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Tag etching [69 articles]

Recent papers classified by the tag etching.
  • notes Radio frequency plasma etching of Si/SiO[sub 2] by Cl[sub 2]/O[sub 2] : Improvements resulting from the time modulation of the processing gases
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 6. (1990), pp. 1185-1191.
    by SC Mcnevin
    posted to cl2-o2 etching gate plasma poly-si sio2 by these_morel on 2006-02-28 14:54:37 as read along with 1 group LTM_LETI_etching
  • Plasma etching selectivity of ZrO[sub 2] to Si in BCl[sub 3]/Cl[sub 2] plasmas
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 21, No. 6. (2003), pp. 1915-1922.
    by Lin Sha, Jane P Chang
    posted to bcl3 cl2 etching high-k zro2 by these_morel on 2006-02-21 09:40:20 as ** along with 1 person and 1 group newmansc LTM_LETI_etching
  • Plasma etching of HfO[sub 2] at elevated temperatures in chlorine-based chemistry
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, No. 1. (2006), pp. 30-40.
    by M Helot, T Chevolleau, L Vallier, O Joubert, E Blanquet, A Pisch, P Mangiagalli, T Lill
    posted to cl2 dielectric etching hfo2 high-k by these_morel on 2006-02-21 09:56:36 as ** along with 1 group LTM_LETI_etching
  • notes Ion-bombardment-enhanced plasma etching of tungsten with NF[sub 3]/O[sub 2]
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, No. 5. (1988), pp. 1570-1572.
    by WM Greene, DW Hess, WG Oldham
    posted to etching nf3-o2 plasma tungsten by these_morel on 2006-02-28 14:45:35 as read along with 1 group LTM_LETI_etching
  • Influence of the reactor wall composition on radicals' densities and total pressure in Cl[sub 2] inductively coupled plasmas: II. During silicon etching
    Journal of Applied Physics, Vol. 102, No. 9. (2007)
    by G Cunge, N Sadeghi, R Ramos
    posted to absorption cl2 dissociation etching parois plasma silicon xps by these_morel on 2008-03-05 09:18:49 as read
  • Effects of Nitrogen Additive Gas on Sidewall Passivation in W/TiN/High-k Dielectric Gate Etching
    Microprocesses and Nanotechnology Conference, 2000 International (2000), pp. 210-211.
    by Jae-Young Kim, Yu-Kwon Kim, Kwang-Ok Kim, Chang J Choi, Jin W Kim
    posted to dielectric etching gate high-k metal tin tungsten by these_morel on 2006-02-17 13:47:00 as read along with 1 group LTM_LETI_etching
  • Etching characteristics of high-k dielectric HfO[sub 2] thin films in inductively coupled fluorocarbon plasmas
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 23, No. 6. (2005), pp. 1691-1697.
    by Kazuo Takahashi, Kouichi Ono, Yuichi Setsuhara
    posted to etching fluorocarbon hfo2 plasma xps by these_morel on 2006-12-13 15:40:29 as read along with 1 group LTM_LETI_etching
  • notes Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma
    Vol. 23, No. 4. (2005), pp. 964-970.
    by Wan S Hwang, Jinghao Chen, Won J Yoo, Vladimir Bliznetsov
    posted to etching hbr-cl2-o2 hfn icp nitrogen optical-emission-spectroscopy tan tin volatility by these_morel on 2006-02-17 15:42:40 as read along with 1 group LTM_LETI_etching
  • notes Study of W/Ti triode plasma etching
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 10, No. 5. (1992), pp. 3076-3085.
    by JF Coulon, G Turban, P Rabinzohn, L Jeannerot
    posted to etching plasmas sf6-n2 sicl4-cl2 titanium tungsten by these_morel on 2006-02-28 15:02:41 as read along with 1 group LTM_LETI_etching
  • notes Effect of CO and CO[sub 2] addition to the CF[sub 4]/O[sub 2] gas system on the etching of a low-pressure chemical vapor deposition tungsten film
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 3. (1995), pp. 914-917.
