Tag mbe [at least 200 articles] Export

Recent papers classified by the tag mbe.

	Advances in production MBE grown GaInP/GaAs cascade solar cells [My Copy] Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE (06 August 2002), pp. 1177-1180. by P. Leinonen, M. Pessa, J. Haapamaa, K. Rakennus posted to ssmbe solar photovoltaic phosphidembe mbe ingap by mllee on 2009-12-01 19:39:17 as
	Molecular beam epitaxy grown GaInP top cells and GaAs tunnel diodes for tandem applications [My Copy] Photovoltaic Specialists Conference, 1996., Conference Record of the Twenty Fifth IEEE (17 May 1996), pp. 97-100. by J. Lammasniemi, K. Tappura, R. Jaakkola, et al.A. Kazantsev, K. Rakennus, P. Uusimaa, M. Pessa posted to photovoltaic phosphidembe mbe ingap gsmbe doping by mllee on 2009-12-01 19:30:21 as
	GaInP/GaAs cascade solar cells grown by molecular beam epitaxy [My Copy] Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE (3 October 1997), pp. 823-826. by J. Lammasniemi, A. B. Kazantsev, R. Jaakkola, et al.M. Toivonen, M. Jalonen, R. Aho, M. Pessa posted to ssmbe phosphidembe mbe ingap gsmbe doping by mllee on 2009-12-01 19:17:01 as
	GaN:Eu electroluminescent devices grown by interrupted growth epitaxy [My Copy] Thin Solid Films, Vol. 496, No. 2. (21 February 2006), pp. 636-642. by C. Munasinghe, A. Steckl posted to mbe gan by Nitrides-TL-NTU on 2009-11-12 10:40:41 as
	A comparative study of surface reconstruction of wurtzite GaN on (0001) sapphire by RF plasma-assisted molecular beam epitaxy [My Copy] Journal of Crystal Growth, Vol. 231, No. 1-2. (September 2001), pp. 8-16. by K. Lee posted to sapphire mbe gan by Nitrides-TL-NTU on 2009-11-12 03:06:18 as
	Formation of self-assembled InGaAs quantum dot arrays aligned along quasiperiodic multiatomic steps on vicinal (111)B GaAs [My Copy] Applied Physics Letters, Vol. 89, No. 18. (2006), 183108. by Y. Akiyama, H. Sakaki posted to quantumdot mbe ingaas 111b by mllee on 2009-10-30 19:49:51 as
	Segregated AlGaAs(110) grown by molecular beam epitaxy [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 4, No. 2. (1986), pp. 517-518. by W. I. Wang, T. S. Kuan, J. C. Tsang, L. L. Chang, L. Esaki posted to phaseseparation ordering mbe gaas algaas 110 by mllee on 2009-10-25 17:07:02 as
	Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates [My Copy] Japanese Journal of Applied Physics, Vol. 26, No. Part 2, No. 4. (20 April 1987), pp. L302-L305. by Toshiro Hayakawa, Masafumi Kondo, Takahiro Suyama, Kosei Takahashi, Saburo Yamamoto, Toshiki Hijikata posted to mbe laser 111b by mllee on 2009-10-25 17:02:55 as
	Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001) [My Copy] Applied Physics Letters, Vol. 73, No. 20. (1998), pp. 2932-2934. by J. Brault, M. Gendry, G. Grenet, G. Hollinger, Y. Desières, T. Benyattou posted to quantumdash mbe inp inas by mllee on 2009-10-18 21:29:19 as
	Epitaxial growth of MgO and Fe/MgO/Fe magnetic tunnel junctions on (100)-Si by molecular beam epitaxy [My Copy] Applied Physics Letters, Vol. 93, No. 14. (2008), 142511. by G. X. Miao, J. Y. Chang, M. J. van Veenhuizen, et al.K. Thiel, M. Seibt, G. Eilers, M. Münzenberg, J. S. Moodera posted to tmr si mtj mgo mbe epitaxial by kken on 2009-10-18 11:07:28 as
