The numerical modelling of silicon carbide high power semiconductor devices
Over the past decade there was a renewed surge of activity concerning the research and development of the wide bandgap group IV compound semiconductor silicon carbide (SiC). The current research interest in SiC for power electronic applications has re-emerged because of the advances made in fundamental SiC material and device processing technologies. This article outlines recent SiC power device developments with an emphasis on numerical device modelling results. This work also presents 1D and 2D numerical modelling results for unterminated circular high voltage 4H–SiC Schottky rectifiers. An overview of the current status of SiC high voltage junction termination techniques is also mentioned.