    by Sung K Kwon, Kyung N Kim, Chul W Nam, Seong I Woo
    posted to cf4-o2 co co2 etching plasmas rie tungsten by these_morel on 2006-03-03 12:35:35 as read along with 1 group LTM_LETI_etching
  • Dry etching of titanium nitride thin films in CF[sub 4]--O[sub 2] plasmas
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 13, No. 2. (1995), pp. 335-342.
    by F Fracassi, R D'agostino, R Lamendola, I Mangieri
    posted to cf4-o2 etching titane_nitride xps by these_morel on 2006-12-13 15:42:58 as read along with 1 group LTM_LETI_etching
  • notes Molybdenum gate technology for ultrathin-body MOSFETs and FinFETs
    Electron Devices, IEEE Transactions on, Vol. 51, No. 12. (2004), pp. 1989-1996.
    by Daewon Ha, H Takeuchi, Yang-Kyu Choi, Tsu-Jae King
    posted to cl2-o2 etching molybdenum tcp_9400 by these_morel on 2006-03-17 15:12:21 as read along with 1 group LTM_LETI_etching
  • Plasma etching of refractory metals (W, Mo, Ta) and silicon in SF6 and SF6-O2. An analysis of the reaction products
    Plasma Chemistry and Plasma Processing, Vol. 5, No. 4. (1 December 1985), pp. 333-351.
    by A Picard, G Turban
    posted to etching mass-spectrometry molybdenum sf6-o2 tungsten by these_morel on 2007-03-30 15:41:30 as read along with 1 group LTM_LETI_etching
  • Thin gate oxide behavior during plasma patterning of silicon gates
    Applied Physics Letters, Vol. 75, No. 8. (1999), pp. 1069-1070.
    by L Vallier, L Desvoivres, M Bonvalot, O Joubert
    posted to etching oxidation recess silicon by these_morel on 2008-01-03 13:49:54 as read along with 1 group LTM_LETI_etching
  • notes A low damage RIE process for the fabrication of compound semiconductor based transistors with sub-100 nm tungsten gates
    Microelectronic Engineering, Vol. 83, No. 4-9. ( 2006), pp. 1159-1162.
    by X Li, X Cao, H Zhou, CDW Wilkinson, S Thoms, D Macintyre, M Holland, IG Thayne
    posted to etching rie sf6-chf3 sf6-n2 sf6-o2 tungsten by these_morel on 2006-06-19 09:36:54 as read along with 1 person and 1 group Stanley_vrc LTM_LETI_etching
  • notes Effect of hydrogen peroxide on hydrofluoric acid etching of high-k materials: ESR investigations
    Journal of Non-Crystalline Solids, Vol. 351, No. 18. (15 June 2005), pp. 1559-1564.
    by V Lowalekar, S Raghavan
    posted to dielectric etching high-k materials by these_morel on 2006-02-17 15:36:47 as read along with 1 group LTM_LETI_etching
  • Anisotropic dry etching of submicron W features using a Ti mask
    Semiconductor Science and Technology, Vol. 7, No. 12. (1992), pp. 1489-1494.
    by TR Fullowan, SJ Pearton, F Ren, GE Mahoney, RL Kostelak
    posted to cf4 etching sf6 tungsten by these_morel on 2006-12-14 14:09:51 as read along with 1 group LTM_LETI_etching
  • Silicon etching mechanisms in a CF[sub 4]/H[sub 2] glow discharge
    Journal of Applied Physics, Vol. 62, No. 2. (1987), pp. 662-672.
    by Gottlieb S Oehrlein, Holly L Williams
    posted to silicon fluorocarbon etching cf4 by these_morel on 2008-09-04 13:20:25 as **
  • Silicon doping effects in reactive plasma etching
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 4, No. 2. (1986), pp. 468-475.
    by Young H Lee, Mao M Chen
    posted to silicon plasma etching doping by these_morel on 2008-09-16 15:30:03 as **
  • Influence of reactor walls on plasma chemistry and on silicon etch product densities during silicon etching processes in halogen-based plasmas
    Plasma Sources Science and Technology, Vol. 13, No. 3. (2004), pp. 522-530.
