Tag gan [at least 200 articles] Export

Recent papers classified by the tag gan.

	AlGaN/GaN Heterostructure Field-Effect Transistors (HFETs) on Si Substrates for Large-Current Operation [My Copy] Japanese Journal of Applied Physics, Vol. 43, No. No. 7A. (11 June 2004), pp. L831-L833. by Shinichi Iwakami, Masataka Yanagihara, Osamu Machida, et al.Emiko Chino, Nobuo Kaneko, Hirokazu Goto, Kohji Ohtsuka posted to gan_substrate_si gan_powerswitch gan by stoffels on 2009-12-03 09:54:12 as
	Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement Using Grating Field Plates [My Copy] Simulation of Semiconductor Processes and Devices 2007 (2007), pp. 277-280. by E. Bahat-Treidel, V. Sidorov, J. Würfl, G. Tränkle posted to gan_powerswitch gan_modelling gan by stoffels on 2009-12-03 09:23:42 as
	Evaluation of AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate in Power Factor Correction Circuit [My Copy] Japanese Journal of Applied Physics, Vol. 46, No. No. 29. (20 July 2007), pp. L721-L723. by Shinichi Iwakami, Osamu Machida, Yoshimichi Izawa, et al.Ryohei Baba, Masataka Yanagihara, Toshihiro Ehara, Nobuo Kaneko, Hirokazu Goto, Akio Iwabuchi posted to gan_substrate_si gan_powerswitch gan by stoffels on 2009-12-02 17:22:19 as
	20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate [My Copy] Japanese Journal of Applied Physics, Vol. 46, No. No. 24. (15 June 2007), pp. L587-L589. by Shinichi Iwakami, Osamu Machida, Masataka Yanagihara, et al.Toshihiro Ehara, Nobuo Kaneko, Hirokazu Goto, Akio Iwabuchi posted to gan_substrate_si gan_powerswitch gan by stoffels on 2009-12-02 17:20:53 as
	GaAs FET device and circuit simulation in SPICE [My Copy] Electron Devices, IEEE Transactions on, Vol. 34, No. 2. (09 August 2005), pp. 160-169. by H. Statz, P. Newman, I. W. Smith, R. A. Pucel, H. A. Haus posted to gan_modelling gan by stoffels on 2009-12-02 16:13:56 as
	AlGaN/GaN/AlGaN Double Heterostructures on Silicon Substrates for High Breakdown Voltage Field-Effect Transistors with low On-Resistance [My Copy] Japanese Journal of Applied Physics, Vol. 48, No. No. 4. (20 April 2009), 04C101. by Domenica Visalli, Marleen Van Hove, Joff Derluyn, et al.Stefan Degroote, Maarten Leys, Kai Cheng, Marianne Germain, Gustaaf Borghs posted to gan_processing gan_powerswitch gan by stoffels on 2009-12-02 15:56:57 as
	AlGaN-based heterostructures grown on 4 inch Si(111) by MOVPE [My Copy] physica status solidi (c), Vol. 5, No. 6. (2008), pp. 1600-1602. by Kai Cheng, M. Leys, J. Derluyn, et al.K. Balachander, S. Degroote, M. Germain, G. Borghs posted to gan_processing gan_powerswitch gan by stoffels on 2009-12-02 15:43:23 as
	A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz [My Copy] Electron Device Letters, IEEE, Vol. 29, No. 8. (22 July 2008), pp. 824-826. by Yifeng Wu, M. Jacob-Mitos, M. L. Moore, S. Heikman posted to gan_powerswitch gan by stoffels on 2009-12-02 15:27:47 as
	Switching assessment of GaN transistors for power conversion applications [My Copy] Power Electronics and Applications, 2009. EPE '09. 13th European Conference on (2009), pp. 1-6. by J. Das, D. Marcon, M. Van Hove, J. Derluyn, M. Germain, G. Borghs posted to gan_powerswitch gan by stoffels on 2009-12-02 14:23:02 as
	C-doped semi-insulating GaN HFETs on sapphire substrates with a high breakdown voltage and low specific on-resistance [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 25, No. 6. (2007), pp. 1836-1841. by Y. C. Choi, J. Shi, M. Pophristic, M. G. Spencer, L. F. Eastman posted to gan_powerswitch gan by stoffels on 2009-12-02 11:09:43 as
