Effects of Moisture and Hydrogen Exposure on Radiation-Induced MOS Device Degradation and Its Implications for Long-Term Aging
by: J. R. Schwank, M. R. Shaneyfelt, A. Dasgupta, S. A. Francis, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf, S. T. Pantelides, J. A. Felix, P. E. Dodd, V. Ferlet-Cavrois, P. Paillet, S. M. Dalton, S. E. Swanson, G. L. Hash, S. M. Thornberg, J. M. Hochrein, G. K. Lum
Nuclear Science, IEEE Transactions on, Vol. 55, No. 6. (December 2008), pp. 3206-3215, doi:10.1109/tns.2008.2005676 Key: citeulike:11190618
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Abstract
Transistors and ICs built in several different captive and commercial facilities were exposed to moisture, irradiated, and annealed. The moisture exposures were performed using highly accelerated stress test (HAST) at 130degC and 85% relative humidity. Irradiation of n-channel transistors exposed to HAST followed by a long-term anneal resulted in some increase in interface-trap and oxide-trapped charge buildup. However, exposing p-channel transistors to HAST preirradiation resulted in extremely large and unexpected voltage shifts immediately following irradiation. They were observed for devices with either doped oxide or nitride final chip passivation. Because of this, nitride passivation may not be sufficient to prevent H
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