Tag schottky [162 articles] Export

Recent papers classified by the tag schottky.

	Image Charge and Dipole Combination Model for the Schottky Barrier Tuning at the Dopant Segregated Metal/Semiconductor Interface [My Copy] Electron Device Letters, IEEE, Vol. 30, No. 9. (31 July 2009), pp. 963-965. by Y. Nishi, Li Geng, B. Magyari-Kope posted to schottky by valurg on 2009-11-02 16:16:58 as
	Theory of resonant tunneling in a variably spaced multiquantum well structure: An Airy function approach [My Copy] Journal of Applied Physics, Vol. 61, No. 2. (1987), pp. 614-623. by K. F. Brennan, C. J. Summers posted to theory schottky by valurg on 2009-10-30 12:05:36 as
	Carrier transport across metal-semiconductor barriers☆ [My Copy] Solid-State Electronics, Vol. 13, No. 6. (June 1970), pp. 727-740. by C. Chang, S. Sze posted to schottky by valurg on 2009-10-26 18:08:42 as
	Some comments on the determination and interpretation of barrier heights of metal–semiconductor contacts [My Copy] Applied Physics A: Materials Science & Processing, Vol. 87, No. 3. (1 June 2007), pp. 359-366. by W. Mönch posted to schottky by valurg on 2009-10-24 13:29:12 as
	First-Principles Study of the Effects of Interface Structure on the Schottky Barrier Height of the Al-GaAs(110) Interface [My Copy] EPL (Europhysics Letters), Vol. 25, No. 1. (1994), pp. 31-36. by R. J. Needs, J. P. A. Charlesworth, R. W. Godby posted to schottky by valurg on 2009-10-22 16:03:16 as
	Schottky barriers at $NiSi2$/Si(111) interfaces [My Copy] Physical Review B, Vol. 42, No. 3. (Jul 1990), pp. 1696-1704. by Hideaki Fujitani, Setsuro Asano posted to theory schottky by valurg on 2009-10-19 14:17:20 as
	Investigations on the physical limitation and electrostatic improvement of a gate-all-around silicon nanowire transistor with Schottky barrier source/drain [My Copy] Semiconductor Science and Technology, Vol. 24, No. 10. (2009), 105001. by Zhaoyi Kang, Liangliang Zhang, Runsheng Wang, Ru Huang posted to schottky by valurg on 2009-10-16 15:07:24 as
	Dopant-Segregated Schottky Source/Drain Double-Gate MOSFET Design in the Direct Source-to-Drain Tunneling Regime [My Copy] Electron Devices, IEEE Transactions on, Vol. 56, No. 9. (28 July 2009), pp. 2016-2026. by R. A. Vega, K. Liu, Tsu-Jae K. Liu posted to schottky by valurg on 2009-10-16 14:59:18 as
	The Image and Van der Waals Forces at a Metallic Surface [My Copy] Physical Review, Vol. 58, No. 8. (October 1940), pp. 727-736. by J. Bardeen posted to theory schottky by valurg on 2009-08-27 14:33:57 as
	Dopant-Segregated Schottky Silicon-Nanowire MOSFETs With Gate-All-Around Channels [My Copy] Electron Device Letters, IEEE In Electron Device Letters, IEEE, Vol. 30, No. 8. (2009), pp. 843-845. by Y. K. Chin, K. L. Pey, N. Singh, et al.G. Q. Lo, K. H. Tan, C. Y. Ong, L. H. Tan posted to schottky by valurg on 2009-08-10 12:40:15 as
	Metal−Carbon Nanotube Contacts: The Link between Schottky Barrier and Chemical Bonding [My Copy] Journal of the American Chemical Society, Vol. 130, No. 18. (1 May 2008), pp. 5848-5849. by Vincenzo Vitale, Alessandro Curioni, Wanda Andreoni posted to al bonding chemical cnt contact metal pd schottky by leonhardmayrhofer on 2009-07-30 15:47:50 as
	Cohesion in alloys — fundamentals of a semi-empirical model [My Copy] Physica B+C, Vol. 100, No. 1. (April 1980), pp. 1-28. by A. Miedema posted to schottky theory by valurg on 2009-07-14 11:06:46 as
	Role of virtual gap states and defects in metal-semiconductor contacts [My Copy] Physical Review Letters, Vol. 58 (Mar 1987), pp. 1260-1263. by W. Mönch posted to schottky by valurg on 2009-07-10 15:54:57 as
