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Diode-Pumped 214.8-nm Nd:YAG /Cr 4 +:YAG Microchip Laser System for the Detection of NO Export

Appl. Opt., Vol. 39, No. 24. (20 August 2000), pp. 4418-4424.

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microchip nitric_oxide

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A passively Q-switched 214.8-nm Nd:YAG/Cr4+:YAG microchip laser system for the detection of NO was designed, constructed, and tested. The system uses the fifth harmonic of the 1.074-μm transition in Nd:YAG to detect NO by laser-induced fluorescence. A significant challenge was the development of an environmentally stable coating to provide the necessary discrimination between the 1.074-μm laser line and the stronger transition at 1.064 μm. The exact position of the fifth-harmonic frequency was determined by use of NO fluorescence excitation spectra to be 46556 ∓ 1.5 cm−1. With a pulse energy of approximately 50 nJ of fifth-harmonic light, we observed a detection sensitivity for NO of approximately 15 parts per billion by volume in a simple, compact optical system.


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