Direct measurement of surface stress during Bi-mediated Ge growth on Si
We have focused on stress measurements during Bi termination of Si (111) and Ge growth on this Bi-mediated Si (111). In order to obtain information on both the surface stress and the surface structure simultaneously, we have combined the surface-curvature and the reflection-high-electron-energy-diffraction instrumentations in an identical ultrahigh vacuum system. We find the Bi-terminated Si (111) √3 × √3-Î² surface releases 1.8 N/m (= J/m2), or (1.4 eV/(1 × 1 unit cell)), of the surface energy from the strong tensile Si (111) 7 × 7 reconstruction. Subsequent Ge deposition on the Bi-terminated Si surface develops a compressive stress, which oscillates with a period corresponding to the growth of a single bilayer. The real-time stress measurement provides a direct evidence for this oscillatory stress relaxation in the layer-by-layer growth. âº A difference in surface stress between Si(111) 7×7 and Bi-Si(111) √3×√3-Î². âº Surface stress evolution during Ge growth on Bi-Si(111). âº Combined surface-curvature and RHEED instrumentations in an identical system. âº Bi-Si(111) √3×√3-Î² releases 1.4 eV/(1×1 unit cell) from tensile Si(111) 7×7. âº Ge on Bi-Si(111) shows a oscillatory stress relaxation in layer-by-layer growth.