	High performance AlGaN/GaN power switch with HfO[sub 2] insulation [My Copy] Applied Physics Letters, Vol. 95, No. 4. (July 2009), 042103. by Junxia Shi, Lester F. Eastman, Xiaobin Xin, Milan Pophristic posted to gan_powerswitch gan by stoffels on 2009-12-02 10:35:17 as
	DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx [My Copy] Semiconductor Science and Technology, Vol. 22, No. 7. (July 2007), pp. 717-721. by J. Y. Shiu, V. Desmaris, N. Rorsman, et al.K. Kumakura, T. Makimoto, H. Zirath, E. Y. Chang posted to gan_processing gan by stoffels on 2009-12-02 10:29:00 as
	High breakdown voltage AlGaN/GaN HEMTs employing fluoride plasma treatment [My Copy] Physica Scripta, Vol. 78, No. 6. (2008), 065802. by Kyu-Heon Cho, Young-Hwan Choi, Jiyong Lim, Min-Koo Han posted to gan_processing gan_powerswitch gan_modelling gan by stoffels on 2009-12-02 10:26:57 as
	Numerical simulation of current–voltage characteristics of AlGaN/GaN HEMTs at high temperatures [My Copy] Semiconductor Science and Technology, Vol. 20, No. 2. (2005), pp. 188-192. by Yuancheng Chang, K. Y. Tong, C. Surya posted to gan_modelling gan by stoffels on 2009-12-02 10:24:50 as
	2D simulation of static surface states in AlGaN/GaN HEMT and GaN MESFET devices [My Copy] Semiconductor Science and Technology, Vol. 20, No. 8. (August 2005), pp. 864-869. by J. M. Tirado, J. L. Sanchez-Rojas, J. I. Izpura posted to gan_modelling gan by stoffels on 2009-12-02 10:22:18 as
	A Physics-Based Compact Direct-Current and Alternating-Current Model for AlGaN/GaN High Electron Mobility Transistors [My Copy] Chinese Physics Letters, Vol. 24, No. 10. (2007), pp. 2998-3001. by Li Miao, Wang Yan posted to gan_modelling gan by stoffels on 2009-12-02 10:20:22 as
	An AlGaN/GaN HEMT power switch employing a field plate and a floating gate [My Copy] Physica Scripta, Vol. T126 (2006), pp. 65-67. by Seung-Chul Lee, Min-Woo Ha, Jin-Cherl Her, Jiyong Lim, Kwang-Seok Seo, Min-Koo Han posted to gan_powerswitch gan by stoffels on 2009-12-02 10:17:29 as
	Dedicated Large-Signal GaN HEMT Model for Switching-Mode Circuit Analysis and Design [My Copy] Microwave and Wireless Components Letters, IEEE, Vol. 19, No. 11. (25 September 2009), pp. 740-742. by P. Aflaki, R. Negra, F. M. Ghannouchi posted to gan gan_modelling by stoffels on 2009-12-01 16:51:51 as
	Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation [My Copy] Microelectronics Journal, Vol. 38, No. 10-11. (October 2007), pp. 1013-1020. by S. Kumar, A. Agrawal, R. Chaujar, S. Kabra, M. Gupta, R. Gupta posted to gan gan_modelling by stoffels on 2009-12-01 16:47:57 as
	Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency [My Copy] Microelectronics Journal, Vol. 39, No. 12. (December 2008), pp. 1416-1424. by S. Kumar, A. Agrawal, R. Chaujar, M. Gupta, R. Gupta posted to gan gan_modelling by stoffels on 2009-12-01 16:43:46 as
	Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction [My Copy] New Journal of Physics, Vol. 9, No. 10. (October 2007), pp. 389-389. by A. Dadgar, F. Schulze, M. Wienecke, et al.A. Gadanecz, J. Blasing, P. Veit, T. Hempel, A. Diez, J. Christen, A. Krost posted to gan gan_growth by stoffels on 2009-11-19 14:56:19 as
	AlGaN/GaN HEMTs-an overview of device operation and applications [My Copy] Proceedings of the IEEE, Vol. 90, No. 6. (07 November 2002), pp. 1022-1031. by U. K. Mishra, P. Parikh, Yi-Feng Wu posted to gan_powerswitch gan by stoffels on 2009-11-19 14:07:35 as
