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IEEE Journal of Solid-State Circuits, Vol. 27, No. 3. (March 1992), pp. 241-246, doi:10.1109/4.121544 Key: citeulike:8744421
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The motivation and challenges of IC reliability simulation are discussed. The reliability simulator BERT is used to illustrate the physical models and approaches used to simulate the hot-electron effect, oxide time-dependent breakdown, electromigration, and bipolar transistor gain degradation
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