Comparison of Fe/Schottky and Fe/Al[sub 2]O[sub 3] tunnel barrier contacts for electrical spin injection into GaAs Export

@article{citeulike:325276, abstract = {We compare electrical spin injection from Fe films into identical GaAs-based light-emitting diodes (LEDs) using different tunnel barriers—a reverse-biased Fe/AlGaAs Schottky contact and an Fe/Al2O3 barrier. Both types of structures are formed in situ using a multichamber molecular-beam epitaxy system. A detailed analysis of the transport data confirms that tunneling occurs in each case. We find that the spin polarization achieved in the GaAs using the Al2O3 barrier is 40\% (best case; 30\% typical), but the electrical efficiency is significantly lower than that of the Fe Schottky contact. {\copyright}2004 American Institute of Physics.}, author = {Van't and Kioseoglou, G. and Hanbicki, A. T. and Li, C. H. and Jonker, B. T. and Mallory, R. and Yasar, M. and Petrou, A.}, citeulike-article-id = {325276}, citeulike-linkout-0 = {http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000084000021004334000001&idtype=cvips&gifs=yes}, citeulike-linkout-1 = {http://link.aip.org/link/?APL/84/4334}, citeulike-linkout-2 = {http://dx.doi.org/10.1063/1.1758305}, doi = {10.1063/1.1758305}, journal = {Applied Physics Letters}, keywords = {algaas-gaas, fe, heterostructure, qw, schottky, sp-led, spin, spin-injection, spintronics, tunnel-barier}, number = {21}, pages = {4334--4336}, posted-at = {2005-09-18 09:35:42}, priority = {5}, publisher = {AIP}, title = {Comparison of Fe/Schottky and Fe/Al[sub 2]O[sub 3] tunnel barrier contacts for electrical spin injection into GaAs}, url = {http://dx.doi.org/10.1063/1.1758305}, volume = {84}, year = {2004} }

TY - JOUR ID - citeulike:325276 L3 - citeulike-article-id:325276 N2 - We compare electrical spin injection from Fe films into identical GaAs-based light-emitting diodes (LEDs) using different tunnel barriers—a reverse-biased Fe/AlGaAs Schottky contact and an Fe/Al2O3 barrier. Both types of structures are formed in situ using a multichamber molecular-beam epitaxy system. A detailed analysis of the transport data confirms that tunneling occurs in each case. We find that the spin polarization achieved in the GaAs using the Al2O3 barrier is 40% (best case; 30% typical), but the electrical efficiency is significantly lower than that of the Fe Schottky contact. ©2004 American Institute of Physics. IS - 21 JF - Applied Physics Letters EP - 4336 TI - Comparison of Fe/Schottky and Fe/Al[sub 2]O[sub 3] tunnel barrier contacts for electrical spin injection into GaAs PB - AIP VL - 84 SP - 4334 KW - algaas-gaas KW - fe KW - heterostructure KW - qw KW - schottky KW - sp-led KW - spin KW - spin-injection KW - spintronics KW - tunnel-barier AU - Van't AU - Kioseoglou, G AU - Hanbicki, AT AU - Li, CH AU - Jonker, BT AU - Mallory, R AU - Yasar, M AU - Petrou, A PY - 2004/// UR - http://dx.doi.org/10.1063/1.1758305 ER -