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	GeSi/Si Nanostructures [My Copy] Annual Review of Materials Science, Vol. 25, No. 1. (1995), pp. 417-454. by E. A. Fitzgerald posted to sige dislocation bookchapter by mllee on 2009-12-17 01:25:07 as
	In Situ Studies of the Interaction of Dislocations with Point Defects during Annealing of Ion Implanted Si/SiGe/Si (001) Heterostructures [My Copy] Microscopy and Microanalysis, Vol. 4, No. 03. (1998), pp. 294-307. by Eric A. Stach, Robert Hull, John C. Bean, Kevin S. Jones, Ahmed Nejim posted to sige pointdefect dislocation by mllee on 2009-12-14 23:04:04 as
	Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires [My Copy] Science, Vol. 326, No. 5957. (27 November 2009), pp. 1247-1250. by C. Y. Wen, M. C. Reuter, J. Bruley, et al.J. Tersoff, S. Kodambaka, E. A. Stach, F. M. Ross posted to tem stem sige nanowire haadf eds by mllee on 2009-11-28 18:29:42 as
	Si/Si<sub>1-x</sub>Ge<sub>x</sub> heterojunction bipolar transistors produced by limited reaction processing [My Copy] Electron Device Letters, IEEE, Vol. 10, No. 2. (06 August 2002), pp. 52-54. by C. A. King, J. L. Hoyt, C. M. Gronet, J. F. Gibbons, M. Scott, J. Turner posted to sige papers_narrowtrenchmodules by stoffels on 2009-11-22 17:20:41 as
	Barrierless Formation and Faceting of SiGe Islands on Si(001) [My Copy] Physical Review Letters, Vol. 89, No. 19. (Oct 2002), 196104. by J. Tersoff, B. J. Spencer, A. Rastelli, H. von Känel posted to stm sige quantumdot nucleation by mllee on 2009-10-26 01:35:01 as
	Evolution of coherent islands in $Si1-xGex/Si(001)$ [My Copy] Physical Review B, Vol. 59, No. 3. (Jan 1999), pp. 1990-1998. by J. A. Floro, E. Chason, L. B. Freund, R. D. Twesten, R. Q. Hwang, G. A. Lucadamo posted to sige quantumdot nucleation moss by mllee on 2009-10-18 22:28:57 as
	Nucleationless Three-Dimensional Island Formation in Low-Misfit Heteroepitaxy [My Copy] Physical Review Letters, Vol. 84, No. 20. (May 2000), pp. 4637-4640. by P. Sutter, M. G. Lagally posted to sige quantumdot by mllee on 2009-10-17 19:18:57 as
	Instability-Driven SiGe Island Growth [My Copy] Physical Review Letters, Vol. 84, No. 20. (May 2000), pp. 4641-4644. by R. M. Tromp, F. M. Ross, M. C. Reuter posted to sige quantumdot by mllee on 2009-10-17 19:15:49 as
	Conduction band intersubband transitions in Ge/SiGe quantum wells [My Copy] Applied Physics Letters, Vol. 95, No. 5. (2009), 051918. by M. De Seta, G. Capellini, Y. Busby, et al.F. Evangelisti, M. Ortolani, M. Virgilio, G. Grosso, G. Pizzi, A. Nucara, S. Lupi posted to wells sige quantum intersubband by yanbusby on 2009-09-10 16:59:29 as
	Effect of hydrogen on the low-temperature growth of polycrystalline silicon film deposited by SiCl4/H2 [My Copy] Thin Solid Films, Vol. 513, No. 1-2. (14 August 2006), pp. 380-384. by R. Huang, X. Lin, W. Huang, et al.R. Yao, Y. Yu, K. Lin, J. Wei, Z. Zhu posted to sige deposition chemical_vapour_deposition by stoffels on 2009-09-08 15:27:25 as
	Scattering of Phonons by Electrons in Germanium-Silicon Alloys [My Copy] Physical Review Online Archive (Prola), Vol. 136, No. 4A. (Nov 1964), pp. A1149-A1155. by E. F. Steigmeier, B. Abeles posted to mems_damping_phononelectron mems_damping mems_damping_phonon papers_polysige-material-losses thermal_conductivity sige acoustic_losses by stoffels on 2009-09-08 10:47:17 as
	Low-Temperature Growth of Polycrystalline silicon Films by SiCl4/H2 rf Plasma Enhanced Chemical Vapour Deposition [My Copy] Chinese Physics Letters, Vol. 20, No. 10. (2003), pp. 1879-1882. by Lin Xuan-Ying, Huang Chuang-Jun, Lin Kui-Xun, Yu Yun-Peng, Yu Chu-Ying, Chi Ling-Fei posted to sige chemical_vapour_deposition by stoffels on 2009-09-08 09:45:40 as
