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Tag introduction [267 articles]

Recent papers classified by the tag introduction.
  • Methods and Techniques of Complex Systems Science: An Overview
    (15 Jul 2003)
    by Cosma R Shalizi
  • An Introduction to Sequential Monte Carlo Methods
    Journal of the Royal Statistical Society: Series D (The Statistican), Vol. 52, No. 4. (December 2003), pp. 694-695.
    by F Kemp
    posted to an carlo introduction methods monte sequential to by wooden on 2006-12-09 13:45:08 as ** along with 1 person syoyo
  • An introduction to graphical models
    (2001)
    by Kevin Murphy
  • An Introduction to Variational Methods for Graphical Models
    Mach. Learn., Vol. 37, No. 2. (1999), pp. 183-233.
    by Michael I Jordan, Zoubin Ghahramani, Tommi S Jaakkola, Lawrence K Saul
  • The role of shear forces in arterial branching
    J. Gen. Physiol., Vol. 67, No. 2. (1 February 1976), pp. 213-222.
    by M Zamir
    posted to tree shear murrays_law introduction branching arterial by tsjipko on 2008-05-17 23:08:42 as **
  • Konstruktivistisches Lernen mit Moodle: Praktische Einsatzmöglichkeiten in Bildungsinstitutionen
    by Ulrike Höbarth
    posted to moodle introduction ger 2007 by Torsten_Holmer on 2008-06-24 16:49:15 as **
  • Introduced species and their missing parasites.
    Nature, Vol. 421, No. 6923. (6 February 2003), pp. 628-630.
    by ME Torchin, KD Lafferty, AP Dobson, VJ McKenzie, AM Kuris
  • Characteristics and mechanism of etch process sensitivity to chamber surface condition
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 1. (2001), pp. 166-171.
    by Songlin Xu, Zhiwen Sun, Xueyu Qian, John Holland, Dragan Podlesnik
    posted to introduction cleaning by these_morel on 2008-07-11 15:10:19 as **
  • Plasma etching: principles, mechanisms, application to micro- and nano-technologies
    Applied Surface Science, Vol. 164, No. 1-4. (1 September 2000), pp. 72-83.
    by Christophe Cardinaud, Marie-Claude Peignon, Pierre-Yves Tessier
    posted to volatility metal introduction by these_morel on 2008-07-18 12:38:24 as **
  • Microprofile simulations for plasma etching with surface passivation
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, No. 5. (1994), pp. 2745-2753.
    posted to plasma passivation introduction by these_morel on 2008-07-10 15:36:20 as **
  • Simulation of surface topography evolution during plasma etching by the method of characteristics
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 12, No. 3. (1994), pp. 620-635.
    by John C Arnold, Herbert H Sawin, Manoj Dalvie, Satoshi Hamaguchi
    posted to plasma passivation introduction by these_morel on 2008-07-10 15:35:13 as **
  • Study of sidewall passivation and microscopic silicon roughness phenomena in chlorine-based reactive ion etching of silicon trenches
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 6. (1990), pp. 1199-1211.
    by GS Oehrlein, JF Rembetski, EH Payne
    posted to plasma passivation introduction by these_morel on 2008-07-10 15:33:25 as **
  • X-ray photoelectron spectroscopy investigation of sidewall passivation films formed during gate etch processes
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 2. (2001), pp. 420-426.
    posted to plasma passivation introduction by these_morel on 2008-07-10 15:32:30 as **
  • Polysilicon gate etching in high density plasmas. V. Comparison between quantitative chemical analysis of photoresist and oxide masked polysilicon gates etched in HBr/Cl[sub 2]/O[sub 2] plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 15, No. 1. (1997), pp. 88-97.
    by FH Bell, O Joubert
    posted to plasma passivation introduction by these_morel on 2008-07-10 15:31:39 as **
  • Quantitative chemical topography of polycrystalline Si anisotropically etched in Cl[sub 2]/O[sub 2] high density plasmas
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 2. (1995), pp. 214-226.
    by KV Guinn, CC Cheng, VM Donnelly
    posted to plasma passivation introduction by these_morel on 2008-07-10 15:30:50 as **
  • A General Theory of the Plasma of an Arc
    Physical Review, Vol. 34, No. 6. (1929), 876.
    by Lewi Tonks, Irving Langmuir
    posted to plasma introduction by these_morel on 2008-07-03 15:06:45 as *
  • Device scaling limits of Si MOSFETs and their application dependencies
    Proceedings of the IEEE, Vol. 89, No. 3. (2001), pp. 259-288.
    by DJ Frank, RH Dennard, E Nowak, PM Solomon, Y Taur, Hon-Sum P Wong
    posted to tunneling microelectronics introduction by these_morel on 2008-05-15 13:27:43 as **
  • Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices
    Electron Device Letters, IEEE, Vol. 18, No. 12. (1997), pp. 580-582.