	On the physics of metal-semiconductor interfaces [My Copy] Reports on Progress in Physics, Vol. 53, No. 3. (1990), pp. 221-278. by W. Monch posted to schottky by valurg on 2009-07-10 15:50:27 as
	Theory of semiconductor surface states and metal--semiconductor interfaces [My Copy] Journal of Vacuum Science and Technology, Vol. 13, No. 4. (1976), pp. 790-797. by Steven G. Louie, James R. Chelikowsky, Marvin L. Cohen posted to schottky theory by valurg on 2009-07-09 15:26:12 as
	Metal-semiconductor surface barriers1 [My Copy] Solid-State Electronics*, Vol. 9, No. 11-12. (November 1966), pp. 1023-1033. by C. Mead posted to schottky by valurg on 2009-07-09 15:23:24 as
	Fermi Level Unpinning and Schottky Barrier Modification by Ti, Sc and V Incorporation at NiSi2/Si Interface [My Copy] Chinese Physics Letters, Vol. 26, No. 3. (2009), 037306. by Geng Li, Magyari-Kope Blanka, Zhang Zhi-Yong, Nishi Yoshio posted to schottky by valurg on 2009-07-01 10:21:42 as
	Three-Dimensional FinFET Source/Drain and Contact Design Optimization Study [My Copy] Electron Devices, IEEE Transactions on In Electron Devices, IEEE Transactions on, Vol. 56, No. 7. (2009), pp. 1483-1492. by R. A. Vega, Liu posted to schottky by valurg on 2009-07-01 09:42:20 as
	Theory of electrical spin-detection at a ferromagnet/semiconductor interface [My Copy] Physical Review B (Condensed Matter and Materials Physics), Vol. 78, No. 23. (2008), 235317. by Athanasios N. Chantis, Darryl L. Smith posted to calculation detection fe gaas interim mgo schottky spininjection by kken on 2009-06-30 14:36:38 as
	Formation of an electric dipole at metal-semiconductor interfaces [My Copy] Physical Review B, Vol. 64, No. 20. (Nov 2001), 205310. by Raymond T. Tung posted to schottky by valurg on 2009-06-23 09:55:11 as
	Electron transport of inhomogeneous Schottky barriers: A numerical study [My Copy] Journal of Applied Physics, Vol. 70, No. 12. (1991), pp. 7403-7424. by J. P. Sullivan, R. T. Tung, M. R. Pinto, W. R. Graham posted to schottky by valurg on 2009-06-23 09:52:25 as
	Electron transport at metal-semiconductor interfaces: General theory [My Copy] Physical Review B, Vol. 45, No. 23. (Jun 1992), pp. 13509-13523. by R. T. Tung posted to schottky by valurg on 2009-06-23 09:52:21 as
	Comparison of Fe/Schottky and Fe/Al[sub 2]O[sub 3] tunnel barrier contacts for electrical spin injection into GaAs [My Copy] Applied Physics Letters, Vol. 84, No. 21. (2004), pp. 4334-4336. by van 't, G. Kioseoglou, A. T. Hanbicki, et al.C. H. Li, B. T. Jonker, R. Mallory, M. Yasar, A. Petrou posted to al2o3 barrier gaas interim schottky tunnel by kken on 2009-06-20 07:52:32 as along with 2 people mountain4bike asawin
	Selective Device Structure Scaling and Parasitics Engineering: A Way to Extend the Technology Roadmap [My Copy] Electron Devices, IEEE Transactions on In Electron Devices, IEEE Transactions on, Vol. 56, No. 2. (2009), pp. 312-320. by Lan Wei, Jie Deng, Li-Wen Chang, Keunwoo Kim, Ching-Te Chuang, H. S. P. Wong posted to schottky by valurg on 2009-06-16 11:46:07 as
	Impact of Line-Edge Roughness on Double-Gate Schottky-Barrier Field-Effect Transistors [My Copy] Electron Devices, IEEE Transactions on In Electron Devices, IEEE Transactions on, Vol. 56, No. 6. (2009), pp. 1211-1219. by S. Yu, Y. Zhao, L. Zeng, et al.G. Du, J. Kang, R. Han, X. Liu posted to schottky by valurg on 2009-06-16 11:31:36 as
	Work function and barrier heights of transition metal silicides [My Copy] Applied Physics A: Materials Science & Processing, Vol. 40, No. 2. (1 June 1986), pp. 71-77. by E. Bucher, S. Schulz, Lux-Steiner, P. Munz, U. Gubler, F. Greuter posted to schottky by valurg on 2009-06-05 15:04:45 as