	GaN:Eu electroluminescent devices grown by interrupted growth epitaxy [My Copy] Thin Solid Films, Vol. 496, No. 2. (21 February 2006), pp. 636-642. by C. Munasinghe, A. Steckl posted to mbe gan by Nitrides-TL-NTU on 2009-11-12 10:40:41 as
	A comparative study of surface reconstruction of wurtzite GaN on (0001) sapphire by RF plasma-assisted molecular beam epitaxy [My Copy] Journal of Crystal Growth, Vol. 231, No. 1-2. (September 2001), pp. 8-16. by K. Lee posted to sapphire mbe gan by Nitrides-TL-NTU on 2009-11-12 03:06:18 as
	The origin of the residual conductivity of GaN films on ferroelectric materials [My Copy] Journal of Crystal Growth, Vol. 311, No. 16. (01 August 2009), pp. 4001-4006. by Kyoung-Keun Lee, Zhuhua Cai, Katherine Ziemer, William A. Doolittle posted to gan by Nitrides-TL-NTU on 2009-11-12 02:57:42 as
	Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators [My Copy] Applied Physics Letters, Vol. 94, No. 23. (2009), 233506. by Marc Faucher, Bertrand Grimbert, Yvon Cordier, et al.Nicolas Baron, Arnaud Wilk, Hacène Lahreche, Philippe Bove, Marc François, Pascal Tilmant, Thomas Gehin, Christiane Legrand, Matthieu Werquin, Lionel Buchaillot, Christophe Gaquière, Didier Théron posted to resonator nems motion-detection gan by akhuettel on 2009-08-18 15:22:55 as
	Progress in GaN Performances and Reliability [My Copy] Device Research Conference, 2007 65th Annual In Device Research Conference, 2007 65th Annual (2007), pp. 35-36. by P. Saunier, C. Lee, A. Balistreri, et al.D. Dumka, J. Jimenez, H. Q. Tserng, M. Y. Kao, P. C. Chao, K. Chu, A. Souzis, I. Eliashevich, S. Guo, J. Del Alamo, J. Joh, M. Shur posted to gan by Nitrides-TL-NTU on 2009-08-05 03:31:40 as
	Bulk growth of gallium nitride: challenges and difficulties [My Copy] Crystal Research and Technology, Vol. 42, No. 12. (2007), pp. 1162-1175. by M. Bockowski posted to bulk gan by Nitrides-TL-NTU on 2009-07-15 07:32:57 as
	Surface potential of n- and p-type GaN measured by Kelvin force microscopy [My Copy] Applied Physics Letters, Vol. 93, No. 21. (2008), 212107. by S. Barbet, R. Aubry, M. A. di Forte-Poisson, et al.J. C. Jacquet, D. Deresmes, T. Meìlin, D. Theìron posted to gallium gan kelvin microscopy nitride probe by postvak on 2009-06-25 12:15:06 as
	50% PAE WCDMA basestation amplifier implemented with GaN HFETs [My Copy] Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE In Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE (2005), 4 pp.. by D. Kimball, P. Draxler, J. Jeong, et al.C. Hsia, S. Lanfranco, W. Nagy, K. Linthicum, L. Larson, P. Asbeck, P. Asbeck posted to et gan ucsd wcdma by hoverste2 on 2009-04-24 20:59:17 as along with 1 person hoverste
	Base-band predistortion linearization scheme of high efficiency power amplifiers for wireless applications [My Copy] Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008. Workshop on In Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008. Workshop on (2008), pp. 119-122. by V. Camarchia, P. Colantonio, Donati, et al.R. Giofre, E. G. Lima, L. Piazzon, M. Pirola, R. Quaglia posted to doherty dpd gan ldmos by hoverste2 on 2009-04-24 19:33:40 as
	AlGaN/GaN 120W WCDMA Doherty Amplifier with Digital Pre-Distortion Correction [My Copy] Wireless and Microwave Technology Conference, 2006. WAMICON '06. IEEE Annual In Wireless and Microwave Technology Conference, 2006. WAMICON '06. IEEE Annual (2006), pp. 1-3. by M. J. Poulton, W. K. Leverich, P. Garber, et al.J. B. Shealy, R. Vetury, J. D. Brown, D. S. Green, S. R. Gibb, D. K. Choi posted to doherty gan rfmd wcdma by hoverste2 on 2009-04-24 18:53:43 as