    by A Gupta, Peng Fang, M Song, Ming-Ren Lin, D Wollesen, K Chen, C Hu
    posted to polydepletion microelectronics introduction by these_morel on 2008-05-16 12:55:02 as **
  • VLSI Fabrication Principles: Silicon and Gallium Arsenide, 2nd Edition
    (14 March 1994)
    by Sorab K Ghandhi
    posted to volatility introduction by these_morel on 2008-07-18 10:44:54 as **
  • Polysilicon gate depletion effect on IC performance
    Solid-State Electronics, Vol. 38, No. 11. (November 1995), pp. 1975-1977.
    by Kai Chen, Mansun Chan, Ping K Ko, Chenming Hu, Jian-Hui Huang
    posted to polydepletion microelectronics introduction by these_morel on 2008-05-16 08:06:41 as **
  • Anomalous C-V characteristics of implanted polyMOS structure in n+/p+ dual-gate CMOS technology
    Electron Device Letters, IEEE, Vol. 10, No. 5. (1989), pp. 192-194.
    by CY Lu, JM Sung, HC Kirsch, SJ Hillenius, TE Smith, L Manchanda
    posted to polydepletion microelectronics introduction by these_morel on 2008-05-16 07:55:26 as **
  • Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 22, No. 1. (2004), pp. 53-60.
    by TEFM Standaert, C Hedlund, EA Joseph, GS Oehrlein, TJ Dalton
    posted to plasma introduction fluorocarbon by these_morel on 2008-07-08 06:56:38 as **
  • Fluorocarbon polymer deposition kinetics in a low-pressure, high-density, inductively coupled plasma reactor
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 18, No. 5. (2000), pp. 2122-2129.
    by MJ Sowa, ME Littau, V Pohray, JL Cecchi
    posted to plasma introduction fluorocarbon by these_morel on 2008-07-08 06:55:38 as **
  • The role of polymer deposited in differential dielectric etch
    The 42nd national symposium of the American Vacuum Society, Vol. 14, No. 3. (1996), pp. 1092-1095.
    by S Fang, C Chiang, D Fraser, B Lee, P Keswick, M Chang, K Fung
    posted to plasma introduction fluorocarbon by these_morel on 2008-07-08 06:54:36 as **
  • Theory of Auger Neutralization of Ions at the Surface of a Diamond-Type Semiconductor
    Physical Review, Vol. 122, No. 1. (1 April 1961), 83.
    by Homer D Hagstrum
    posted to plasma introduction by these_morel on 2008-07-08 06:51:12 as **
  • Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets
    Physical Review, Vol. 184, No. 2. (1969), 383.
    by Peter Sigmund
    posted to plasma introduction by these_morel on 2008-07-08 06:47:24 as **
  • Gate oxide scaling limits and projection
    Electron Devices Meeting, 1996., International (1996), pp. 319-322.
    by Chenming Hu
    posted to tunneling polydepletion microelectronics introduction eot by these_morel on 2008-05-15 15:45:00 as **
  • Control of relative etch rates of SiO2 and Si in plasma etching
    Solid-State Electronics, Vol. 18, No. 12. (December 1975), pp. 1146-1147.
    by Rudolf A Heinecke
    posted to plasma introduction by these_morel on 2008-07-04 09:35:31 as **
  • Gate length dependent polysilicon depletion effects
    Electron Device Letters, IEEE, Vol. 23, No. 4. (2002), pp. 224-226.
    by Chang-Hoon Choi, PR Chidambaram, R Khamankar, CF Machala, Zhiping Yu, RW Dutton
    posted to polydepletion microelectronics introduction by these_morel on 2008-05-15 15:35:15 as **
  • CMOS scaling into the nanometer regime
    Proceedings of the IEEE, Vol. 85, No. 4. (1997), pp. 486-504.
    by Yuan Taur, DA Buchanan, Wei Chen, DJ Frank, KE Ismail, Shih-Hsien Lo, GA Sai-Halasz, RG Viswanathan, HJC Wann, SJ Wind, Hon-Sum Wong
    posted to metal introduction gate capacitive by these_morel on 2008-05-20 10:04:37 as **
  • Reliable tantalum-gate fully-depleted-SOI MOSFET technology featuring low-temperature processing
    Electron Devices, IEEE Transactions on, Vol. 44, No. 9. (1997), pp. 1467-1472.
    by T Ushiki, Mo-Chiun Yu, Y Hirano, H Shimada, M Morita, T Ohmi
    posted to resistivity metal-gate metal introduction gate by these_morel on 2008-05-20 10:02:41 as **
  • The work function of the elements and its periodicity
    Journal of Applied Physics, Vol. 48, No. 11. (1977), pp. 4729-4733.
    by Herbert B Michaelson
    posted to work-function metal introduction gate by these_morel on 2008-05-20 13:59:25 as **
  • Physics of Semiconductor Devices
    (04 November 1981)
    by Simon M Sze
    posted to microelectronics introduction cmos by these_morel on 2008-07-10 13:28:17 as ** along with 1 person kristgy
  • The reaction of fluorine atoms with silicon
    Journal of Applied Physics, Vol. 52, No. 5. (1981), pp. 3633-3639.