	A simplified self-consistent model for image force and interface charge in Schottky barriers [My Copy] Journal of Vacuum Science and Technology, Vol. 11, No. 6. (1974), pp. 951-957. by C. R. Crowell posted to schottky by valurg on 2009-06-04 10:14:12 as
	Monte Carlo simulation of Schottky contact with direct tunnelling model [My Copy] Semiconductor Science and Technology, Vol. 18, No. 6. (2003), pp. 576-581. by L. Sun, X. Y. Liu, M. Liu, G. Du, R. Q. Han posted to schottky by valurg on 2009-05-29 10:48:47 as
	Current drive in n-type Schottky Barrier MOSFETs: a Monte Carlo study [My Copy] Electron Devices, 2009. CDE 2009. Spanish Conference on In Electron Devices, 2009. CDE 2009. Spanish Conference on (2009), pp. 108-111. by E. Pascual, R. Rengel, M. J. Martin posted to schottky by valurg on 2009-05-28 08:39:13 as
	$My PDF \lusakowski_07_quasiballistic.pdf$ Quasiballistic transport in nanometer Si metal-oxide-semiconductor field-effect transistors: Experimental and Monte Carlo analysis [My Copy] Journal of Applied Physics, Vol. 101, No. 11. (2007), 114511. by J. \lusakowski, Mart\ín M. J. Mart\ínez, R. Rengel, et al.T. González, R. Tauk, Y. M. Meziani, W. Knap, F. Boeuf, T. Skotnicki posted to schottky by valurg on 2009-05-28 08:33:37 as
	Fermi-level depinning for low-barrier Schottky source/drain transistors [My Copy] Applied Physics Letters, Vol. 88, No. 1. (2006), 012105. by Daniel Connelly, Carl Faulkner, P. A. Clifton, D. E. Grupp posted to schottky by valurg on 2009-05-11 16:00:31 as
	Probing the density of states in a metal-oxide-semiconductor field-effect transistor [My Copy] Physical Review B (Condensed Matter and Materials Physics), Vol. 78, No. 19. (2008), 193309. by L. E. Calvet, J. P. Snyder, W. Wernsdorfer posted to schottky by valurg on 2009-04-25 22:04:04 as
	Gate-Induced Image Force Barrier Lowering in Schottky Barrier FETs [My Copy] Nanotechnology, IEEE Transactions on In Nanotechnology, IEEE Transactions on, Vol. 8, No. 1. (2009), pp. 10-15. by Lang Zeng, Zhiliang Xia, Gang Du, Jinfeng Kang, R. Q. Han, Xiaoyan Liu posted to schottky by valurg on 2009-04-25 21:59:40 as
	Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities [My Copy] Papers from the 26th conference on the physics and chemistry of semiconductor interfaces, Vol. 17, No. 4. (1999), pp. 1867-1876. by Winfried Mönch posted to schottky by valurg on 2009-04-25 21:53:20 as
	Interfacial atomic composition and Schottky barrier heights at the Al/GaAs(001) interface [My Copy] Proceedings of the 20th annual conference on the physics and chemistry of semiconductors interfaces, Vol. 11, No. 4. (1993), pp. 1553-1558. by R. G. Dandrea, C. B. Duke posted to barrier calculation schottky by leonhardmayrhofer on 2009-04-21 17:21:39 as
	Calculation of the Schottky barrier height at the Al/GaAs(001) heterojunction: Effect of interfacial atomic relaxations [My Copy] 39th National Symposium of the American Vacuum Society, Vol. 11, No. 4. (1993), pp. 848-853. by R. G. Dandrea, C. B. Duke posted to barrier calculation schottky by leonhardmayrhofer on 2009-04-21 16:08:55 as
	Subthreshold and scaling of PtSi Schottky barrier MOSFETs [My Copy] Superlattices and Microstructures, Vol. 28, No. 5-6. (November 2000), pp. 501-506. by L. Calvet posted to schottky by valurg on 2009-04-18 22:04:14 as
	Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology [My Copy] Journal of Applied Physics, Vol. 92, No. 12. (2002), pp. 7266-7271. by Yee C. Yeo, Tsu J. King, Chenming Hu posted to schottky by valurg on 2009-04-18 18:55:24 as
