Graphene Transistors Fabricated via Transfer-Printing In Device Active-Areas on Large Wafer Export

@article{citeulike:4408243, abstract = {We demonstrate a method that uses the pillars on a stamp to cut and exfoliate graphene islands from a graphite and then uses transfer printing to place the islands from the stamp into the device active-areas on a substrate with a placement accuracy potentially in nanometers. The process can be repeated to cover all device active-areas over an entire wafer. We also report the transistors fabricated from the printed graphene. The transistors show a hole and electron mobility of 3735 and 795 cm2/V-s, respectively, and a maximum drive-current of 1.7 mA/mum (at VDS = 1 V), which are among the highest reported for room temperature. The effects of various transferring and fixing layers on sticking graphenes to a stamp and to a substrate, respectively, were also investigated.}, author = {Liang, Xiaogan and Fu, Zengli and Chou, Stephen Y.}, citeulike-article-id = {4408243}, citeulike-linkout-0 = {http://dx.doi.org/10.1021/nl072566s}, citeulike-linkout-1 = {http://pubs.acs.org/doi/abs/10.1021/nl072566s}, day = {1}, doi = {10.1021/nl072566s}, journal = {Nano Letters}, keywords = {graphene, graphene-applications, graphene-fabrication}, month = {December}, number = {12}, pages = {3840--3844}, posted-at = {2009-04-26 20:25:53}, priority = {2}, title = {Graphene Transistors Fabricated via Transfer-Printing In Device Active-Areas on Large Wafer}, url = {http://dx.doi.org/10.1021/nl072566s}, volume = {7}, year = {2007} }

TY - JOUR ID - citeulike:4408243 L3 - citeulike-article-id:4408243 N2 - We demonstrate a method that uses the pillars on a stamp to cut and exfoliate graphene islands from a graphite and then uses transfer printing to place the islands from the stamp into the device active-areas on a substrate with a placement accuracy potentially in nanometers. The process can be repeated to cover all device active-areas over an entire wafer. We also report the transistors fabricated from the printed graphene. The transistors show a hole and electron mobility of 3735 and 795 cm2/V-s, respectively, and a maximum drive-current of 1.7 mA/mum (at VDS = 1 V), which are among the highest reported for room temperature. The effects of various transferring and fixing layers on sticking graphenes to a stamp and to a substrate, respectively, were also investigated. IS - 12 JF - Nano Letters EP - 3844 TI - Graphene Transistors Fabricated via Transfer-Printing In Device Active-Areas on Large Wafer VL - 7 SP - 3840 KW - graphene KW - graphene-applications KW - graphene-fabrication AU - Liang, Xiaogan AU - Fu, Zengli AU - Chou, Stephen PY - 2007/12/01/ UR - http://dx.doi.org/10.1021/nl072566s ER -