit model of interdigital capacitor and its application to design of new quasi-lumped miniaturized filters with suppression of harmonic resonance</title>
    <link>http://www.citeulike.org/user/dcastro/article/1988199</link>
    <description>&lt;i&gt;Microwave Theory and Techniques, IEEE Transactions on, Vol. 48, No. 3. (2000), pp. 347-356.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;A general-purpose circuit model of a microstrip interdigital capacitor (IDC) is presented in this paper for use in the design of new quasi-lumped miniaturized filters. This computer-aided-design-oriented model is developed as a versatile admittance &#960;-network with the short-open calibration technique that we have recently proposed for accurate parameter extraction of a circuit from its physical layout. This technique is self-contained in our method of moments, which accounts for frequency dispersion and fringing effects. A J-inverter topology is further conceived to explicitly formulate the coupling behavior of three types of IDC's. This model provides a unique way for the IDC-related circuit synthesis and optimization based on the accurate equivalent-circuit network extracted from the field theory algorithm. It is validated theoretically and experimentally through an example of a line resonator connected with two IDC's. The proposed scheme is used in the design and optimization of new low-loss miniaturized quasilumped integrated circuits, namely, two types of three-pole direct-coupled bandpass filters. Our measured and predicted results show interesting features of the proposed filter structure such as size reduction and suppression of harmonic resonance if the line resonator is attached by series-connected equivalent inductance</description>
    <dc:title>Accurate circuit model of interdigital capacitor and its application to design of new quasi-lumped miniaturized filters with suppression of harmonic resonance</dc:title>

    <dc:creator>Lei Zhu</dc:creator>
    <dc:creator>Ke Wu</dc:creator>
    <dc:identifier>doi:10.1109/22.826833</dc:identifier>
    <dc:source>Microwave Theory and Techniques, IEEE Transactions on, Vol. 48, No. 3. (2000), pp. 347-356.</dc:source>
    <dc:date>2007-11-26T20:06:00-00:00</dc:date>
    <prism:publicationYear>2000</prism:publicationYear>
    <prism:publicationName>Microwave Theory and Techniques, IEEE Transactions on</prism:publicationName>
    <prism:volume>48</prism:volume>
    <prism:number>3</prism:number>
    <prism:startingPage>347</prism:startingPage>
    <prism:endingPage>356</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>filter</prism:category>
    <prism:category>interdigital</prism:category>
    <prism:category>lumped</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/1988196">
    <title>Analysis of interdigital capacitor and quasi-lumped miniaturized filters using iterative method</title>
    <link>http://www.citeulike.org/user/dcastro/article/1988196</link>
    <description>&lt;i&gt;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 15, No. 2. (2002), pp. 169-179.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;This paper presents the application of an iterative method for fast computation of microstrip interdigital capacitor (IDC) and a quasi-lumped miniaturized filter. The use of a 2D-FFT algorithm allows simplifications in the calculation process leading to accurate results obtained 20 times faster than in the conventional method cases. Copyright © 2002 John Wiley &#38; Sons, Ltd.</description>
    <dc:title>Analysis of interdigital capacitor and quasi-lumped miniaturized filters using iterative method</dc:title>

