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Tag gaas [85 articles]

Recent papers classified by the tag gaas.
  • Theoretical study of the GaAs(110)-(1x1)-H2S surface
    Surface Science, Vol. 402-404 (15 May 1998), pp. 658-662.
    by M Cakmak, GP Srivastava
    posted to dft gaas h2s passivation surface by vozny on 2006-12-28 20:40:14 as ***
  • Thermal and photochemical pathways of H2S on GaAs(100)
    Surface Science, Vol. 382, No. 1-3. (20 June 1997), pp. 79-92.
    by S Conrad, DR Mullins, Xin, Zhu
    posted to gaas h2s passivation surface by vozny on 2006-12-28 20:40:31 as **
  • Predicting surface free energies with interatomic potentials and electron counting
    Journal of Physics: Condensed Matter, Vol. 17, No. 39. (5 October 2005), pp. 6123-6137.
    by DA Murdick, XW Zhou, HNG Wadley, D Nguyen-Manh
    posted to electron-counting gaas reconstruction surface by vozny on 2006-12-28 16:38:12 as ***
  • Formation of “super” As-rich GaAs(100) surfaces by high temperature exposure to arsine
    Applied Physics Letters, Vol. 60, No. 7. (1992), pp. 856-858.
    by BA Banse, JR Creighton
    posted to 001 as-rich c4x4 desorption gaas h by vozny on 2006-12-08 20:27:36 as ****
  • First-principles study of nucleation, growth, and interface structure of Fe/GaAs
    Physical Review B, Vol. 65, No. 20. (22 May 2002), 205422.
    by Steven C Erwin, Sung-Hoon Lee, Matthias Scheffler
    posted to dft fe gaas pes by vozny on 2006-11-08 17:14:46 as **
  • Modification of Alkanethiolate Monolayers by Low Energy Electron Irradiation: Dependence on the Substrate Material and on the Length and Isotopic Composition of the Alkyl Chains
    Langmuir, Vol. 16, No. 6. (21 March 2000), pp. 2697-2705.
    by M Zharnikov, S Frey, K Heister, M Grunze
    posted to gaas thiol by vozny on 2006-12-04 17:32:26 as **
  • Effect of contact properties on current transport in metal/molecule/GaAs devices
    Journal of Applied Physics, Vol. 99, No. 2. (2006)
    by Saurabh Lodha, Patrick Carpenter, David B Janes
    posted to gaas gold junction thiol transport by vozny on 2006-12-04 21:49:46 as ****
  • Structure, Bonding Nature, and Binding Energy of Alkanethiolate on As-Rich GaAs (001) Surface: A Density Functional Theory Study
    J. Phys. Chem. B, Vol. 110, No. 46. (4 November 2006)
    by O Voznyy, JJ Dubowski
    posted to 001 ab-initio density-functional dft first-principles gaas siesta thiol thiols by vozny on 2006-12-04 15:29:44 as read
  • Adsorption Kinetics of Hydrogen Sulfide and Thiols on GaAs (001) Surfaces in a Vacuum
    J. Phys. Chem. C (20 February 2008)
    by O Voznyy, JJ Dubowski
    posted to ab-initio adsorption chemisorption desorption dft dynamics energetics energy first-principles gaas h2 h2s kinetics physisorption reconstruction siesta thiol by vozny on 2008-02-22 20:08:32 as read
  • Hydrogen sulfide treatment of GaAs substrate and its effects on initial stage of ZnSe growth
    Journal of Crystal Growth, Vol. 175-176, No. Part 1. (1 May 1997), pp. 593-597.
    by Jun Suda, Ryuji Tokutome, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita
    posted to gaas h2s surface by vozny on 2006-12-28 20:41:03 as **
  • First-principles calculations of molecular- and atomic-hydrogen reactions on As-terminated GaAs(100) surfaces
    Physical Review B, Vol. 46, No. 11. (1992), 6915.
    by Yoshiyuki Miyamoto, Shinji Nonoyama
    posted to 001 desorption dft electron-counting gaas h by vozny on 2006-11-15 15:48:52 as *****
  • Enhanced current densities in Au/molecule/GaAs devices
    Applied Physics Letters, Vol. 85, No. 14. (2004), pp. 2809-2811.
    by Saurabh Lodha, David B Janes
    posted to gaas gold junction thiol transport by vozny on 2006-12-04 21:43:54 as **
  • H2S adsorption on the (110) surfaces of III-V semiconductors
    Surface Science, Vol. 344, No. 1-2. (20 December 1995), pp. 1-10.