	Conductive atomic force microscopy study of InAs growth kinetics on vicinal GaAs (110) [My Copy] Applied Physics Letters, Vol. 95, No. 12. (2009), 123103. by Paloma Tejedor, Laura D. Merino, Igor Beinik, Christian Teichert posted to mbe inas gaas 110 by mllee on 2009-10-15 02:06:29 as
	Low dislocation density GaAs on Si heteroepitaxy with atomic hydrogen irradiation for optoelectronic integration [My Copy] Journal of Applied Physics, Vol. 73, No. 11. (1993), pp. 7376-7384. by Yoshitaka Okada, Hirofumi Shimomura, Mitsuo Kawabe posted to mbe gaasonsi atomic_hydrogen by mllee on 2009-10-06 02:46:57 as
	Spin Relaxation in GaAs(110) Quantum Wells [My Copy] Physical Review Letters, Vol. 83, No. 20. (15 Nov 1999), pp. 4196-4199. by Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, H. Ohno posted to mbe gaas 110 by mllee on 2009-10-06 02:21:39 as along with 1 person citemaster
	Temperature dependence of excitonic properties of (111)B InGaAs/GaAs piezoelectric and pyroelectric multiquantum wells [My Copy] Journal of Applied Physics, Vol. 106, No. 2. (2009), 023527. by Soohaeng Cho, A. Majerfeld posted to pyroelectric piezoelectric mbe ingaas gaas 111b by mllee on 2009-10-05 01:46:19 as
	Conduction-band engineering in piezoelectric [111] multiple quantum well p-i-n photodiodes [My Copy] Applied Physics Letters, Vol. 65, No. 17. (1994), pp. 2214-2216. by J. L. Sánchez Rojas, A. Sacedón, F. Calle, E. Calleja, E. Mu Noz posted to mbe ingaas gaas 111b by mllee on 2009-10-05 01:31:07 as
	Graphitic carbon growth on Si(111) using solid source molecular beam epitaxy [My Copy] Applied Physics Letters, Vol. 95, No. 13. (2009), 133114. by J. Hackley, D. Ali, J. DiPasquale, J. D. Demaree, C. J. K. Richardson posted to mbe graphene by mllee on 2009-10-02 01:30:03 as
	Low-temperature homoepitaxial growth on Si(111) through a Pb monolayer [My Copy] Applied Physics Letters, Vol. 73, No. 21. (1998), pp. 3120-3122. by P. G. Evans, O. D. Dubon, J. F. Chervinsky, F. Spaepen, J. A. Golovchenko posted to surfactants si111 pb mbe epitaxial by kken on 2009-09-24 00:06:58 as
	Surfactants in Si(111) homoepitaxy [My Copy] Applied Physics Letters, Vol. 66, No. 4. (1995), pp. 487-489. by M. Horn von Hoegen, J. Falta, M. Copel, R. M. Tromp posted to surfactants si111 sb mbe ga epitaxial as by kken on 2009-09-23 23:28:15 as
	Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pb monolayer [My Copy] Applied Physics Letters, Vol. 78, No. 11. (2001), pp. 1505-1507. by O. D. Dubon, P. G. Evans, J. F. Chervinsky, et al.M. J. Aziz, F. Spaepen, J. A. Golovchenko, M. F. Chisholm, D. A. Muller posted to si111 si pb mbe as by kken on 2009-09-17 03:02:05 as
	Epitaxial ferromagnetic Fe[sub 3]Si/Si(111) structures with high-quality heterointerfaces [My Copy] Applied Physics Letters, Vol. 93, No. 13. (2008), 132117. by K. Hamaya, K. Ueda, Y. Kishi, Y. Ando, T. Sadoh, M. Miyao posted to spininjection si111 si mbe fe3si epitaxial by kken on 2009-09-16 07:32:32 as
	Electrical injection and detection of spin-polarized electrons in silicon through an Fe[sub 3]Si/Si Schottky tunnel barrier [My Copy] Applied Physics Letters, Vol. 94, No. 18. (2009), 182105. by Y. Ando, K. Hamaya, K. Kasahara, et al.Y. Kishi, K. Ueda, K. Sawano, T. Sadoh, M. Miyao posted to spininjection si sb mbe heusler fe3si by kken on 2009-09-16 06:58:24 as
	Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE [My Copy] Journal of The Electrochemical Society, Vol. 133, No. 4. (1986), pp. 666-671. by Akitoshi Ishizaka, Yasuhiro Shiraki posted to si mbe by kken on 2009-09-12 12:57:53 as
	Electronic structure of GaN(0001)-2 × 2 thin films grown by PAMBE [My Copy] physica status solidi (RRL) - Rapid Research Letters, Vol. 2, No. 5. (2008), pp. 212-214. by R. Gutt, P. Lorenz, K. Tonisch, M. Himmerlich, J. A. Schaefer, S. Krischok posted to mbe by Nitrides-TL-NTU on 2009-08-21 08:04:14 as
	Surface reconstructions on GaAs(001) [My Copy] Surface Science Reports, Vol. 63, No. 7. (15 July 2008), pp. 295-327. by A. Ohtake posted to rheed review mbe gaas by mllee on 2009-08-18 21:29:37 as along with 1 person opocus
	Semiconductor Surface Roughness: Dependence on Sign and Magnitude of Bulk Strain [My Copy] Physical Review Letters, Vol. 73, No. 22. (Nov 1994), pp. 3006-3009. by Y. H. Xie, G. H. Gilmer, C. Roland, et al.P. J. Silverman, S. K. Buratto, J. Y. Cheng, E. A. Fitzgerald, A. R. Kortan, S. Schuppler, M. A. Marcus, P. H. Citrin posted to tensileqd strain quantumdot mbe by mllee on 2009-08-18 15:45:26 as
	Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions [My Copy] Nat Mater, Vol. 3, No. 12. (December 2004), pp. 868-871. by Shinji Yuasa, Taro Nagahama, Akio Fukushima, Yoshishige Suzuki, Koji Ando posted to tmr outputvoltage mtj mgo mbe journal irmn fe epitaxial by kken on 2009-08-17 10:05:57 as along with 1 person taro
	Molecular beam epitaxy: from research to manufacturing [My Copy] Thin Solid Films, Vol. 306, No. 2. (11 September 1997), pp. 331-337. by M. Henini posted to mbe by Nitrides-TL-NTU on 2009-08-17 08:43:11 as
	MBE grown AlGaN/GaN MODFETs with high breakdown voltage [My Copy] Journal of Crystal Growth, Vol. 201-202, No. 3. (May 1999), pp. 327-331. by A. Vescan posted to mbe by Nitrides-TL-NTU on 2009-08-17 08:04:40 as
	Nanometer-scale measurements of electronic states in InAs/GaAs quantum dots [My Copy] Journal of Applied Physics, Vol. 106, No. 1. (2009), 014315. by V. D. Dasika, R. S. Goldman, J. D. Song, W. J. Choi, N. K. Cho, J. I. Lee posted to stm quantumdot mbe by mllee on 2009-08-14 14:07:58 as along with 1 person opocus
	Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates [My Copy] Journal of Crystal Growth, Vol. 311, No. 7. (15 March 2009), pp. 2049-2053. by X. Q. Shen, M. Shimizu, H. Okumura, F. J. Xu, B. Shen, G. Y. Zhang posted to mbe mocvd by Nitrides-TL-NTU on 2009-08-07 02:41:20 as
	Self-forming InAs/GaP quantum dots by direct island growth [My Copy] Applied Physics Letters, Vol. 72, No. 11. (1998), pp. 1356-1358. by R. Leon, C. Lobo, T. P. Chin, et al.J. M. Woodall, S. Fafard, S. Ruvimov, Z. Liliental Weber, M. A. Stevens Kalceff posted to gap inas mbe quantumdot by mllee on 2009-07-26 00:45:23 as
	Effect of substrate temperature on composition ratio x in molecular-beam-epitaxial GaAs[sub 1 - x]P[sub x] [My Copy] Journal of Applied Physics, Vol. 47, No. 9. (1976), pp. 4198-4200. by Shun I. Gonda, Yuichi Matsushima posted to gaasp mbe nsfcareer by mllee on 2009-07-21 16:10:44 as
	Comparison of gain in group-III-nitride laser structures grown by metalorganic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates [My Copy] Semiconductor Science and Technology, Vol. 22, No. 7. (July 2007), pp. 736-741. by T. Swietlik, G. Franssen, C. Skierbiszewski, et al.R. Czernecki, P. Wisniewski, M. Krysko, M. Leszczynski, I. Grzegory, P. Mensz, S. Jursenas, T. Suski, P. Perlin posted to mbe mocvd by Nitrides-TL-NTU on 2009-07-15 10:46:43 as