    <dc:creator>A Gharsallah</dc:creator>
    <dc:creator>A Gharbi</dc:creator>
    <dc:creator>L Desclos</dc:creator>
    <dc:creator>H Baudrand</dc:creator>
    <dc:identifier>doi:10.1002/jnm.448</dc:identifier>
    <dc:source>International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 15, No. 2. (2002), pp. 169-179.</dc:source>
    <dc:date>2007-11-26T20:05:31-00:00</dc:date>
    <prism:publicationYear>2002</prism:publicationYear>
    <prism:publicationName>International Journal of Numerical Modelling: Electronic Networks, Devices and Fields</prism:publicationName>
    <prism:volume>15</prism:volume>
    <prism:number>2</prism:number>
    <prism:startingPage>169</prism:startingPage>
    <prism:endingPage>179</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>filter</prism:category>
    <prism:category>interdigital</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/1988192">
    <title>Interdigital Capacitors and Their Application to Lumped-Element Microwave Integrated Circuits</title>
    <link>http://www.citeulike.org/user/dcastro/article/1988192</link>
    <description>&lt;i&gt;Microwave Theory and Techniques, IEEE Transactions on, Vol. 18, No. 12. (1970), pp. 1028-1033.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;An analysis of the frequency response of interdigital capacitors, which leads to an optimal design, is given along with an expression for their static gap capacitance. The capacitor Q is given in terms of its geometry which consists of a planar interdigital thin-filrn conductor deposited on the surface of a relatively high dielectric constant substrate. Capacitance values ranging from 0.1 to 10 pF at L band with measured Q's in excess of 400 are realizable using 2-mil line and space widths on a 99.5-percent alumina substrate with a dielectric constant of 10.3. Experimental results obtained with a lumped-constant nine-section S-band Chebyscheff low-pass filter realized using spiral inductors and optimal designed interdigital capacitors are shown to be in excellent agreement with theory. The filter had less than 0.8-dB insertion loss and greater than 25dB return loss in the passband. The filter occupies an area 6.50 by 200 roils on a 24-mil-thick substrate.</description>
    <dc:title>Interdigital Capacitors and Their Application to Lumped-Element Microwave Integrated Circuits</dc:title>

    <dc:creator>GD Alley</dc:creator>
    <dc:source>Microwave Theory and Techniques, IEEE Transactions on, Vol. 18, No. 12. (1970), pp. 1028-1033.</dc:source>
    <dc:date>2007-11-26T20:04:40-00:00</dc:date>
    <prism:publicationYear>1970</prism:publicationYear>
    <prism:publicationName>Microwave Theory and Techniques, IEEE Transactions on</prism:publicationName>
    <prism:volume>18</prism:volume>
    <prism:number>12</prism:number>
    <prism:startingPage>1028</prism:startingPage>
    <prism:endingPage>1033</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>interdigital</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/1915048">
    <title>Superconducting microstrip filters using compact resonators with double-spiral inductors and interdigital capacitors</title>
    <link>http://www.citeulike.org/user/dcastro/article/1915048</link>
    <description>&lt;i&gt;Microwave Symposium Digest, 2003 IEEE MTT-S International, Vol. 3 (2003), pp. 1889-1892 vol.3.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;Novel resonators composed of double-spiral inductors and interdigital capacitors are developed, which not only are compact in size but also have no harmonics up to three times of the fundamental frequency. The center frequency is insensitive to the thickness of the substrate. A miniature seven-pole narrow-band HTS bandpass microstrip filter has been designed, fabricated and tested for an astronomy observation application, which requires a center frequency at 610 MHz and 0.82% fractional bandwidth. The computed and measured results are found in excellent agreement.</description>
    <dc:title>Superconducting microstrip filters using compact resonators with double-spiral inductors and interdigital capacitors</dc:title>

