Novel read disturb failure mechanism induced by FLASH cycling Export

@proceedings{citeulike:4946570, abstract = {The read disturb failure mechanism reported causes unselected erased bits residing on selected wordlines to gain charge under low field conditions, causing them to appear programmed. This failure appears to be due to electron tunneling barrier lowering by positive charge trapped during program/erase cycling. The Si-SiO₂ barrier in failing bits is reduced from 3.0 eV to under 1.0 eV at 70\°C. The FLASH EPROM array failure rate dependence on cycling, stress voltage, temperature, and duty cycle is characterized. A low failure rate has been found for the fabrication process studied}, author = {Brand, A. and Wu, K. and Pan, S. and Chin, D.}, booktitle = {Reliability Physics Symposium, 1993. 31st Annual Proceedings., International}, citeulike-article-id = {4946570}, citeulike-linkout-0 = {http://dx.doi.org/10.1109/RELPHY.1993.283291}, citeulike-linkout-1 = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=283291}, doi = {10.1109/RELPHY.1993.283291}, journal = {Reliability Physics Symposium, 1993. 31st Annual Proceedings., International}, pages = {127--132}, posted-at = {2009-06-24 18:55:01}, priority = {2}, title = {Novel read disturb failure mechanism induced by FLASH cycling}, url = {http://dx.doi.org/10.1109/RELPHY.1993.283291}, year = {1993} }

TY - CONF ID - citeulike:4946570 L3 - citeulike-article-id:4946570 N2 - The read disturb failure mechanism reported causes unselected erased bits residing on selected wordlines to gain charge under low field conditions, causing them to appear programmed. This failure appears to be due to electron tunneling barrier lowering by positive charge trapped during program/erase cycling. The Si-SiO₂ barrier in failing bits is reduced from 3.0 eV to under 1.0 eV at 70°C. The FLASH EPROM array failure rate dependence on cycling, stress voltage, temperature, and duty cycle is characterized. A low failure rate has been found for the fabrication process studied JF - Reliability Physics Symposium, 1993. 31st Annual Proceedings., International EP - 132 TI - Novel read disturb failure mechanism induced by FLASH cycling T2 - Reliability Physics Symposium, 1993. 31st Annual Proceedings., International SP - 127 AU - Brand, A AU - Wu, K AU - Pan, S AU - Chin, D PY - 1993/// UR - http://dx.doi.org/10.1109/RELPHY.1993.283291 ER -