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Three-dimensional composition mapping of NiSi phase distribution and Pt diffusion via grain boundaries in Ni2Si

by: Dominique Mangelinck, Khalid Hoummada, Alain Portavoce, Carine Perrin, Rachid Daineche, Marion Descoins, David J. Larson, Peter H. Clifton
Scripta Materialia, Vol. 62, No. 8. (04 April 2010), pp. 568-571, doi:10.1016/j.scriptamat.2009.12.044  Key: citeulike:6518155

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Abstract

The formation of Ni silicide alloyed with Pt has been analyzed by atom probe tomography. A 300 °C/1 h anneal results in simultaneous growth of the NiSi and Ni2Si phases: the Ni2Si phase is a continuous layer with columnar grains, while the NiSi phase forms a discontinuous layer. Direct evidence of Pt diffusion short-circuits via Ni2Si grain boundaries is shown. The presence of Pt in the grains and interphase boundaries may explain the change in the Ni silicide formation for the Ni(5% Pt)/Si system.


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