A charge transfer ionic-embedded atom method potential for the O-Al-Ni-Co-Fe system Export

@article{zhou, abstract = {Magnetic tunnel junctions (MTJs) require the growth of a thin (similar to 20 angstrom) dielectric metal oxide layer, such as Al2O3, on a ferromagnetic metal layer, such as Co, CoFe, or CoNiFe. The atomic assembly mechanisms that combine to form a uniformly thin metal oxide layer on these metal surfaces are not well understood. The application of molecular dynamics simulations to the growth of metal and metal oxide multilayers that involve more than one metal element has not been possible using the conventional interatomic potentials. A recently proposed modified charge transfer ionic-embedded atom method potential appears to correctly enable the charge transfer between oxygen and numerous metal elements to be modelled in a format amenable for molecular dynamics studies. Here we parametrize this charge transfer ionic-embedded atom method potential for the quinternary O-Al-Ni-Co-Fe system so that a direct molecular dynamics simulation of the growth of the tunnelling magnetoresistive multilayers can be realized.}, author = {Zhou, X. W. and Wadley, Hng}, citeulike-article-id = {487520}, journal = {Journal Of Physics-Condensed Matter}, keywords = {dependent, devices, films, junctions, magnetoresistance, models, molecular-dynamics, multilayers, oxidation, simulations, surface, tunneling, zirconia}, pages = {3619--3635}, posted-at = {2006-01-31 17:29:02}, priority = {0}, title = {A charge transfer ionic-embedded atom method potential for the O-Al-Ni-Co-Fe system}, volume = {17}, year = {2005} }

TY - JOUR ID - zhou L3 - citeulike-article-id:487520 N2 - Magnetic tunnel junctions (MTJs) require the growth of a thin (similar to 20 angstrom) dielectric metal oxide layer, such as Al2O3, on a ferromagnetic metal layer, such as Co, CoFe, or CoNiFe. The atomic assembly mechanisms that combine to form a uniformly thin metal oxide layer on these metal surfaces are not well understood. The application of molecular dynamics simulations to the growth of metal and metal oxide multilayers that involve more than one metal element has not been possible using the conventional interatomic potentials. A recently proposed modified charge transfer ionic-embedded atom method potential appears to correctly enable the charge transfer between oxygen and numerous metal elements to be modelled in a format amenable for molecular dynamics studies. Here we parametrize this charge transfer ionic-embedded atom method potential for the quinternary O-Al-Ni-Co-Fe system so that a direct molecular dynamics simulation of the growth of the tunnelling magnetoresistive multilayers can be realized. JF - Journal Of Physics-Condensed Matter EP - 3635 TI - A charge transfer ionic-embedded atom method potential for the O-Al-Ni-Co-Fe system VL - 17 SP - 3619 KW - dependent KW - devices KW - films KW - junctions KW - magnetoresistance KW - models KW - molecular-dynamics KW - multilayers KW - oxidation KW - simulations KW - surface KW - tunneling KW - zirconia AU - Zhou, XW AU - Wadley, Hng PY - 2005/// ER -