	Charge Sensing and Controllable Tunnel Coupling in a Si/SiGe Double Quantum Dot [My Copy] Nano Letters, Vol. 0, No. 0. (0000) by C. B. Simmons, Madhu Thalakulam, B. M. Rosemeyer, et al.B. J. Van Bael, E. K. Sackmann, D. E. Savage, M. G. Lagally, R. Joynt, Mark Friesen, S. N. Coppersmith, M. A. Eriksson posted to tunnel-coupling tuning sige doubledot by akhuettel on 2009-08-17 17:49:57 as
	Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots [My Copy] (3 Aug 2009) by Robert R. Hayes, Andrey A. Kiselev, Matthew G. Borselli, et al.Steven S. Bui, Edward T. Croke, Peter W. Deelman, Brett M. Maune, Ivan Milosavljevic, Jeong-Sun Moon, Richard S. Ross, Adele E. Schmitz, Mark F. Gyure, Andrew T. Hunter posted to spin sige dot by akhuettel on 2009-08-12 17:36:46 as
	Determination of the composition and stresses in GexSi(1−x) heterostructures from Raman spectroscopy data: Refinement of model parameters [My Copy] Semiconductors, Vol. 40, No. 11. (1 November 2006), pp. 1314-1320. by V. Volodin, M. Efremov, A. Deryabin, L. Sokolov posted to germanium model raman sige silicium stress by Javi on 2009-06-14 00:24:17 as
	Phase segregation in laser crystallized polycrystalline SiGe thin films [My Copy] Thin Solid Films, Vol. 487, No. 1-2. (01 September 2005), pp. 72-76. by M. Weizman, N. Nickel, I. Sieber, et al.W. Bohne, J. Rohrich, E. Strub, B. Yan posted to amorphous cristallin germanium laser model raman sige silicium by Javi on 2009-06-14 00:07:59 as
	Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation [My Copy] Applied Physics Letters, Vol. 54, No. 7. (1989), pp. 644-646. by F. K. Legoues, R. Rosenberg, B. S. Meyerson posted to oxidation sige by JohnnyP on 2009-05-24 19:40:40 as
	Selective Etching of SiGe on SiGe/Si Heterostructures [My Copy] Journal of The Electrochemical Society, Vol. 138, No. 1. (1991), pp. 202-204. by G. K. Chang, T. K. Carns, S. S. Rhee, K. L. Wang posted to bessy etching sige by JohnnyP on 2009-05-24 14:00:36 as
	Chemical Etching of Si[sub 1 - x]Ge[sub x] in HF:H[sub 2]O[sub 2]:CH[sub 3]COOH [My Copy] Journal of The Electrochemical Society, Vol. 142, No. 4. (1995), pp. 1260-1266. by T. K. Cams, M. O. Tanner, Wang posted to bessy etching sige by JohnnyP on 2009-05-24 14:00:11 as
	Relaxed graded SiGe donor substrates incorporating hydrogen-gettering and buried etch stop layers for strained silicon layer transfer applications [My Copy] Journal of Applied Physics, Vol. 101, No. 1. (2007), 013522. by David M. Isaacson, Arthur J. Pitera, Eugene A. Fitzgerald posted to etching sige tmah by JohnnyP on 2009-05-21 12:25:45 as
	Nanoscale patterning of Si/SiGe heterostructures by electron-beam lithography and selective wet-chemical etching [My Copy] Semiconductor Science and Technology, Vol. 15, No. 8. (2000), pp. 862-867. by U. Wieser, D. Iamundo, U. Kunze, T. Hackbarth, U. Konig posted to etching sige tmah by JohnnyP on 2009-05-20 16:35:58 as
	Strain-shift coefficients for phonons in $Si1-x$$Gex$ epilayers on silicon [My Copy] Physical Review B, Vol. 45, No. 15. (Apr 1992), pp. 8565-8571. by D. J. Lockwood, J. M. Baribeau posted to germanium model raman sige silicium strain by Javi on 2009-05-15 14:33:28 as
	Characterization of Si/Ge[sub x]Si[sub 1 - x] structures by micro-Raman imaging [My Copy] Applied Physics Letters, Vol. 84, No. 14. (2004), pp. 2533-2535. by S. Nakashima, T. Yamamoto, A. Ogura, K. Uejima, T. Yamamoto posted to germanium model nanostructured raman si sige silicium strain by Javi on 2009-05-14 14:32:15 as
	Nanopatterning of Si/SiGe electrical devices by atomic force microscopy oxidation [My Copy] Applied Physics Letters, Vol. 81, No. 17. (2002), pp. 3263-3265. by Xiang Z. Bo, Leonid P. Rokhinson, Haizhou Yin, D. C. Tsui, J. C. Sturm posted to afm lao sige by JohnnyP on 2009-05-14 10:08:10 as
