Photoluminescence spectra of doped GaAs films Export

@article{citeulike:3483795, abstract = {We have studied the dependence of the photoluminescence (PL) spectrum on the doping level and the film thickness of n-GaAs thin films, both experimentally and theoretically. It has been shown theoretically that modification of the PL spectrum of p-type material by p-type doping is very small due to the large valence-band hole effective mass. The PL spectrum of n-type material is affected by two factors: (1) the electron concentration which determines the Fermi level in the material; (2) the thickness of the film due to re-absorption of the PL signal. For the n-type GaAs thin films under current investigation, the doping level as well as the film thickness can be very well calibrated by the PL spectrum when the doping level is less than 2×10 18 cm -3 and the film thickness is in the range of the penetration length of the PL excitation laser.}, author = {Fu, Y. and Willander, M. and Chen, G. B. and Ji, Y. L. and Lu, W.}, citeulike-article-id = {3483795}, citeulike-linkout-0 = {http://dx.doi.org/10.1007/s00339-004-2560-y}, day = {1}, doi = {10.1007/s00339-004-2560-y}, journal = {Applied Physics A: Materials Science \& Processing}, keywords = {gaas}, number = {3}, pages = {619--623}, posted-at = {2008-11-06 06:40:26}, priority = {2}, title = {Photoluminescence spectra of doped GaAs films}, url = {http://dx.doi.org/10.1007/s00339-004-2560-y}, volume = {79}, year = {2004} }

TY - JOUR ID - citeulike:3483795 L3 - citeulike-article-id:3483795 N2 - We have studied the dependence of the photoluminescence (PL) spectrum on the doping level and the film thickness of n-GaAs thin films, both experimentally and theoretically. It has been shown theoretically that modification of the PL spectrum of p-type material by p-type doping is very small due to the large valence-band hole effective mass. The PL spectrum of n-type material is affected by two factors: (1) the electron concentration which determines the Fermi level in the material; (2) the thickness of the film due to re-absorption of the PL signal. For the n-type GaAs thin films under current investigation, the doping level as well as the film thickness can be very well calibrated by the PL spectrum when the doping level is less than 2×10 18 cm -3 and the film thickness is in the range of the penetration length of the PL excitation laser. IS - 3 JF - Applied Physics A: Materials Science & Processing EP - 623 TI - Photoluminescence spectra of doped GaAs films VL - 79 SP - 619 KW - gaas AU - Fu, Y AU - Willander, M AU - Chen, GB AU - Ji, YL AU - Lu, W PY - 2004//01/ UR - http://dx.doi.org/10.1007/s00339-004-2560-y ER -