	Epitaxial growth of high-κ oxides on silicon☆ [My Copy] Thin Solid Films, Vol. 517, No. 1. (03 November 2008), pp. 197-200. by C. Merckling, G. Saintgirons, G. Delhaye, et al.G. Patriarche, L. Largeau, V. Favrenicollin, M. Elkazzi, P. Regreny, B. Vilquin, O. Marty posted to al2o3 gd2o3 high-k mbe si sto by kken on 2009-07-14 17:14:31 as
	Tunnel magnetoresistance for magnetic tunnel junctions with Co[sub 2]FeAl[sub 0.5]Si[sub 0.5] full Heusler electrodes fabricated by molecular beam epitaxy system [My Copy] PROCEEDINGS OF THE 53RD ANNUAL CONFERENCE ON MAGNETISM AND MAGNETIC MATERIALS, Vol. 105, No. 7. (2009), 07C925. by N. Tezuka, N. Ikeda, F. Mitsuhashi, S. Sugimoto posted to cfas heusler mbe mtj tmr by kken on 2009-07-14 14:43:59 as
	Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co[sub 2]FeAl[sub 0.5]Si[sub 0.5] electrodes fabricated by molecular beam epitaxy [My Copy] Applied Physics Letters, Vol. 94, No. 16. (2009), 162504. by N. Tezuka, N. Ikeda, F. Mitsuhashi, S. Sugimoto posted to cfas mbe mtj tmr by kken on 2009-07-14 14:39:04 as
	High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates [My Copy] Applied Physics Letters, Vol. 73, No. 21. (1998), pp. 3111-3113. by R. M. Sieg, J. A. Carlin, J. J. Boeckl, et al.S. A. Ringel, M. T. Currie, S. M. Ting, T. A. Langdo, G. Taraschi, E. A. Fitzgerald, B. M. Keyes posted to gaas mbe photovoltaic solar trpl by mllee on 2009-07-06 01:15:18 as
	Impact of annealing and V:III ratio on properties of MBE grown wide-bandgap AlGaInP materials and solar cells [My Copy] Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE In Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE (2005), pp. 711-714. by M. Lueck, M. Gonzalez, Ojin Kwon, C. Andre, S. A. Ringel posted to dlts ingap mbe by mllee on 2009-07-02 20:34:31 as
	Effects of GaAs substrate misorientation on strain relaxation in In[sub x]Ga[sub 1 - x]As films and multilayers [My Copy] Journal of Applied Physics, Vol. 83, No. 10. (1998), pp. 5137-5149. by R. S. Goldman, K. L. Kavanagh, H. H. Wieder, S. N. Ehrlich, R. M. Feenstra posted to alphabetadislocation dislocation mbe strainrelaxation by mllee on 2009-06-18 21:32:51 as
	A study of the doping influence on strain relaxation of graded composition InGaAs layers grown by molecular beam epitaxy [My Copy] Journal of Crystal Growth, Vol. 311, No. 7. (15 March 2009), pp. 1684-1687. by I. Tångring, Y. X. Song, Z. H. Lai, S. M. Wang, M. Sadeghi, A. Larsson posted to doping ingaas mbe strainrelaxation by mllee on 2009-06-16 21:21:17 as
	Reflection high energy electron diffraction characteristic absences in GaAs(100) (2 x 4)--As: A tool for determining the surface stoichiometry [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 8, No. 4. (1990), pp. 903-907. by H. H. Farrell, Palmstro posted to gaas mbe rheed by mllee on 2009-06-15 20:55:52 as
	Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy [My Copy] Applied Physics Letters, Vol. 94, No. 23. (2009), 232106. by T. J. Grassman, M. R. Brenner, S. Rajagopalan, et al.R. Unocic, R. Dehoff, M. Mills, H. Fraser, S. A. Ringel posted to gapsi mbe by mllee on 2009-06-11 18:39:31 as