	SiGe quantum dot single-hole transistor fabricated by atomic force microscope nanolithography and silicon epitaxial-regrowth [My Copy] Journal of Applied Physics, Vol. 100, No. 9. (2006), 094317. by Xiang Z. Bo, L. P. Rokhinson, N. Yao, D. C. Tsui, J. C. Sturm posted to lao sige afm by JohnnyP on 2009-05-14 10:05:25 as
	Template-based assembling of SiGe/Si(001) islands by local anodic oxidation [My Copy] Applied Physics Letters, Vol. 88, No. 17. (2006), 173106. by M. Hanke, T. Boeck, A. K. Gerlitzke posted to afm lao sige by JohnnyP on 2009-05-14 09:28:22 as
	Raman scattering from Ge nanostructures grown on Si substrates: Power and limitations [My Copy] Journal of Applied Physics, Vol. 87, No. 6. (2000), pp. 2926-2930. by A. V. Kolobov posted to amorphe cristallin ge germanium model raman si sige silicium by Javi on 2009-05-13 14:03:33 as
	The use of Raman spectroscopy to identify strain and strain relaxation in strained Si/SiGe structures [My Copy] Surface and Coatings Technology, Vol. 200, No. 5-6. (21 November 2005), pp. 1755-1760. by P. Dobrosz, S. Bull, S. Olsen, A. Oneill posted to amorphe cristallin germanium model raman sige silicium by Javi on 2009-05-04 18:10:21 as
	Very low-temperature epitaxial growth of silicon and germanium using plasma-assisted CVD [My Copy] Thin Solid Films, Vol. 517, No. 1. (03 November 2008), pp. 10-13. by M. Sakuraba, D. Muto, M. Mori, K. Sugawara, J. Murota posted to ecrpecvd epitaxial ge si sige by Javi on 2009-04-20 17:14:01 as
	Atomically controlled Ge epitaxial growth on Si(100) in Ar-plasma-enhanced GeH reaction [My Copy] Materials Science in Semiconductor Processing, Vol. 8, No. 1-3. (June 2005), pp. 69-72. by K. Sugawara, M. Sakuraba, J. Murota posted to epitaxial lepecvd rf-pecvd sige by Javi on 2009-04-17 17:20:39 as
	Spectroscopic ellipsometry characterization of strained and relaxed Si[sub 1 - x]Ge[sub x] epitaxial layers [My Copy] Journal of Applied Physics, Vol. 73, No. 1. (1993), pp. 239-250. by C. Pickering, R. T. Carline, D. J. Robbins, et al.W. Y. Leong, S. J. Barnett, A. D. Pitt, A. G. Cullis posted to ellipsomtrie modle sige by Javi on 2009-04-15 15:59:09 as
	Regularization of pattern formation in heteroepitaxial thin films through surface diffusivity modulation [My Copy] Applied Physics Letters, Vol. 94, No. 8. (2009) by Y. Y. Kim, S. S. Kulkarni, S. Krishnaswamy posted to anneal quantumdot sige template by mllee on 2009-02-28 18:02:59 as
	Challenges in epitaxial growth of SiGe buffers on Si (111), (110), and (112) [My Copy] Thin Solid Films, Vol. 508, No. 1-2. (05 June 2006), pp. 136-139. by M. Lee, D. Antoniadis, E. Fitzgerald posted to 111 nsfcareer sige stackingfaults twins by mllee on 2008-11-07 19:41:14 as
	Relaxed Ge[sub x]Si[sub 1 - x] structures for III--V integration with Si and high mobility two-dimensional electron gases in Si [My Copy] Vol. 10, No. 4. (1992), pp. 1807-1819. by E. A. Fitzgerald, Y. H. Xie, D. Monroe, et al.P. J. Silverman, J. M. Kuo, A. R. Kortan, F. A. Thiel, B. E. Weir posted to gradedbuffer sige by mllee on 2008-11-07 18:29:40 as
	Totally relaxed Ge[sub x]Si[sub 1 - x] layers with low threading dislocation densities grown on Si substrates [My Copy] Applied Physics Letters, Vol. 59, No. 7. (1991), pp. 811-813. by E. A. Fitzgerald, Y. H. Xie, M. L. Green, et al.D. Brasen, A. R. Kortan, J. Michel, Mii, B. E. Weir posted to gradedbuffer mbe sige by mllee on 2008-11-07 16:48:39 as
	Identification of PamA as a PII-binding membrane protein important in nitrogen-related and sugar-catabolic gene expression in Synechocystis sp. PCC 6803. [My Copy] The Journal of biological chemistry, Vol. 280, No. 41. (14 October 2005), pp. 34684-34690. by Takashi Osanai, Shusei Sato, Satoshi Tabata, Kan Tanaka posted to pama regulation sige by dusk78 on 2008-10-21 21:25:14 as along with 1 person deborabt
