Tag rie [19 articles] Export

Recent papers classified by the tag rie.

	Deep reactive ion etching as a tool for nanostructure fabrication [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 27, No. 3. (2009), 1520. by Y. Q. Fu, A. Colli, A. Fasoli, et al.J. K. Luo, A. J. Flewitt, A. C. Ferrari, W. I. Milne posted to fabrication rie by akhuettel on 2009-06-08 12:38:43 as
	Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment [My Copy] Journal of Micromechanics and Microengineering, Vol. 19, No. 3. (2009), 033001. by H. V. Jansen, De M. J. Boer, S. Unnikrishnan, M. C. Louwerse, M. C. Elwenspoek posted to drie rie by z3phyr on 2009-02-26 19:52:08 as
	High-density plasma patterning of low dielectric constant polymers: A comparison between polytetrafluoroethylene, parylene-N, and poly(arylene ether) [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 19, No. 2. (2001), pp. 435-446. by T. E. F. M. Standaert, P. J. Matsuo, X. Li, et al.G. S. Oehrlein, T. M. Lu, R. Gutmann, C. T. Rosenmayer, J. W. Bartz, J. G. Langan, W. R. Entley posted to parylene plasma rie by z3phyr on 2008-08-21 17:51:04 as
	Dry process technology (reactive ion etching) [My Copy] Journal of Vacuum Science and Technology, Vol. 13, No. 5. (1976), pp. 1023-1029. by James A. Bondur posted to dry-etching etching rie technology by mawulf on 2007-08-15 11:22:53 as
	Surface modification and etch product detection during reactive ion etching of InP in - plasma [My Copy] Plasma Sources Science and Technology, Vol. 6, No. 3. (9 May 1997), pp. 334-342. by Y. Feurprier, Ch Cardinaud, G. Turban posted to etching rie by mawulf on 2007-07-30 10:09:42 as
	Dry Etching of Photonic Crystals in InP Based Materials [My Copy] Physica Scripta Volume T, Vol. 101 (2002), pp. 106-109. by M. Mulot, S. Anand, C. F. Carlström, M. Swillo, A. Talneau posted to dry-etching photonic-crystals rie by mawulf on 2007-07-24 08:48:23 as
	A low damage RIE process for the fabrication of compound semiconductor based transistors with sub-100 nm tungsten gates [My Copy] Microelectronic Engineering In Micro- and Nano-Engineering MNE 2005, Vol. 83, No. 4-9. ( 2006), pp. 1159-1162. by X. Li, X. Cao, H. Zhou, et al.C. D. W. Wilkinson, S. Thoms, D. Macintyre, M. Holland, I. G. Thayne posted to etching rie sf6-chf3 sf6-n2 sf6-o2 tungsten by these_morel on 2006-06-19 09:36:54 as along with 1 person Stanley_vrc
	Tungsten etching mechanisms in CF[sub 4]/O[sub 2] reactive ion etching plasmas [My Copy] Journal of Applied Physics, Vol. 66, No. 10. (1989), pp. 5034-5038. by Tim D. Bestwick, Gottlieb S. Oehrlein posted to cf4-o2 rie tungsten xps by these_morel on 2006-05-12 09:49:54 as along with 1 person Stanley_vrc
	Formation of polymeric layers using halogen-carbon plasmas [My Copy] Vacuum, Vol. 68, No. 3. (20 November 2002), pp. 239-244. by Z. Rutkuniene, A. Grigonis posted to cf4 polymer_layer rie by these_morel on 2006-04-05 11:37:28 as
	Effect of CO and CO[sub 2] addition to the CF[sub 4]/O[sub 2] gas system on the etching of a low-pressure chemical vapor deposition tungsten film [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 3. (1995), pp. 914-917. by Sung K. Kwon, Kyung N. Kim, Chul W. Nam, Seong I. Woo posted to cf4-o2 co co2 etching plasmas rie tungsten by these_morel on 2006-03-03 12:35:35 as
	Reactive ion etching of a 20 nanometers tungsten gate using a SF[sub 6]/N[sub 2] chemistry and hydrogen silsesquioxane hard mask resist [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 5. (2005), pp. 2046-2050. by Guilhem Larrieu, Emmanuel Dubois posted to rie sf6-n2 tungsten by these_morel on 2006-02-28 15:15:26 as