    <dc:creator>Jiafeng Zhou</dc:creator>
    <dc:creator>MJ Lancaster</dc:creator>
    <dc:creator>F Huang</dc:creator>
    <dc:source>Microwave Symposium Digest, 2003 IEEE MTT-S International, Vol. 3 (2003), pp. 1889-1892 vol.3.</dc:source>
    <dc:date>2007-11-14T17:46:09-00:00</dc:date>
    <prism:publicationYear>2003</prism:publicationYear>
    <prism:publicationName>Microwave Symposium Digest, 2003 IEEE MTT-S International</prism:publicationName>
    <prism:volume>3</prism:volume>
    <prism:startingPage>1889</prism:startingPage>
    <prism:endingPage>1892 vol.3</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>filters</prism:category>
    <prism:category>inductor</prism:category>
    <prism:category>interdigital</prism:category>
    <prism:category>microstrip</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/1880288">
    <title>Composite Right/Left-Handed Transmission Line With Wire Bonded Interdigital Capacitor</title>
    <link>http://www.citeulike.org/user/dcastro/article/1880288</link>
    <description>&lt;i&gt;Microwave and Wireless Components Letters, IEEE, Vol. 16, No. 11. (2006), pp. 624-626.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;An enhanced composite right/left-handed (CRLH) transmission line (TL) is presented in this letter. This TL, designed in microstrip technology, is implemented by means of a new improved interdigital capacitor (IDC), the so-called wire bonded IDC (WBIDC). The use of the WBIDC broadens the frequency band where the CRLH TL can be considered as a TL. A conventional 70-Omega CRLH TL (using IDCs) has been compared, by full-wave simulation and measurements, with its enhanced counterpart (using WBIDCs). In addition, this enhanced CRLH TL has been used to design a CRLH diplexer which presents several advantages over standard CRLH coupled lines (using IDCs). The diplexer response has been verified by means of a full-wave electromagnetic solver</description>
    <dc:title>Composite Right/Left-Handed Transmission Line With Wire Bonded Interdigital Capacitor</dc:title>

    <dc:creator>FP Casares-Miranda</dc:creator>
    <dc:creator>E Marquez-Segura</dc:creator>
    <dc:creator>P Otero</dc:creator>
    <dc:creator>C Camacho-Penalosa</dc:creator>
    <dc:source>Microwave and Wireless Components Letters, IEEE, Vol. 16, No. 11. (2006), pp. 624-626.</dc:source>
    <dc:date>2007-11-07T18:39:01-00:00</dc:date>
    <prism:publicationYear>2006</prism:publicationYear>
    <prism:publicationName>Microwave and Wireless Components Letters, IEEE</prism:publicationName>
    <prism:volume>16</prism:volume>
    <prism:number>11</prism:number>
    <prism:startingPage>624</prism:startingPage>
    <prism:endingPage>626</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>crlh</prism:category>
    <prism:category>interdigital</prism:category>
    <prism:category>tl</prism:category>
</item>



<item rdf:about="http://www.citeulike.org/user/dcastro/article/1880287">
    <title>Analytical model of the wire-bonded interdigital capacitor</title>
    <link>http://www.citeulike.org/user/dcastro/article/1880287</link>
    <description>&lt;i&gt;Microwave Theory and Techniques, IEEE Transactions on, Vol. 54, No. 2. (2006), pp. 748-754.&lt;/i&gt;&lt;br /&gt;&lt;br /&gt;The wire-bonded interdigital capacitor (WBIDC) is an interdigital capacitor with short circuits across the end of alternate fingers that result in an improved frequency response. This paper presents the analytical and circuital models of the WBIDC, which are useful to design and to incorporate into an electromagnetic or circuit analysis computer-aided design program. Design equations of the WBIDC are also presented. The analytical model and design equations have been validated with numerical analysis and experimental work.</description>
    <dc:title>Analytical model of the wire-bonded interdigital capacitor</dc:title>

    <dc:creator>E Marquez-Segura</dc:creator>
    <dc:creator>FP Casares-Miranda</dc:creator>
    <dc:creator>P Otero</dc:creator>
    <dc:creator>C Camacho-Penalosa</dc:creator>
    <dc:creator>JE Page</dc:creator>
    <dc:source>Microwave Theory and Techniques, IEEE Transactions on, Vol. 54, No. 2. (2006), pp. 748-754.</dc:source>
    <dc:date>2007-11-07T18:38:40-00:00</dc:date>
    <prism:publicationYear>2006</prism:publicationYear>
    <prism:publicationName>Microwave Theory and Techniques, IEEE Transactions on</prism:publicationName>
    <prism:volume>54</prism:volume>
    <prism:number>2</prism:number>
    <prism:startingPage>748</prism:startingPage>
    <prism:endingPage>754</prism:endingPage>
    <prism:category>capacitor</prism:category>
    <prism:category>interdigital</prism:category>
</item>



</rdf:RDF>

