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In Solid State Sensors and Actuators, 1997. TRANSDUCERS 97 Chicago., 1997 International Conference on, Vol. 1 (June 1997), pp. 629-632 vol.1, doi:10.1109/sensor.1997.613730 Key: citeulike:11386489
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Reports on a transfer technique for CMOS circuits based on a newly developed bonding technique, namely wafer scale adhesive bonding using epoxies. The circuit transfer sequence consists of three steps: bonding a CMOS processed SIMOX wafer to a Pyrex glass wafer, thinning the SIMOX wafer down to the buried oxide and exposing the contact pads. A test chip was designed to evaluate the impact of circuit transfer on the device performance. Measurements have shown a slight increase in leakage current and a small change of threshold voltage due to stress induced by the circuit transfer
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