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Tag metal-gate [7 articles]

Recent papers classified by the tag metal-gate.
  • Single Metal Gate on High-k Gate Stacks for 45nm Low Power CMOS
    Electron Devices Meeting, 2006. IEDM '06. International (2006), pp. 1-4.
    by WJ Taylor, C Capasso, B Min, B Winstead, E Verret, K Loiko, D Gilmer, RI Hegde, J Schaeffer, J Schaeffer, E Luckowski, A10, A Martinez, A11, M Raymond, A12, C Happ, A13, DH Triyoso, A14, S Kalpat, A15, A Haggag, A16, D Roan, A17, JY Nguyen, A18, LB La, A19, L Hebert, A20, J Smith, A21, D Jovanovic, A22, D Burnett, A23, M Foisy, A24, N Cave, A25, PJ Tobin, A26, SB Samavedam, A27, Jr, A28, S Venkatesan, A29
    posted to tac metal-gate high-k hfo2 by these_morel on 2008-05-21 07:12:22 as **
  • Development of plasma etching process for sub-50 nm TaN gate
    Thin Solid Films, Vol. 504, No. 1-2. (10 May 2006), pp. 140-144.
    by Vladimir Bliznetsov, Rakesh Kumar, Lakshmi K Bera, Loh W Yip, Anyan Du, Tang E Hui
    posted to tan midgap metal-gate by these_morel on 2008-05-21 07:32:57 as **
  • Physical and electrical properties of Ta--N, Mo--N, and W--N electrodes on HfO[sub 2] high-k gate dielectric
    Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 24, No. 1. (2006), pp. 349-357.
    by Jiang Lu, Yue Kuo, Somenath Chatterjee, Jun Y Tewg
    posted to tungsten-nitride tan molybdenum metal-gate high-k by these_morel on 2008-05-21 07:08:55 as **
  • Molybdenum metal gate MOS technology for post-SiO<sub>2</sub> gate dielectrics
    Electron Devices Meeting, 2000. IEDM Technical Digest. International (2000), pp. 641-644.
    by Qiang Lu, R Lin, P Ranade, Yee C Yeo, Xiaofan Meng, H Takeuchi, Tsu-Jae King, Chenming Hu, Hongfa Luan, Hongfa Luan, Songjoo Lee, A10, Weiping Bai, A11, Choong-Ho Lee, A12, Dim-Lee Kwong, A13, Xin Guo, A14, Xiewen Wang, A15, Tso-Ping Ma, A16
    posted to nitrogen molybdenum metal-gate dual-metal-gate by these_morel on 2008-05-21 12:01:46 as **
  • notes Implementation of high-k and metal gate materials for the 45 nm node and beyond: gate patterning development
    Microelectronics and Reliability, Vol. 45, No. 5-6. ( 2005), pp. 1007-1011.
    by S Beckx, M Demand, S Locorotondo, K Henson, M Claes, V Paraschiv, D Shamiryan, P Jaenen, W Boullart, S Degendt
    posted to hfo2 metal-gate poly-si ruthenium tan tin by these_morel on 2006-02-17 15:34:25 as read along with 1 group LTM_LETI_etching
  • Reliable tantalum-gate fully-depleted-SOI MOSFET technology featuring low-temperature processing
    Electron Devices, IEEE Transactions on, Vol. 44, No. 9. (1997), pp. 1467-1472.
    by T Ushiki, Mo-Chiun Yu, Y Hirano, H Shimada, M Morita, T Ohmi
    posted to resistivity metal-gate metal introduction gate by these_morel on 2008-05-20 10:02:41 as **
  • High-/spl kappa//metal-gate stack and its MOSFET characteristics
    Electron Device Letters, IEEE, Vol. 25, No. 6. (2004), pp. 408-410.
    by R Chau, S Datta, M Doczy, B Doyle, J Kavalieros, M Metz
    posted to high-k metal-gate by Stanley_vrc on 2006-12-01 15:13:25 as ***
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