	Highly Efficient Doherty Amplifier Based on Class-E Topology for WCDMA Applications [My Copy] Microwave and Wireless Components Letters, IEEE In Microwave and Wireless Components Letters, IEEE, Vol. 18, No. 9. (2008), pp. 608-610. by Yong-Sub Lee, Mun-Woo Lee, Yoon-Ha Jeong posted to class-e doherty gan wcdma by hoverste2 on 2009-04-24 18:38:05 as
	High efficiency GaN-based LEDs and lasers on SiC [My Copy] Journal of Crystal Growth, Vol. 272, No. 1-4. (10 December 2004), pp. 242-250. by J. Edmond, A. Abare, M. Bergman, et al.J. Bharathan, K. Leebunker, D. Emerson, K. Haberern, J. Ibbetson, M. Leung, P. Russel posted to lasers diode gan iii-nitride ld led sic by rodney on 2009-03-24 03:25:03 as
	Design and characterization of GaN/InGaN solar cells [My Copy] Applied Physics Letters, Vol. 91, No. 13. (2007) by Omkar Jani, Ian Ferguson, Christiana Honsberg, Sarah Kurtz posted to gan ingan multijunction photovoltaic solar by mllee on 2009-03-10 01:57:25 as
	Schottky contact and the thermal stability of Ni on n-type GaN [My Copy] Journal of Applied Physics, Vol. 80, No. 3. (1996), pp. 1623-1627. by J. D. Guo, F. M. Pan, M. S. Feng, R. J. Guo, P. F. Chou, C. Y. Chang posted to gan schottky by dalyx on 2008-12-15 20:36:37 as
	Plasma Treatment for Leakage Reduction in AlGaN/GaN and GaN Schottky Contacts [My Copy] Electron Device Letters, IEEE In Electron Device Letters, IEEE, Vol. 29, No. 4. (2008), pp. 297-299. by Rongming Chu, Likun Shen, N. Fichtenbaum, D. Brown, S. Keller, U. K. Mishra posted to chu gan by skirank on 2008-11-04 21:42:05 as
	V-Gate GaN HEMTs for X-Band Power Applications [My Copy] Electron Device Letters, IEEE In Electron Device Letters, IEEE, Vol. 29, No. 9. (2008), pp. 974-976. by Rongming Chu, Likun Shen, N. Fichtenbaum, et al.D. Brown, Zhen Chen, S. Keller, S. P. Denbaars, U. K. Mishra posted to chu gan v-gate by skirank on 2008-11-04 21:38:20 as
	Metal modulation epitaxy growth for extremely high hole concentrations above 10[sup 19] cm[sup -3] in GaN [My Copy] Applied Physics Letters, Vol. 93, No. 17. (2008), 172112. by Gon Namkoong, Elaissa Trybus, Kyung K. Lee, Michael Moseley, W. Alan Doolittle, David C. Look posted to autocompensation doping gan widebandgap by mllee on 2008-11-04 01:40:51 as along with 1 person Nitrides-TL-NTU
	Some effects of oxygen impurities on AlN and GaN [My Copy] Journal of Crystal Growth, Vol. 246, No. 3-4. (December 2002), pp. 287-298. by Glen A. Slack, Leo J. Schowalter, Donald Morelli, Jaime A. Freitas posted to gan impurity oxygen by newmansc on 2008-09-05 21:26:31 as
	Misfit dislocation formation in the AlGaN/GaN heterointerface [My Copy] Journal of Applied Physics, Vol. 96, No. 12. (2004), pp. 7087-7094. by J. A. Floro, D. M. Follstaedt, P. Provencio, S. J. Hearne, S. R. Lee posted to algan dislocation gan moss strainrelaxation by mllee on 2008-06-10 20:26:55 as
	Development of GaN wide bandgap technology for microwave power applications [My Copy] Microwave Magazine, IEEE In Microwave Magazine, IEEE, Vol. 3, No. 1. (2002), pp. 80-87. by S. Nuttinck, E. Gebara, J. Laskar, M. Harris posted to gan by OlivierL on 2008-05-22 10:25:02 as
	Study of self-heating effects, temperature-dependent modeling, and pulsed load-pull measurements on GaN HEMTs [My Copy] Microwave Theory and Techniques, IEEE Transactions on In Microwave Theory and Techniques, IEEE Transactions on, Vol. 49, No. 12. (2001), pp. 2413-2420. by S. Nuttinck, E. Gebara, J. Laskar, H. M. Harris posted to gan measurement modeling by OlivierL on 2008-05-22 10:23:49 as
