Thu, 21 Aug 2008 09:49:26 BST CiteULike: karlberggren's Lennon http://www.citeulike.org/user/karlberggren/author/Lennon CiteULike.org en-gb Copyright © 2004-2008 citeulike.org http://www.citeulike.org/user/karlberggren/article/1203024 <i>Vol. 23, No. 6. (2005), pp. 2743-2748.</i><br /><br />Optical lithography at 193  nm with resolution enhancements and immersion is widely expected to meet the needs of the 45  nm node. Beyond this, at 32  nm and below, the solution is not as clear. In this article we present simulation results and experimental demonstrations of an all-optical approach capable of high-throughput 32  nm lithography (hybrid optical maskless lithography). In this method high-resolution dense gratings are defined in a first exposure using maskless interference lithography. A second "trim" exposure, using conventional projection lithography, customizes these gratings into useful patterns. Our simulations indicate that 32  nm node patterning can be achieved using trim tools and masks of significantly lower resolution. We also present experimental feasibility results using 157  nm "dry" interference in combination with projection 248  nm or e-beam trim exposures. The technological requirements and extendibility of such a method beyond the 32  nm node are also examined. ©2005 American Vacuum Society Hybrid optical maskless lithography: Scaling beyond the 45 nm node M Fritze TM Bloomstein B Tyrrell TH Fedynyshyn Jr DE Hardy S Cann D Lennon S Spector M Rothschild P Brooker doi:10.1116/1.2062327 Vol. 23, No. 6. (2005), pp. 2743-2748. 2007-04-02T15:46:55-00:00 2005 23 6 2743 2748 AVS 6781 lithography optical subresolution