    by E Dudzik, C Muller, IT Mcgovern, DR Lloyd, A Patchett, DRT Zahn, T Johal, R Mcgrath
    posted to 110 gaas h2s iii-v by vozny on 2006-12-28 20:40:48 as **
  • Effects of octa decyl thiol (ODT) treatment on the gallium arsenide surface and interface state density
    Thin Solid Films, Vol. 342, No. 1-2. (26 March 1999), pp. 20-29.
    by K Remashan, KN Bhat
    posted to gaas thiol by vozny on 2006-12-04 16:01:01 as **
  • Tunneling hot-electron transfer amplifier: A hot-electron GaAs device with current gain
    Applied Physics Letters, Vol. 47, No. 10. (1985), pp. 1105-1107.
    by M Heiblum, DC Thomas, CM Knoedler, MI Nathan
    posted to device gaas hot-electron mtt by taro on 2008-01-21 08:41:37 as **
  • Inverse-photoemission study of Ge(100), Si(100), and GaAs(100): Bulk bands and surface states
    Physical Review B, Vol. 47, No. 4. (15 January 1993), 2130.
    by JE Ortega, FJ Himpsel
    posted to gaas spectroscopy by taro on 2008-01-30 04:48:07 as **
  • Semiconducting and other major properties of gallium arsenide
    Journal of Applied Physics, Vol. 53, No. 10. (1982), pp. R123-R181.
    by JS Blakemore
    posted to gaas review by taro on 2008-02-26 02:01:55 as ** along with 1 person eyliu
  • BEEM study of electron tunnelling across single AlAs barriers
    Applied Surface Science, Vol. 123-124 (1 January 1998), pp. 255-260.
    by Mao-Long Ke, DI Westwood
    posted to alas beem gaas by taro on 2008-01-30 08:33:23 as **
  • Low-temperature scanning tunneling spectroscopy of n-type GaAs(110) surfaces
    Physical Review B, Vol. 66, No. 16. (3 October 2002), 165204.
    by RM Feenstra, G Meyer, F Moresco, KH Rieder
    posted to gaas spectroscopy by taro on 2008-01-30 05:11:48 as **
  • Scanning tunneling spectroscopy of n-type GaAs under laser irradiation
    Applied Physics Letters, Vol. 70, No. 16. (1997), pp. 2162-2164.
    by Takuji Takahashi, Masahiro Yoshita
    posted to beem gaas spectroscopy by taro on 2008-01-30 09:11:00 as **
  • Electronic structure of ideal metal/GaAs contacts
    Physical Review Letters, Vol. 65, No. 21. (19 November 1990), 2728.
    by Mark van Schilfgaarde, N Newman
    posted to gaas schottky by taro on 2008-01-30 04:40:55 as **
  • Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors
    Physical Review B, Vol. 50, No. 7. (1994), 4561.
    by RM Feenstra
    posted to gaas spectroscopy theory by taro on 2008-01-30 05:06:01 as **
  • Experimental test of the planar tunneling model for ballistic electron emission spectroscopy
    Physical Review B, Vol. 67, No. 15. (10 April 2003), 155307.
    by Ian Appelbaum, Rahul Sheth, Ilan Shalish, KJ Russell, V Narayanamurti
    posted to beem gaas by taro on 2008-01-30 08:19:09 as **
  • GaAs lower conduction-band minima: Ordering and properties
    Physical Review B, Vol. 14, No. 12. (15 December 1976), 5331.
    by DE Aspnes
    posted to gaas spectroscopy by taro on 2008-01-30 09:46:06 as **
  • Hot-Electron Spectroscopy of GaAs
    Physical Review Letters, Vol. 54, No. 14. (April 1985), 1570.
    by JR Hayes, AFJ Levi, W Wiegmann
    posted to gaas mtt spectroscopy by taro on 2008-01-21 08:11:24 as **
  • Electronic structure at the PTCDA/GaAs and NTCDA/GaAs interfaces
    Technical Physics, Vol. 50, No. 2. (6 February 2005), pp. 213-216.
    by S Komolov, Yu Aliaev, N Potyupkin, I Buzin
    posted to gaas ntcda ptcda tcs unoccupied by soes on 2008-04-17 09:52:41 as **
  • Fabrication of high Q square-lattice photonic crystal microcavities
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 6. (2003), pp. 2918-2921.