	Surface structure of (100) GaP grown by gas source molecular beam epitaxy [My Copy] Applied Physics Letters, Vol. 56, No. 22. (1990), pp. 2201-2203. by J. N. Baillargeon, K. Y. Cheng, K. C. Hsieh posted to gap gsmbe mbe rheed by mllee on 2009-06-11 14:38:32 as
	The gas source molecular beam epitaxial growth of Al[sub x]Ga[sub 1 - x]P on (100) GaP [My Copy] Journal of Applied Physics, Vol. 68, No. 5. (1990), pp. 2133-2139. by J. N. Baillargeon, K. Y. Cheng, K. C. Hsieh, G. E. Stillman posted to gap gsmbe mbe rheed by mllee on 2009-06-11 14:10:30 as
	GaAs, GaP, and GaAs[sub x]P[sub 1 - x] Epitaxial Films Grown by Molecular Beam Deposition [My Copy] Journal of Vacuum Science and Technology, Vol. 6, No. 4. (1969), pp. 545-548. by J. R. Arthur, J. J. Lepore posted to gaasp mbe by mllee on 2009-06-10 23:07:48 as
	In situ determination of phosphorus composition in GaAs[sub 1 - x]P[sub x] grown by gas-source molecular beam epitaxy [My Copy] Applied Physics Letters, Vol. 59, No. 3. (1991), pp. 292-294. by H. Q. Hou, B. W. Liang, T. P. Chin, C. W. Tu posted to gaasp gsmbe mbe by mllee on 2009-06-10 23:01:34 as
	A kinetic model for As and P incorporation behaviors in GaAsP grown by gas-source molecular beam epitaxy [My Copy] Journal of Applied Physics, Vol. 74, No. 1. (1993), pp. 255-259. by B. W. Liang, C. W. Tu posted to gaasp gsmbe mbe by mllee on 2009-06-10 22:55:43 as
	Strain and As species dependent group V incorporation in GaAsP during gas source molecular beam epitaxy [My Copy] Journal of Crystal Growth, Vol. 136, No. 1-4. (1 March 1994), pp. 282-286. by J. Cunningham posted to gaasp gsmbe mbe by mllee on 2009-06-10 22:44:37 as
	Non-linear As(P) incorporation in GaAs1$minus;yPy on GaAs and InAs1$minus;yPy on InP [My Copy] Journal of Crystal Growth, Vol. 150 (May 1995), pp. 492-496. by J. Cunningham posted to gaasp gsmbe mbe by mllee on 2009-06-10 22:40:29 as
	Growth kinetics and in situ composition determination of mixed-group-V compounds grown by gas-source molelcular beam epitaxy [My Copy] Journal of Crystal Growth, Vol. 127, No. 1-4. (2 February 1993), pp. 251-254. by C. Tu posted to gaasp gsmbe mbe by mllee on 2009-06-10 22:35:14 as

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gan	96
si	31
gaas	29
quantumdot	19
111b	18
ingaas	17
inas	14
on	13
gaasp	12
metamorphic	12
ingaasn	11
rheed	11
gapsi	10
gsmbe	9
ammonia	8
gaasn	8
laser	8
pl	8
doping	7
phaseseparation	7
sapphire	7
110	6
ingap	6
mocvd	6
offcut	6
phosphidembe	6
photovoltaic	6
strainrelaxation	6
111a	5
anneal	5
epitaxial	5
mixedanion	5
sic	5
solar	5
211	4
algaas	4
inalas	4
investigacion	4
mtj	4
si111	4
ssmbe	4
stm	4
tmr	4
apd	3
beam	3
epitaxy	3
gap	3
inp	3
mgo	3
molecular	3
phosphide	3
pointdefect	3
qd	3
qw	3
technique	3
tem	3
112a	2
112b	2
as	2
bismuth	2
bragg	2
cfas	2
cirugia	2
defects	2
dfb	2
diffraction	2
dlts	2
efficiency	2
fe3si	2
gaas-substrate	2
gaasonge	2
gaasonsi	2
gainnassb	2
heusler	2
iii-nitride	2
innanticorrelation	2
mee	2
mnas	2
movpe	2
nanorods	2
nsfcareer	2
pb	2
pbsalt	2
pbse	2
pbte	2
rare-earth	2
reflectivity	2
reflector	2
review	2
sb	2
sims	2
spininjection	2
spintronics	2
stackingfaults	2
stranski-krastanov	2
surfactant	2
surfactants	2
xrd	2
pa-mbe	1
substrate	1

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