	Study of the impact of the time-delay effect on the critical dimension of a tungsten silicide/polysilicon gate after reactive ion etching [My Copy] The 46th international symposium of the american vacuum society, Vol. 18, No. 4. (2000), pp. 1173-1175. by Shih P. Lin, Chen H. Ou, Szetsen Lee, Yu C. Tien, Chin F. Hsu posted to hbr-cl2-o2 poly-si rie time-delay-effect wsix by these_morel on 2006-02-28 15:09:27 as
	Control of etching-product-dependent shape and selectivity in gate polysilicon reactive ion etching [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 3. (1998), pp. 1038-1042. by Masaaki Sato, Yoshinobu Arita posted to cl2-o2 etching notching plasma poly-si rie selectivity sio2 by these_morel on 2006-02-28 15:04:44 as
	Tapered etching of aluminum with CHF[sub 3]/Cl[sub 2]/BCl[sub 3] and its impact on step coverage of plasma-deposited silicon oxide from tetraethoxysilane [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 9, No. 5. (1991), pp. 2530-2535. by N. Selamoglu, C. N. Bredbenner, T. A. Giniecki, H. J. Stocker posted to aluminium angle chf3-cl2-bcl3 plasma rie taper by these_morel on 2006-02-28 15:00:10 as
	Reactive-ion etching of tungsten silicide using NF[sub 3] gas mixtures [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 9, No. 6. (1991), pp. 2747-2751. by Ru L. Lee, Jr posted to chf3 nf3-h2 nf3-he plasmas rie wsix by these_morel on 2006-02-28 14:57:39 as
	The investigation of mixed halogen freon/oxygen tungsten reactive ion etching chemistries with extension to silicon [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 7, No. 2. (1989), pp. 167-174. by T. H. Daubenspeck, E. J. White, P. C. Sukanek posted to cf3-cl cf4-o2 plasma rie tungsten by these_morel on 2006-02-28 14:52:40 as
	Competitive reactions of fluorine and oxygen with W, WSi[sub 2], and Si surfaces in reactive ion etching using CF[sub 4]/O[sub 2] [My Copy] Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 7, No. 3. (1989), pp. 1035-1041. by Gottlieb S. Oehrlein, Lennart J. Lindstom posted to cf4-o2 etching plasma rie tungsten wsi by these_morel on 2006-02-28 14:50:12 as
	Selective reactive ion etching of tungsten films in CHF[sub 3] and other fluorinated gases [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 6, No. 4. (1988), pp. 1073-1080. by W. S. Pan, A. J. Steckl posted to cbrf3 cf4 chf3 plasma rie sf6 tungsten by these_morel on 2006-02-28 14:43:21 as
	Study of Conditions for Anisotropic Plasma Etching of Tungsten and Tungsten Nitride Using SF[sub 6]/Ar Gas Mixtures [My Copy] Journal of The Electrochemical Society, Vol. 149, No. 3. (2002), pp. G179-G183. by Reyes C. Betanzo, S. A. Moshkalyov, A. C. Ramos, J. A. Diniz, J. W. Swart posted to rie sf6-ar tungsten-nitride by these_morel on 2006-02-17 14:10:08 as

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etching	8
tungsten	7
plasma	6
cf4-o2	4
drie	3
anisotropic_etching	2
bosch_process	2
cf4	2
chf3	2
dry-etching	2
icp	2
plasmas	2
poly-si	2
sf6-n2	2
wsix	2
aluminium	1
angle	1
bosch	1
cbrf3	1
cf3-cl	1
chf3-cl2-bcl3	1
cl2-o2	1
co	1
co2	1
fabrication	1
hbr-cl2-o2	1
nf3-h2	1
nf3-he	1
notching	1
parylene	1
photonic-crystals	1
polymer_layer	1
quartz	1
selectivity	1
sf6	1
sf6-ar	1
sf6-chf3	1
sf6-o2	1
silicon	1
sio2	1
taper	1
technology	1
time-delay-effect	1
tungsten-nitride	1
wsi	1
xps	1

Tag rie [19 articles] Export

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