Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy Export

@article{citeulike:2970959, abstract = {Epitaxial growth of graphene on SiC surfaces by solid state graphitization is a promising route for future development of graphene based electronics. In the present work, we have studied the morphology, atomic scale structure, and electronic structure of thin films of few-layer graphene (FLG) on SiC(0001) by scanning tunneling microscopy and spectroscopy (STS). We show that a quantitative evaluation of the roughness induced by the interface is a tool for determining the layer thickness of FLG. We present and interpret thickness dependent tunneling spectra, which can serve as an additional fingerprint for the determination of the layer thickness. By performing spatially resolved STS, we find evidence that the charge distribution in bilayer graphene is inhomogeneous.}, author = {Lauffer, P. and Emtsev, K. V. and Graupner, R. and Th and Ley, L. and Reshanov, S. A. and Weber, H. B.}, citeulike-article-id = {2970959}, citeulike-linkout-0 = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=PRBMDO000077000015155426000001&idtype=cvips&gifs=yes}, citeulike-linkout-1 = {http://link.aps.org/abstract/PRB/v77/e155426}, citeulike-linkout-2 = {http://dx.doi.org/10.1103/PhysRevB.77.155426}, doi = {10.1103/PhysRevB.77.155426}, journal = {Physical Review B (Condensed Matter and Materials Physics)}, keywords = {atomic-structure, experiment, graphene, graphene-substrate, roughness}, number = {15}, posted-at = {2008-07-07 21:37:21}, priority = {2}, publisher = {APS}, title = {Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy}, url = {http://dx.doi.org/10.1103/PhysRevB.77.155426}, volume = {77}, year = {2008} }

TY - JOUR ID - citeulike:2970959 L3 - citeulike-article-id:2970959 N2 - Epitaxial growth of graphene on SiC surfaces by solid state graphitization is a promising route for future development of graphene based electronics. In the present work, we have studied the morphology, atomic scale structure, and electronic structure of thin films of few-layer graphene (FLG) on SiC(0001) by scanning tunneling microscopy and spectroscopy (STS). We show that a quantitative evaluation of the roughness induced by the interface is a tool for determining the layer thickness of FLG. We present and interpret thickness dependent tunneling spectra, which can serve as an additional fingerprint for the determination of the layer thickness. By performing spatially resolved STS, we find evidence that the charge distribution in bilayer graphene is inhomogeneous. IS - 15 JF - Physical Review B (Condensed Matter and Materials Physics) TI - Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy PB - APS VL - 77 KW - atomic-structure KW - experiment KW - graphene KW - graphene-substrate KW - roughness AU - Lauffer, P AU - Emtsev, KV AU - Graupner, R AU - Th AU - Ley, L AU - Reshanov, SA AU - Weber, HB PY - 2008/// UR - http://dx.doi.org/10.1103/PhysRevB.77.155426 ER -