	Improved RF modeling techniques for enhanced AlGaN/GaN HFETs [My Copy] Microwave and Wireless Components Letters, IEEE In Microwave and Wireless Components Letters, IEEE, Vol. 13, No. 4. (2003), pp. 140-142. by S. Nuttinck, E. Gebara, J. Laskar, J. Shealy, M. Harris posted to gan hfet modeling by OlivierL on 2008-05-22 10:20:55 as
	High efficiency digitally linearized GaN based power amplifier for 3G applications [My Copy] Radio and Wireless Symposium, 2008 IEEE In Radio and Wireless Symposium, 2008 IEEE (2008), pp. 419-422. by S. Bensmida, O. Hammi, F. M. Ghannouchi posted to dpd gan loadpull multi-harmonic by hoverste on 2008-05-05 05:18:30 as
	Comparative analysis of GaAs/LDMOS/GaN high power transistors in a digital predistortion amplifier system [My Copy] Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings In Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings, Vol. 2 (2005), 4 pp.. by B. Vassilakis, A. Cova posted to comparison device dpd gaas gan ldmos by hoverste on 2008-05-05 05:07:09 as
	Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy [My Copy] Journal of Applied Physics, Vol. 82, No. 11. (1997), pp. 5472-5479. by E. J. Tarsa, B. Heying, X. H. Wu, P. Fini, S. P. DenBaars, J. S. Speck posted to gan mbe by mllee on 2008-04-04 03:37:14 as along with 1 person Nitrides-TL-NTU
	Uniformity and control of surface morphology during growth of GaN by molecular beam epitaxy [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 4. (2005), pp. 1379-1385. by C. Poblenz, P. Waltereit, J. S. Speck posted to gan mbe morphology by Nitrides-TL-NTU on 2008-01-28 07:45:37 as
	The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes [My Copy] Science, Vol. 281, No. 5379. (14 August 1998), pp. 956-961. by Shuji Nakamura posted to gan led piezoelectric by vincentf on 2008-01-23 12:35:52 as
	Applications of GaN-based materials in modern optoelectronics [My Copy] Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments II, Vol. 5484, No. 1. (2004), pp. 328-335. by Rafal Dylewicz, Sergiusz Z. Patela, Regina Paszkiewicz edited by Ryszard S. Romaniuk posted to gan by suresh11 on 2007-12-20 12:02:02 as along with 1 person dharma

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mbe	96
si	75
singapore	33
pa-mbe	24
mocvd	23
intro	22
modeling	17
rf-mbe	17
sapphire	16
sic	15
theory	15
gan_powerswitch	13
on	13
qd	11
gan_modelling	9
pl	9
ammonia	8
movpe	8
qw	8
pa	6
hemt	5
reliability	5
wcdma	5
cubic	4
dpd	4
esempi	4
gan-substrate	4
gan_processing	4
led	4
rare-earth	4
rheed	4
algan	3
aln	3
dbr	3
doherty	3
ecr-mbe	3
gaas-substrate	3
gallium	3
gan_substrate_si	3
gan_template	3
nano	3
nitride	3
stress	3
vicinal	3
absorption	2
chu	2
crystal	2
diode	2
dlts	2
doping	2
et	2
growth	2
hexagonal	2
hfn	2
iii-nitride	2
lasers	2
lateral	2
ld	2
ldmos	2
mgo	2
model	2
nanoepitaxy	2
nanorods	2
optical	2
photonic	2
picogiga	2
piezo	2
sicoi	2
soi	2
solar	2
stranski-krastanov	2
tem	2
thick	2
two-photon	2
autosurfactant	1
collapse	1
cubi	1
electron	1
electron-counting	1
fet	1
gaas	1
gas	1
grwoth	1
gs_mbe	1
morphology	1
nanoporous	1
nitrogen	1
nitronex	1
nucleation	1
pambe	1
piezoelectric	1
powder	1
probe	1
reflectance	1
s1	1
substrate	1
ucsd	1
use	1
v-gate	1
zrb	1

Tag gan [at least 200 articles] Export

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