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Tag cl2 [11 articles]

Recent papers classified by the tag cl2.
  • Plasma etching of high dielectric constant materials on silicon in halogen chemistries
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 1. (2004), pp. 88-95.
    by Lin Sha, Jane P Chang
    posted to bcl3 cl2 hfo2 high-k zro2 by these_morel on 2006-02-21 09:44:45 as ** along with 1 group LTM_LETI_etching
  • Etching of high-k dielectric Zr[sub 1 - x]Al[sub x]O[sub y] films in chlorine-containing plasmas
    The 47th international symposium: Vacuum, thin films, surfaces/interfaces, and processing NAN06, Vol. 19, No. 4. (2001), pp. 1361-1366.
    by K Pelhos, VM Donnelly, A Kornblit, ML Green, RB Van Dover, L Manchanda, Y Hu, M Morris, E Bower
  • Plasma etching of HfO[sub 2] at elevated temperatures in chlorine-based chemistry
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, No. 1. (2006), pp. 30-40.
  • Plasma etching selectivity of ZrO[sub 2] to Si in BCl[sub 3]/Cl[sub 2] plasmas
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 21, No. 6. (2003), pp. 1915-1922.
    by Lin Sha, Jane P Chang
  • Ion-enhanced chemical etching of ZrO[sub 2] in a chlorine discharge
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 20, No. 5. (2002), pp. 1525-1531.
    by Lin Sha, Byeong O Cho, Jane P Chang
    posted to cl2 high-k zro2 by these_morel on 2006-02-21 09:47:00 as ** along with 1 group LTM_LETI_etching
  • notes The etching behavior of tungsten (W) with respect to the orientation of the grain boundary and masking layers
    Thin Solid Films, Vol. 320, No. 1. (4 May 1998), pp. 147-150.
  • notes Role of oxygen in ion-enhanced etching of poly-Si and WSi[sub x] with chlorine
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, No. 4. (1998), pp. 2215-2221.
    by Gowri P Kota, JW Coburn, David B Graves
  • Influence of the reactor wall composition on radicals' densities and total pressure in Cl[sub 2] inductively coupled plasmas: I. Without silicon etching
    Journal of Applied Physics, Vol. 102, No. 9. (2007)
    by G Cunge, N Sadeghi, R Ramos
    posted to absorption cl2 icp plasma xps by these_morel on 2008-03-05 09:16:38 as read
  • Influence of the reactor wall composition on radicals' densities and total pressure in Cl[sub 2] inductively coupled plasmas: II. During silicon etching
    Journal of Applied Physics, Vol. 102, No. 9. (2007)
    by G Cunge, N Sadeghi, R Ramos
    posted to absorption cl2 dissociation etching parois plasma silicon xps by these_morel on 2008-03-05 09:18:49 as read
  • Influence of reactor walls on plasma chemistry and on silicon etch product densities during silicon etching processes in halogen-based plasmas
    Plasma Sources Science and Technology, Vol. 13, No. 3. (2004), pp. 522-530.
    posted to absorption cl2 cl2-o2 dissociation etching parois plasma silicon by these_morel on 2008-03-05 09:13:22 as read
  • notes Estimating and controlling atomic chlorine concentration via actinometry
    Semiconductor Manufacturing, IEEE Transactions on, Vol. 12, No. 3. (1999), pp. 323-331.
    by CK Hanish, JW Grizzle, FL Teny
    posted to actinometry cl2 by these_morel on 2006-12-14 14:05:16 as read along with 1 group LTM_LETI_etching
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