    by G Cunge, M Kogelschatz, N Sadeghi
    posted to absorption cl2 cl2-o2 dissociation etching parois plasma silicon by these_morel on 2008-03-05 09:13:22 as read
  • notes Control of etching-product-dependent shape and selectivity in gate polysilicon reactive ion etching
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 3. (1998), pp. 1038-1042.
    by Masaaki Sato, Yoshinobu Arita
    posted to cl2-o2 etching notching plasma poly-si rie selectivity sio2 by these_morel on 2006-02-28 15:04:44 as read along with 1 group LTM_LETI_etching
  • notes Ion flux composition in HBr/Cl[sub 2]/O[sub 2] and HBr/Cl[sub 2]/O[sub 2]/CF[sub 4] chemistries during silicon etching in industrial high-density plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 5. (2002), pp. 2137-2148.
    by G Cunge, RL Inglebert, O Joubert, L Vallier, N Sadeghi
    posted to etching hbr-cl2-o2 mass-spectrometry silicon by these_morel on 2007-03-21 16:14:22 as read along with 1 group LTM_LETI_etching
  • Profile evolution and nanometre-scale linewidth control during etching of polysilicon gates in high-density plasmas
    Plasma Sources Science and Technology, Vol. 12, No. 4. (2003), pp. S72-S79.
    by Mutumi Tuda, Kenji Shintani, Junji Tanimura
    posted to ecr etching gate hbr-cl2-o2 plasma poly-si by these_morel on 2006-02-07 11:10:37 as read along with 1 group LTM_LETI_etching
  • notes 30 nm Tungsten gates etched by a low damage ICP etching for the fabrication of compound semiconductor transistors
    Microelectronic Engineering, Vol. 83, No. 4-9. ( 2006), pp. 1152-1154.
    by X Li, X Cao, H Zhou, CDW Wilkinson, S Thoms, D Macintyre, M Holland, IG Thayne
    posted to c4f8 etching icp sf6 tungsten by these_morel on 2006-07-26 12:51:56 as read along with 1 person and 1 group Stanley_vrc LTM_LETI_etching
  • Dry etching for pattern transfer
    Journal of Vacuum Science and Technology, Vol. 17, No. 5. (1980), pp. 1177-1183.
    by HW Lehmann, R Widmer
    posted to etching introduction plasma by these_morel on 2008-07-09 10:18:03 as **
  • notes Competitive reactions of fluorine and oxygen with W, WSi[sub 2], and Si surfaces in reactive ion etching using CF[sub 4]/O[sub 2]
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, No. 3. (1989), pp. 1035-1041.
    by Gottlieb S Oehrlein, Lennart J Lindstom
    posted to cf4-o2 etching plasma rie tungsten wsi by these_morel on 2006-02-28 14:50:12 as read along with 1 group LTM_LETI_etching
  • notes Evaluation of the effectiveness of H[sub 2] plasmas in removing boron from Si after etching of HfO[sub 2] films in BCl[sub 3] plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 2. (2005), pp. 547-553.
    by C Wang, VM Donnelly
    posted to bcl3 etching hfo2 plasma by these_morel on 2006-02-17 15:28:10 as read along with 1 group LTM_LETI_etching
  • Self-aligned technology for tungsten-contacted InP-based etched mesa laser devices
    Applied Physics Letters, Vol. 59, No. 3. (1991), pp. 286-288.
    by A Katz, SJ Pearton, M Geva
    posted to ecr etching tungsten by these_morel on 2008-08-20 12:58:34 as **
  • Highly anisotropic etching of submicrometer features on tungsten
    Journal of Applied Physics, Vol. 78, No. 11. (1995), pp. 6780-6783.
    by F Bounasri, E Gat, M Chaker, M Moisan, J Margot, MF Ravet
    posted to etching magnetoplasma tungsten by these_morel on 2008-08-20 12:56:04 as **
  • Poly-Si/TiN/HfO[sub 2] gate stack etching in high-density plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, No. 3. (2007), pp. 767-778.
