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Synthesis and Strain Relaxation of Ge-Core/Si-Shell Nanowire Arrays

by: Irene A. Goldthorpe, Ann F. Marshall, Paul C. McIntyre
Nano Lett. In Nano Letters, Vol. 8, No. 11. (28 October 2008), pp. 4081-4086, doi:10.1021/nl802408y  Key: citeulike:6746220

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Abstract

Analogous to planar heteroepitaxy, misfit dislocation formation and stress-driven surface roughening can relax coherency strains in misfitting core?shell nanowires. The effects of coaxial dimensions on strain relaxation in aligned arrays of Ge-core/Si-shell nanowires are analyzed quantitatively by transmission electron microscopy and synchrotron X-ray diffraction. Relating these results to reported continuum elasticity models for coaxial nanowire heterostructures provides valuable insights into the observed interplay of roughening and dislocation-mediated strain relaxation.


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