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The dissociation energy of extended dislocations in fcc latticesby: Gunther Schoeck
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AbstractThe dissociation of a dislocation in the {111} plane of a fee crystal into two Shockley partials is studied in the framework of the generalized Peierls model. The interplanar atomic misfit energy (the &b.gamma;-surface) is represented by a two-dimensional Fourier series in which the stacking fault energy &b.gamma;<sub><i>g</i></sub> and the maximum stacking energy &b.gamma;<sub><i>m</i></sub> can be varied independently. Whereas for Volterra dislocations the separation <i>d</i><sub>0</sub> of the Shockley partials depends only on &b.gamma;<sub><i>g</i></sub>, it turns out that in the more general treatment the equilibrium separation <i>d</i> depends also on &b.gamma;<sub><i>m</i></sub>. Hence previous experimental determinations of &b.gamma;<sub><i>g</i></sub> from TEM observations have to be re-evaluated. The energy &b.Delta;<i>E</i><sub>p</sub> to recombine the two Shockley partials also depends on the value of &b.Delta;<i>E</i><sub>v</sub>. Agreement with the dissociation energy &b.Delta;<i>E</i><sub>v</sub> for a Volterra dislocation in screw orientation can only be obtained when the recombination radius is chosen <i>r</i><sub>c</sub> ≈ 0.15<i>b</i>.
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