    by Daniel L Flamm, Vincent M Donnelly, John A Mucha
    posted to plasma introduction by these_morel on 2008-07-04 09:08:59 as **
  • Insulated gate field effect transistor integrated circuits with silicon gates
    Electron Devices, IEEE Transactions on, Vol. 16, No. 2. (1969), pp. 236-236.
    by F Faggin, T Klein, L Vadasz
    posted to microelectronics introduction by these_morel on 2008-04-28 13:29:56 as read
  • Ion- and electron-assisted gas-surface chemistry---An important effect in plasma etching
    Journal of Applied Physics, Vol. 50, No. 5. (1979), pp. 3189-3196.
    by JW Coburn, Harold F Winters
    posted to plasma introduction by these_morel on 2008-07-03 15:57:45 as **
  • Plasma etching---A discussion of mechanisms
    Journal of Vacuum Science and Technology, Vol. 16, No. 2. (1979), pp. 391-403.
    by JW Coburn, Harold F Winters
    posted to plasma introduction by these_morel on 2008-07-03 15:55:00 as **
  • Nanometer scale linewidth control during etching of polysilicon gates in high-density plasmas
    Microelectronic Engineering, Vol. 69, No. 2-4. (September 2003), pp. 350-357.
    posted to resist-trimming introduction by these_morel on 2008-07-11 13:38:16 as **
  • Enhancement of the recombination rate of Br atoms by CF[sub 4] addition and resist etching in HBr/Cl[sub 2]/O[sub 2] plasmas
    Journal of Applied Physics, Vol. 94, No. 10. (2003), pp. 6285-6290.
    by G Cunge, O Joubert, N Sadeghi
    posted to introduction cleaning by these_morel on 2008-07-11 15:12:45 as **
  • Effect of chamber wall conditions on Cl and Cl[sub 2] concentrations in an inductively coupled plasma reactor
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 20, No. 1. (2002), pp. 43-52.
    by Saurabh J Ullal, Anna R Godfrey, Erik Edelberg, Linda Braly, Vahid Vahedi, Eray S Aydil
    posted to introduction cleaning by these_morel on 2008-07-11 15:11:51 as **
  • Resist trimming in high-density CF[sub 4]/O[sub 2] plasmas for sub-0.1 mu m device fabrication
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 5. (2002), pp. 1974-1981.
    by Chian Y Sin, Bing H Chen, WL Loh, J Yu, P Yelehanka, A See, L Chan
    posted to resist-trimming introduction by these_morel on 2008-07-11 13:35:35 as **
  • Dry etching for pattern transfer
    Journal of Vacuum Science and Technology, Vol. 17, No. 5. (1980), pp. 1177-1183.
    by HW Lehmann, R Widmer
    posted to plasma introduction etching by these_morel on 2008-07-09 10:18:03 as **
  • Energy dependence of the ion-induced sputtering yields of monatomic solids
    Atomic Data and Nuclear Data Tables, Vol. 31, No. 1. (July 1984), pp. 1-80.
    by Noriaki Matsunami, Yasunori Yamamura, Yukikazu Itikawa, Noriaki Itoh, Yukio Kazumata, Soji Miyagawa, Kenji Morita, Ryuichi Shimizu, Hiroyuki Tawara
    posted to plasma introduction by these_morel on 2008-07-04 13:35:27 as **
  • Deep-submicrometer MOS device fabrication using a photoresist-ashing technique
    Electron Device Letters, IEEE, Vol. 9, No. 4. (1988), pp. 186-188.
    by J Chung, M Jeng, JE Moon, AT Wu, TY Chan, PK Ko, C Hu
    posted to resist-trimming introduction by these_morel on 2008-07-11 13:24:20 as **
  • Introduction
    European Journal of English Studies, Vol. 9, No. 2. (August 2005), pp. 107-115.
    posted to introduction english by test_cite on 2007-01-22 15:08:51 as *****
  • Reinforcement Learning: An Introduction (Adaptive Computation and Machine Learning)
    (01 March 1998)
    by Richard S Sutton, Andrew G Barto
  • Social Network Analysis: A Handbook
    (02 May 2000)
    by John P Scott
    posted to introduction networks social by tanyabw on 2007-12-28 18:06:42 as read along with 1 person jyew
  • Component-Level Dataflow Analysis
    Component-Based Software Engineering, Vol. 3489 (2005), pp. 82-89.
    by Atanas Rountev
    posted to summary_analysis introduction by srccheck on 2008-04-23 12:11:35 as ****
  • Efficient context-sensitive pointer analysis for C programs
    SIGPLAN Not., Vol. 30, No. 6. (June 1995), pp. 1-12.
    by Robert P Wilson, Monica S Lam
    posted to summary_analysis introduction context_sensitive alias_analysis by srccheck on 2008-03-06 14:09:45 as read
  • Points-to analysis using BDDs
    SIGPLAN Not., Vol. 38, No. 5. (May 2003), pp. 103-114.
    by Marc Berndl, Ondrej Lhoták, Feng Qian, Laurie Hendren, Navindra Umanee
    posted to introduction bdd alias_analysis by srccheck on 2008-05-08 14:19:26 as **
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