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Endotaxial Silicide Nanowires

by: Zhian He, David J. Smith, P. A. Bennett
Physical Review Letters, Vol. 93 (Dec 2004), 256102, doi:10.1103/physrevlett.93.256102  Key: citeulike:11866863

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Abstract

We demonstrate the growth of self-assembled nanowires of cobalt silicide on Si(111), (100), and (110) substrates during deposition of Co onto a heated Si substrate. Silicide islands form via an endotaxial mechanism, growing into the substrate along inclined Si1̅ 11 planes, which breaks the symmetry of the surface and leads to a long, thin nanowire shape. During growth, both the length and width of the islands increase with time in a fixed proportion that varies strongly with growth temperature, which shows that the nanowire shape is kinetically determined. It is expected that nanowires could form in many other overlayer/substrate systems via this mechanism.


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