    by A Le Gouil, O Joubert, G Cunge, T Chevolleau, L Vallier, B Chenevier, I Matko
    posted to effet-de-charge etching poly-si tin xps by these_morel on 2008-03-05 09:03:24 as read
  • notes Selective etching of high-k HfO[sub 2] films over Si in hydrogen-added fluorocarbon (CF[sub 4]/Ar/H[sub 2] and C[sub 4]F[sub 8]/Ar/H[sub 2]) plasmas
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 24, No. 3. (2006), pp. 437-443.
    by Kazuo Takahashi, Kouichi Ono
    posted to etching fluorocarbon hfo2 plasmas xps by these_morel on 2006-12-13 15:38:19 as read along with 1 group LTM_LETI_etching
  • notes Role of oxygen in ion-enhanced etching of poly-Si and WSi[sub x] with chlorine
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 16, No. 4. (1998), pp. 2215-2221.
    by Gowri P Kota, JW Coburn, David B Graves
    posted to cl2 etching molecular-beam-system poly-si wsi by these_morel on 2006-02-28 15:06:32 as read along with 1 group LTM_LETI_etching
  • notes The etching behavior of tungsten (W) with respect to the orientation of the grain boundary and masking layers
    Thin Solid Films, Vol. 320, No. 1. (4 May 1998), pp. 147-150.
    by HC Lee, S Vanhaelemeersch
    posted to cl2 etching masking-materials sf6-ar tungsten by these_morel on 2006-06-19 09:39:31 as read along with 1 person and 1 group Stanley_vrc LTM_LETI_etching
  • Reduction of silicon recess caused by plasma oxidation during high-density plasma polysilicon gate etching
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 5. (2003), pp. 2205-2211.
    by SA Vitale, BA Smith
    posted to etching oxidation recess silicon by these_morel on 2007-12-20 14:56:17 as read along with 1 group LTM_LETI_etching
  • notes Smooth etching of silicon using TMAH and isopropyl alcohol for MEMS applications
    Microelectronic Engineering, Vol. 77, No. 3-4. (April 2005), pp. 230-241.
    by Kalpathy B Sundaram, Arun Vijayakumar, Ganesh Subramanian
    posted to etching by skirnir on 2008-08-28 13:12:32 as **
  • notes Anisotropic etching of silicon in TMAH solutions
    Sensors and Actuators A: Physical, Vol. 34, No. 1. (July 1992), pp. 51-57.
    by Osamu Tabata, Ryouji Asahi, Hirofumi Funabashi, Keiichi Shimaoka, Susumu Sugiyama
    posted to etching by skirnir on 2008-08-28 13:15:45 as **
  • notes A three-dimensional MOS transistor formation technique with crystallographic orientation-dependent TMAH etchant
    Sensors and Actuators A: Physical, Vol. 111, No. 2-3. (15 March 2004), pp. 310-316.
    by Hideo Sunami, Tomoyasu Furukawa, Taiyo Masuda
    posted to etching by skirnir on 2008-08-28 14:25:55 as **
  • Gold Film Surface Preparation for Self-Assembled Monolayer Studies
    Langmuir, Vol. 23, No. 2. (16 January 2007), pp. 509-516.
    by J Kang, PA Rowntree
    posted to etching piranha_regeneration surface_preparation by sjanusz on 2007-06-27 20:26:45 as read
  • Coexistence of Multiple Conformations in Cysteamine Monolayers on Au(111)
    J. Phys. Chem. B, Vol. 109, No. 32. (18 August 2005), pp. 15355-15367.
    by J Zhang, A Bilic, JR Reimers, NS Hush, J Ulstrup
    posted to 1 au_pits etching by sjanusz on 2007-09-24 16:25:59 as read
  • Generation of Nanostructures by Scanning Near-Field Photolithography of Self-Assembled Monolayers and Wet Chemical Etching
    Nano Lett., Vol. 2, No. 11. (13 November 2002), pp. 1223-1227.
