Mechanics of thin-film transistors and solar cells on flexible substrates Export

@article{citeulike:764512, abstract = {When devices are fabricated on thin foil substrates, any mismatch strain in the device structure makes the work piece curve. Any change of the radius of curvature produces a change in the size of the work piece, and thereby misalignment between individual device layers. To achieve tight tolerances, changes of curvature must be minimized throughout the fabrication process.Amorphous silicon thin-film transistors and solar cells respond differently to externally applied tensile strain. The elastic deformation of the transistor is correlated with small increase in the electron mobility. When the tensile strain reaches \~{}0.34\%, crack formation starts and causes an abrupt change in the transistor performance. The performance of solar cells, on the other hand, does not change for tensile strain up to \~{}0.7\%. At larger strain the short-circuit current, open-circuit voltage, fill factor, and the efficiency gradually decrease.}, author = {Gleskova, Helena and Cheng, I-Chun and Wagner, Sigurd and Sturm, James C. and Suo, Zhigang}, booktitle = {SREN '05 - Solar Renewable Energy News Conference}, citeulike-article-id = {764512}, citeulike-linkout-0 = {http://dx.doi.org/10.1016/j.solener.2005.10.010}, citeulike-linkout-1 = {http://www.sciencedirect.com/science/article/B6V50-4HWXHD9-3/2/6f24276800b377b6942c9e9140f53751}, doi = {10.1016/j.solener.2005.10.010}, journal = {Solar Energy}, keywords = {experiment, flexible-electronics, macroelectronics, mechanics, modeling, polymer-substrate, solar-cell, tft}, month = {June}, number = {6}, pages = {687--693}, posted-at = {2006-08-15 17:52:22}, priority = {3}, title = {Mechanics of thin-film transistors and solar cells on flexible substrates}, url = {http://dx.doi.org/10.1016/j.solener.2005.10.010}, volume = {80}, year = {2006} }

TY - JOUR ID - citeulike:764512 L3 - citeulike-article-id:764512 N2 - When devices are fabricated on thin foil substrates, any mismatch strain in the device structure makes the work piece curve. Any change of the radius of curvature produces a change in the size of the work piece, and thereby misalignment between individual device layers. To achieve tight tolerances, changes of curvature must be minimized throughout the fabrication process.Amorphous silicon thin-film transistors and solar cells respond differently to externally applied tensile strain. The elastic deformation of the transistor is correlated with small increase in the electron mobility. When the tensile strain reaches ~0.34%, crack formation starts and causes an abrupt change in the transistor performance. The performance of solar cells, on the other hand, does not change for tensile strain up to ~0.7%. At larger strain the short-circuit current, open-circuit voltage, fill factor, and the efficiency gradually decrease. IS - 6 JF - Solar Energy EP - 693 TI - Mechanics of thin-film transistors and solar cells on flexible substrates VL - 80 T2 - SREN '05 - Solar Renewable Energy News Conference SP - 687 KW - experiment KW - flexible-electronics KW - macroelectronics KW - mechanics KW - modeling KW - polymer-substrate KW - solar-cell KW - tft AU - Gleskova, Helena AU - Cheng, I-Chun AU - Wagner, Sigurd AU - Sturm, James AU - Suo, Zhigang PY - 2006/06// UR - http://dx.doi.org/10.1016/j.solener.2005.10.010 ER -