Thu, 21 Aug 2008 14:20:35 BST CiteULike: summerxia's Dennard http://www.citeulike.org/user/summerxia/author/Dennard CiteULike.org en-gb Copyright © 2004-2008 citeulike.org http://www.citeulike.org/user/summerxia/article/907113 <i>Electron Devices, IEEE Transactions on, Vol. 28, No. 9. (1981), pp. 1025-1030.</i><br /><br />This paper presents the results of a study of the characteristics of the depletion-mode MOSFET. In particular, it is shown that the threshold voltage of this device is a function of its mode of operation (linear or saturated) due to a change in dominant conduction mechanisms caused by the finite depth of donor impurities in the channel. The effect of these impurities on the short channel behavior of the devices also is examined. Threshold voltage characteristics of depletion-mode MOSFET's MR Wordeman RH Dennard Electron Devices, IEEE Transactions on, Vol. 28, No. 9. (1981), pp. 1025-1030. 2006-10-19T19:59:40-00:00 1981 Electron Devices, IEEE Transactions on 28 9 1025 1030 depletion mos threshold