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We present the fabrication and characterization of logic elements (transistors and interconnects) built using our recently developed inkjet-printer-controlled deposition of single-wall carbon nanotube network films. The method requires no preselection of “metallic” or “semiconducting” nanotubes. By selecting the number of prints on a specified region, it is possible to have low-density, nonlinear, gate-voltage controllable transistors or high-density, linear, high-current-throughput metallic interconnects without any gate-voltage response. Intermediate steps drive the films between the nonlinear and linear regimes with precise controllability. The transport mechanism in these films as a function of bias, gate voltage, and temperature dependence have been investigated and analyzed using junction properties of metal-semiconductors in the context of networks of carbon nanotubes.
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