    by K Hennessy, C Reese, A Badolato, CF Wang, A Imamoglu, PM Petroff, E Hu
    posted to crystal gaas photonic by rsabouni on 2006-07-22 07:14:51 as ***** along with 1 person and 1 group djavid Photonic Crystal
  • Photon Statistics from Coupled Quantum Dots
    Physical Review Letters, Vol. 95, No. 13. (2005)
    by Brian D Gerardot, Stefan Strauf, Michiel JA de Dood, Andrey M Bychkov, Antonio Badolato, Kevin Hennessy, Evelyn L Hu, Dirk Bouwmeester, Pierre M Petroff
    posted to dots gaas inas quantum by rsabouni on 2006-07-22 06:56:52 as **
  • Hot-hole lasers in III--V semiconductors
    Journal of Applied Physics, Vol. 90, No. 4. (2001), pp. 1692-1697.
    by P Kinsler, Th
    posted to gaas hole hot-hole insb laser physics semiconductor valence-band by pak on 2008-07-15 16:59:40 as read
  • Intersubband electron-electron scattering in asymmetric quantum wells designed for far-infrared emission
    Physical Review B, Vol. 58, No. 8. (1998), 4771.
    by P Kinsler, P Harrison, RW Kelsall
    posted to electron gaas ingaas inter-subband physics quantum-well scattering by pak on 2008-07-15 17:25:23 as read
  • Nonequilibrium electron heating in inter-subband terahertz lasers
    Journal of Applied Physics, Vol. 91, No. 3. (2002), pp. 904-910.
    by P Kinsler, RW Kelsall, P Harrison
    posted to electron gaas ingaas inter-subband monte-carlo physics semiconductor by pak on 2008-07-15 17:02:55 as read
  • Monte Carlo modelling of far-infrared intersubband lasers
    Physica E: Low-dimensional Systems and Nanostructures, Vol. 7, No. 1-2. (April 2000), pp. 48-51.
    by RW Kelsall, P Kinsler, P Harrison
    posted to electron gaas ingaas inter-subband laser monte-carlo physics semiconductor by pak on 2008-07-15 17:04:51 as read
  • Motional Narrowing in Semiconductor Microcavities
    Physical Review Letters, Vol. 77, No. 23. (2 December 1996), 4792.
    by DM Whittaker, P Kinsler, TA Fisher, MS Skolnick, A Armitage, AM Afshar, MD Sturge, JS Roberts
    posted to algaas exciton gaas physics polariton semiconductor spectrum by pak on 2008-07-15 17:24:27 as read
  • Linewidth narrowing of polaritons
    Physical Review B, Vol. 54, No. 7. (1996), 4988.
    by P Kinsler, DM Whittaker
    posted to algaas exciton gaas microcavity physics polariton semiconductor spectrum by pak on 2008-07-15 17:28:13 as read
  • Molecular-beam epitaxy on exact and vicinal GaAs(1-bar 1-bar 1-bar) substrates
    Proceedings of the 12th molecular-beam epitaxy workshop, Vol. 11, No. 3. (1993), pp. 779-782.
    by K Yang, LJ Schowalter, BK Laurich, IH Campell, DL Smith
    posted to 111b gaas by mllee on 2008-02-28 18:00:43 as **
  • Growth of GaAs, AlGaAs, and InGaAs on (111)B GaAs by molecular-beam epitaxy
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, No. 2. (1988), pp. 638-641.
    by K Elcess, JL Liévin, CG Fonstad
    posted to 111b gaas mbe by mllee on 2008-02-28 20:16:55 as **
  • Investigation of (111) strained layers: Growth, photoluminescence, and internal electric fields
    Journal of Applied Physics, Vol. 71, No. 11. (1992), pp. 5531-5538.
    by PJ Harshman, S Wang
    posted to 111b gaas by mllee on 2008-02-28 20:10:08 as **
  • Analysis of twin defects in GaAs(111)B molecular beam epitaxy growth
    Papers from the 18th north american conference on molecular beam epitaxy, Vol. 18, No. 3. (2000), pp. 1566-1571.
    by Yeonjoon Park, Michael J Cich, Rian Zhao, Petra Specht, Eicke R Weber, Eric Stach, Shinji Nozaki
    posted to 111b gaas mbe tem by mllee on 2008-02-28 18:06:51 as **
  • Plasmonic nanoparticle enhanced light absorption in GaAs solar cells
    Applied Physics Letters, Vol. 93, No. 12. (2008)
    by Keisuke Nakayama, Katsuaki Tanabe, Harry A Atwater
    posted to solar plasmonic photovoltaic gaas by mllee on 2008-09-23 15:05:03 as **
  • Intermixing and lateral composition modulation in GaAs/GaSb short period superlattices
    Journal of Applied Physics, Vol. 94, No. 3. (2003), pp. 1667-1675.