	A BEEM study of the temperature dependence of the barrier height distribution in PtSi/n-Si Schottky diodes [My Copy] Solid State Communications, Vol. 112, No. 11. (29 October 1999), pp. 611-615. by S. Zhu posted to schottky by valurg on 2009-04-18 09:19:40 as
	Chemical Bonding and Fermi Level Pinning at Metal-Semiconductor Interfaces [My Copy] Physical Review Letters, Vol. 84, No. 26. (Jun 2000), pp. 6078-6081. by Raymond T. Tung posted to schottky by valurg on 2009-04-17 20:08:21 as
	Carbon Nanotube Schottky Diodes Using Ti−Schottky and Pt−Ohmic Contacts for High Frequency Applications [My Copy] Nano Letters, Vol. 5, No. 7. (1 July 2005), pp. 1469-1474. by Harish M. Manohara, Eric W. Wong, Erich Schlecht, Brian D. Hunt, Peter H. Siegel posted to cnt contact ohmic schottky by leonhardmayrhofer on 2009-04-16 09:48:10 as
	Current transport in metal-semiconductor-metal (MSM) structures [My Copy] Solid-State Electronics, Vol. 14, No. 12. (December 1971), pp. 1209-1218. by S. M. Sze, D. J. Coleman, A. Loya posted to msm schottky by dalyx on 2009-04-15 20:42:38 as along with 1 person valurg
	Enhancement of hot-electron generation rate in Schottky source metal--oxide--semiconductor field-effect transistors [My Copy] Applied Physics Letters, Vol. 76, No. 26. (2000), pp. 3992-3994. by Ken Uchida, Kazuya Matsuzawa, Junji Koga, Shin I. Takagi, Akira Toriumi posted to schottky by valurg on 2009-04-15 10:33:49 as
	Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation [My Copy] Electronics Letters In Electronics Letters, Vol. 41, No. 19. (2005), pp. 1085-1086. by M. Zhang, J. Knoch, Q. T. Zhao, A. Fox, St Lenk, S. Mantl posted to electricmeas schottky by valurg on 2009-04-15 08:56:23 as
	Schottky-Barrier Height Tuning by Means of Ion Implantation Into Preformed Silicide Films Followed by Drive-In Anneal [My Copy] Electron Device Letters, IEEE In Electron Device Letters, IEEE, Vol. 28, No. 7. (2007), pp. 565-568. by Zhen Zhang, Zhijun Qiu, Ran Liu, M. Ostling, Shi-Li Zhang posted to schottky by valurg on 2009-04-14 17:13:01 as
	A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height Lowering [My Copy] Electron Devices, IEEE Transactions on In Electron Devices, IEEE Transactions on, Vol. 55, No. 1. (2008), pp. 396-403. by Zhijun Qiu, Zhen Zhang, M. Ostling, Shi-Li Zhang posted to schottky by valurg on 2009-04-14 17:12:32 as
	High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for <emphasis emphasistype="smcaps">nor</emphasis>-type Flash Memory [My Copy] Electron Device Letters, IEEE In Electron Device Letters, IEEE, Vol. 30, No. 3. (2009), pp. 265-268. by Sung-Jin Choi, Jin-Woo Han, Moon-Gyu Jang, et al.Jin S. Kim, Kwang H. Kim, Gi S. Lee, Jae S. Oh, Myeong H. Song, Yun C. Park, Jeoung W. Kim, Yang-Kyu Choi posted to schottky by valurg on 2009-04-14 10:02:16 as
	Tuning of the Platinum Silicide Schottky Barrier Height on n-Type Silicon by Sulfur Segregation [My Copy] Electron Device Letters, IEEE In Electron Device Letters, IEEE, Vol. 30, No. 4. (2009), pp. 331-333. by E. Alptekin, M. C. Ozturk, V. Misra posted to sbnmos schottky by valurg on 2009-04-14 09:04:59 as
	Field and thermionic-field emission in Schottky barriers [My Copy] Solid-State Electronics, Vol. 9, No. 7. (July 1966), pp. 695-707. by F. Padovani posted to schottky by valurg on 2009-04-12 10:25:52 as
	The Richardson constant for thermionic emission in Schottky barrier diodes [My Copy] Solid-State Electronics, Vol. 8, No. 4. (April 1965), pp. 395-399. by C. Crowell posted to schottky by valurg on 2009-04-11 12:45:44 as

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Tag schottky [162 articles] Export

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