    by S Sun, GJ Leggett
    posted to 1 etching patterning photochemistry by sjanusz on 2007-09-10 08:22:18 as **
  • Tuning photonic crystal nanocavity modes by wet chemical digital etching
    Applied Physics Letters, Vol. 87, No. 2. (2005)
    by K Hennessy, A Badolato, A Tamboli, PM Petroff, E Hu, M Atature, J Dreiser, A Imamoglu
    posted to crystal digital etching photonic tuning by rsabouni on 2006-07-22 07:10:57 as *****
  • High rate sapphire (Al2O3) etching in inductively coupled plasmas using axial external magnetic field
    Thin Solid Films, Vol. 435, No. 1-2. (1 July 2003), pp. 242-246.
    by DW Kim, CH Jeong, KN Kim, HY Lee, HS Kim, YJ Sung, GY Yeom
    posted to sapphire etching bcl3 by RCorbin on 2007-01-16 10:55:30 as ** along with 1 person newmansc
  • Dry etching of sapphire substrate for device separation in chlorine-based inductively coupled plasmas
    Materials Science and Engineering B, Vol. 93, No. 1-3. (30 May 2002), pp. 60-63.
    by CH Jeong, DW Kim, JW Bae, YJ Sung, JS Kwak, YJ Park, GY Yeom
    posted to sapphire etching by newmansc on 2008-09-03 23:03:08 as read
  • Refractive Sapphire Microlenses Fabricated by Chlorine-Based Inductively Coupled Plasma Etching
    Appl. Opt., Vol. 40, No. 22. (2001), pp. 3698-3702.
    by Si-Hyun Park, Heonsu Jeon, Youn-Joon Sung, Geun-Young Yeom
    posted to sapphire etching by newmansc on 2008-09-03 22:45:42 as read
  • Fabrication of low-loss channel waveguides in Al2O3 and Y2O3 layers by inductively coupled plasma reactive ion etching
    Applied Physics B: Lasers and Optics, Vol. 89, No. 2. (3 November 2007), pp. 311-318.
    by JDB Bradley, F Ay, K Wörhoff, M Pollnau
    posted to sapphire etching by newmansc on 2008-09-03 22:49:33 as read
  • Growth of A1N by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates
    Journal of Crystal Growth, Vol. 272, No. 1-4. (10 December 2004), pp. 370-376.
    by Kenji Fujito, Tadao Hashimoto, Katsuya Samonji, James S Speck, Shuji Nakamura
    posted to wet sapphire leo etching aln by newmansc on 2008-09-03 22:41:13 as read
  • Study and formation of 2D microstructures of sapphire by focused ion beam milling
    Microelectronic Engineering, Vol. 85, No. 3. (March 2008), pp. 640-645.
    by Tao Dai, Xiangning Kang, Bei Zhang, Jun Xu, Kui Bao, Chang Xiong, Zizhao Gan
    posted to sapphire etching by newmansc on 2008-09-03 22:31:03 as read
  • Etching properties of Al2O3 films in inductively coupled plasma
    Thin Solid Films, Vol. 459, No. 1-2. (1 July 2004), pp. 122-126.
    by Dong-Pyo Kim, Ji-Won Yeo, Chang-Il Kim
    posted to sapphire etching by newmansc on 2008-09-03 22:23:47 as read
  • ICP etching of sapphire substrates
    Optical Materials, Vol. 27, No. 6. (March 2005), pp. 1171-1174.
    by YP Hsu, SJ Chang, YK Su, JK Sheu, CH Kuo, CS Chang, SC Shei
    posted to sapphire etching by newmansc on 2008-09-03 23:12:16 as **
  • Absorption spectroscopy in BCl3 inductively coupled plasmas: determination of density, rotational, translational and vibrational temperatures of BCl molecule
    Journal of Physics D: Applied Physics, Vol. 41, No. 11. (2008), 115205.
    by R Ramos, G Cunge, M Touzeau, N Sadeghi
    posted to sapphire etching by newmansc on 2008-09-03 22:42:44 as read
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