	Hall effect and ionized impurity scattering in Si[sub (1 - x)]Ge[sub x] [My Copy] Journal of Applied Physics, Vol. 94, No. 11. (2003), pp. 7159-7162. by P. Kinsler, Th posted to germanium hall-effect impurity ionized my_paper physics scattering semiconductor sige silicon by pak on 2008-07-15 11:17:00 as
	Structural and optical properties of three-dimensional Si1−xGex/Si nanostructures [My Copy] Semiconductor Science and Technology, Vol. 23, No. 6. (2008), 064003. by D. J. Lockwood, J. M. Baribeau, B. V. Kamenev, E. K. Lee, L. Tsybeskov posted to ge pl quantumdot selfassembly sige by mllee on 2008-05-13 14:43:00 as
	A SiGe PA with dual dynamic bias control and memoryless digital predistortion for WCDMA handset applications [My Copy] Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE In Radio Frequency integrated Circuits (RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE (2005), pp. 247-250. by Junxiong Deng, P. Gudem, L. E. Larson, D. Kimball, P. M. Asbeck posted to asbeck dpd handset implementation kimball sige wcdma by hoverste on 2008-05-05 03:47:12 as
	A SiGe PA with dual dynamic bias control and memoryless digital predistortion for WCDMA handset applications [My Copy] Solid-State Circuits, IEEE Journal of In Solid-State Circuits, IEEE Journal of, Vol. 41, No. 5. (2006), pp. 1210-1221. by Junxiong Deng, P. S. Gudem, L. E. Larson, D. F. Kimball, P. M. Asbeck posted to asbeck dpd handset implementation kimball sige wcdma by hoverste on 2008-05-05 03:29:53 as
	Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing [My Copy] Electron Devices, IEEE Transactions on In Electron Devices, IEEE Transactions on, Vol. 53, No. 5. (2006), pp. 944-964. by P. R. Chidambaram, C. Bowen, S. Chakravarthi, C. Machala, R. Wise posted to diffusion pointdefect review sige by mllee on 2008-01-21 01:06:18 as
	Diffusion in strained Si(Ge) [My Copy] Physical Review Letters, Vol. 72, No. 16. (18 April 1994), 2585. by N. E. B. Cowern, P. C. Zalm, P. van der Sluis, D. J. Gravesteijn, W. B. de Boer posted to diffusion pointdefect sige strain by mllee on 2008-01-21 00:52:50 as
	Nonlocal reduced boron diffusivity in silicon below strained Si[sub 1 - x]Ge[sub x] surfaces [My Copy] Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 26, No. 1. (2008), pp. 72-75. by Malcolm S. Carroll, Y. S. Suh, R. Levy posted to diffusion pointdefect sige strain by mllee on 2008-01-21 00:47:15 as
	Effects of strain on boron diffusion in Si and Si[sub 1 - x]Ge[sub x] [My Copy] Applied Physics Letters, Vol. 66, No. 5. (1995), pp. 580-582. by P. Kuo, J. L. Hoyt, J. F. Gibbons, J. E. Turner, D. Lefforge posted to diffusion pointdefect sige strain by mllee on 2008-01-20 23:37:57 as
	Comparison of boron diffusion in Si and strained Si[sub 1 - x]Ge[sub x] epitaxial layers [My Copy] Applied Physics Letters, Vol. 62, No. 6. (1993), pp. 612-614. by P. Kuo, J. L. Hoyt, J. F. Gibbons, J. E. Turner, R. D. Jacowitz, T. I. Kamins posted to diffusion pointdefect sige strain by mllee on 2008-01-20 23:29:52 as
	Pressure and stress effects on the diffusion of B and Sb in Si and Si-Ge alloys [My Copy] Physical Review B (Condensed Matter and Materials Physics), Vol. 73, No. 5. (2006) by Michael J. Aziz, Yuechao Zhao, Hans J. Gossmann, Salman Mitha, Stephen P. Smith, David Schiferl posted to diffusion pointdefect sige by mllee on 2008-01-20 23:25:05 as
	Activation volume for boron diffusion in silicon and implications for strained films [My Copy] Applied Physics Letters, Vol. 74, No. 1. (1999), pp. 31-33. by Yuechao Zhao, Michael J. Aziz, Hans J. Gossmann, Salman Mitha, David Schiferl posted to pointdefect sige strain by mllee on 2008-01-20 23:16:20 as

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