Atomic Structure of Graphene on SiO2 Export

@article{citeulike:2945379, abstract = {PMID: 17497819 We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e., a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution scanning tunneling microscopy images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as they are covered with a layer of photoresist residue. We enable our experiments by a novel cleaning process to produce atomically clean graphene sheets.}, address = {Materials Research Science and Engineering Center, Department of Physics, University of Maryland, College Park, Maryland 20742, USA.}, author = {Ishigami, Masa and Chen, J. H. and Cullen, W. G. and Fuhrer, M. S. and Williams, E. D.}, booktitle = {Nano Letters}, citeulike-article-id = {2945379}, citeulike-linkout-0 = {http://dx.doi.org/10.1021/nl070613a}, citeulike-linkout-1 = {http://pubs.acs.org/doi/abs/10.1021/nl070613a}, citeulike-linkout-2 = {http://view.ncbi.nlm.nih.gov/pubmed/17497819}, citeulike-linkout-3 = {http://www.hubmed.org/display.cgi?uids=17497819}, day = {1}, doi = {10.1021/nl070613a}, issn = {1530-6984}, journal = {Nano letters}, keywords = {2007, edw, experiment, flexible-electronics, graphene, macroelectronics, materials, nano-letters}, month = {June}, number = {6}, pages = {1643--1648}, posted-at = {2008-06-30 16:47:47}, priority = {5}, title = {Atomic Structure of Graphene on SiO2}, url = {http://dx.doi.org/10.1021/nl070613a}, volume = {7}, year = {2007} }

TY - JOUR ID - citeulike:2945379 L3 - citeulike-article-id:2945379 N2 - PMID: 17497819 We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e., a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution scanning tunneling microscopy images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as they are covered with a layer of photoresist residue. We enable our experiments by a novel cleaning process to produce atomically clean graphene sheets. IS - 6 JF - Nano letters SN - 1530-6984 AD - Materials Research Science and Engineering Center, Department of Physics, University of Maryland, College Park, Maryland 20742, USA. EP - 1648 TI - Atomic Structure of Graphene on SiO2 VL - 7 T2 - Nano Letters SP - 1643 KW - 2007 KW - edw KW - experiment KW - flexible-electronics KW - graphene KW - macroelectronics KW - materials KW - nano-letters AU - Ishigami, Masa AU - Chen, JH AU - Cullen, WG AU - Fuhrer, MS AU - Williams, ED PY - 2007/06/01/ UR - http://dx.doi.org/10.1021/nl070613a ER -