    by C Dorin, Mirecki J Millunchick, C Wauchope
    posted to gaas gaassb gasb lateralcompositionmodulation phaseseparation sps by mllee on 2008-07-24 15:19:18 as **
  • <emphasis emphasistype="italic">In Situ</emphasis> Surface Passivation and CMOS-Compatible Palladium&#x2013;Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs
    Electron Device Letters, IEEE, Vol. 29, No. 6. (2008), pp. 553-556.
    by HC Chin, M Zhu, CH Tung, GS Samudra, YC Yeo
    posted to ald gaas mosfet by mllee on 2008-05-26 13:19:54 as **
  • Threading dislocation reduction mechanisms in low-temperature-grown GaAs
    Journal of Applied Physics, Vol. 86, No. 9. (1999), pp. 4836-4842.
    by SK Mathis, XH Wu, AE Romanov, JS Speck
    posted to dislocation doping gaas ltgaas by mllee on 2008-06-12 20:19:43 as **
  • Why Does Wurtzite Form in Nanowires of III-V Zinc Blende Semiconductors?
    Physical Review Letters, Vol. 99, No. 14. (2007)
    by Frank Glas, Jean C Harmand, Gilles Patriarche
    posted to 111b gaas nanowire stackingfaults wurtzite by mllee on 2008-04-29 23:04:46 as **
  • Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy
    Physical Review B (Condensed Matter and Materials Physics), Vol. 77, No. 15. (2008)
    by C Colombo, D Spirkoska, M Frimmer, G Abstreiter, Fontcuberta
    posted to ssmbe onr nanowire gaas catalyst-free by mllee on 2008-07-22 15:29:00 as **
  • “A transmission electron microscope study of twin structure in GaAs/GaAs (111)B grown via molecular-beam epitaxy”
    Journal of Applied Physics, Vol. 69, No. 4. (1991), pp. 2219-2223.
    by KC Rajkumar, P Chen, A Madhukar
    posted to 111b gaas mbe twins by mllee on 2008-02-28 20:22:49 as **
  • A femtosecond X-ray//optical cross-correlator
    Nat Photon, Vol. 2, No. 3. (March 2008), pp. 165-169.
    by Cornelius Gahl, Armin Azima, Martin Beye, Martin Deppe, Kristian Dobrich, Urs Hasslinger, Franz Hennies, Alexej Melnikov, Mitsuru Nagasono, Annette Pietzsch, Martin Wolf, Wilfried Wurth, Alexander Fohlisch
    posted to cross-correlator fel femtosecond flash gaas optical pulse reflectivity x-ray by michaelbussmann on 2008-03-06 10:59:54 as ***
  • Rhodium-related deep levels in n-type MOCVD GaAs
    Physica B: Condensed Matter, Vol. 308-310 (December 2001), pp. 816-819.
    by Zafar, A Majid, Haidar, Akbar Ali, Nasim Zafar, A Dadgar, D Bimberg
    posted to deep dlts gaas iii-v levels mocvd rhodium by majid_pk99 on 2006-09-06 16:14:58 as *****
  • Deep levels in rhodium-doped p-type MOCVD GaAs
    Physica B: Condensed Matter, Vol. 340-342 (31 December 2003), pp. 362-366.
    by A Majid, Zafar, A Dadgar, D Bimberg
    posted to deep gaas levels mocvd p-type rhodium by majid_pk99 on 2006-09-06 12:39:33 as *****
  • notes Effects of Si-doped GaAs layer on optical properties of InAs quantum dots
    Physica E: Low-dimensional Systems and Nanostructures, Vol. 25, No. 4. (January 2005), pp. 647-653.
    by YM Park, YJ Park, KM Kim, JI Lee, KH Yoo
    posted to 051130 bandgap doped dots filling gaas quantum read renormalization si state by kwei on 2005-11-30 21:22:54 as ***
  • Measurement of Rashba and Dresselhaus spin-orbit magnetic fields
    Nat Phys, Vol. 3, No. 9. (2007), pp. 650-654.
    by Lorenz Meier, Gian Salis, Ivan Shorubalko, Emilio Gini, Silke Schon, Klaus Ensslin
    posted to gaas spinorbit by Juriaan on 2007-09-17 13:05:02 as read along with 1 person citemaster
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