Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy Export

@article{citeulike:5155777, abstract = {This paper reports that the GaN thin films with Ga-polarity and high quality were grown by radio-frequency molecular beam epitaxy on sapphire (0001) substrate with a double AlN buffer layer. The buffer layer consists of a high-temperature (HT) AlN layer and a low-temperature (LT) AlN layer grown at 800degC and 600degC, respectively. It is demonstrated that the HT-AlN layer can result in the growth of GaN epilayer in Ga-polarity and the LT-AlN layer is helpful for the improvement of the epilayer quality. It is observed that the carrier mobility of the GaN epilayer increases from 458 to 858cm2/V*s at room temperature when the thickness of LT-AlN layer varies from 0 to 20 nm. The full width at half maximum of x-ray rocking curves also demonstrates a substantial improvement in the quality of GaN epilayers by the utilization of LT-AlN layer.}, author = {Xin-Hua, Li and Fei, Zhong and Kai, Qiu and Zhi-Jun, Yin and Chang-Jian, Ji}, citeulike-article-id = {5155777}, citeulike-linkout-0 = {http://dx.doi.org/10.1088/1674-1056/17/4/034}, doi = {10.1088/1674-1056/17/4/034}, journal = {Chinese Physics B}, keywords = {buffer}, number = {4}, pages = {1360--1363}, posted-at = {2009-07-15 07:28:50}, priority = {2}, title = {Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy}, url = {http://dx.doi.org/10.1088/1674-1056/17/4/034}, volume = {17}, year = {2008} }

TY - JOUR ID - citeulike:5155777 L3 - citeulike-article-id:5155777 N2 - This paper reports that the GaN thin films with Ga-polarity and high quality were grown by radio-frequency molecular beam epitaxy on sapphire (0001) substrate with a double AlN buffer layer. The buffer layer consists of a high-temperature (HT) AlN layer and a low-temperature (LT) AlN layer grown at 800degC and 600degC, respectively. It is demonstrated that the HT-AlN layer can result in the growth of GaN epilayer in Ga-polarity and the LT-AlN layer is helpful for the improvement of the epilayer quality. It is observed that the carrier mobility of the GaN epilayer increases from 458 to 858cm2/V*s at room temperature when the thickness of LT-AlN layer varies from 0 to 20 nm. The full width at half maximum of x-ray rocking curves also demonstrates a substantial improvement in the quality of GaN epilayers by the utilization of LT-AlN layer. IS - 4 JF - Chinese Physics B EP - 1363 TI - Effect of double AlN buffer layer on the qualities of GaN films grown by radio-frequency molecular beam epitaxy VL - 17 SP - 1360 KW - buffer AU - Xin-Hua, Li AU - Fei, Zhong AU - Kai, Qiu AU - Zhi-Jun, Yin AU - Chang-Jian, Ji PY - 2008/// UR - http://dx.doi.org/10.1088/1674-1056/17/4/034 ER -