Effects of Annealing in a Partially Reducing Atmosphere on Sputtered Al-Doped ZnO Thin Films Export

@article{citeulike:4240738, abstract = {Aluminum-doped ZnO (AZO) films have been deposited by room-temperature radio frequency (RF) magnetron sputtering onto fused-quartz substrates using a ZnO:Al2O3 (98:2\ wt.\%) target. A post-deposition anneal in an N2 flow has been shown to improve the electrical and optical properties of as-deposited AZO. All films were polycrystalline and exhibited a hexagonal wurtzite structure with the c-axis oriented perpendicular to the substrate. An increase in the estimated crystallite size was observed after annealing. Electrical resistivity was reduced from 3.7\ ×\ 10−3\ Ω\ cm for as-deposited layers to 7.1\ ×\ 10−4\ Ω\ cm for annealed films. An average optical transmittance \>85\% for annealed films was routinely measured. X-ray photoelectron spectroscopy measurements indicated that the surfaces of all layers investigated were oxygen deficient, and the density of oxygen vacancies was found to increase following the anneal.}, author = {Lennon, C. and Tapia, R. and Kodama, R. and Chang, Y. and Sivananthan, S. and Deshpande, M.}, citeulike-article-id = {4240738}, citeulike-linkout-0 = {http://dx.doi.org/10.1007/s11664-009-0747-x}, citeulike-linkout-1 = {http://www.springerlink.com/content/831t4294vl5wjpqv}, doi = {10.1007/s11664-009-0747-x}, journal = {Journal of Electronic Materials}, keywords = {absorbance, anneal, azo, conductivity, xps, xrd}, posted-at = {2009-04-21 22:32:00}, priority = {2}, title = {Effects of Annealing in a Partially Reducing Atmosphere on Sputtered Al-Doped ZnO Thin Films}, url = {http://dx.doi.org/10.1007/s11664-009-0747-x} }

TY - JOUR ID - citeulike:4240738 L3 - citeulike-article-id:4240738 N2 - Aluminum-doped ZnO (AZO) films have been deposited by room-temperature radio frequency (RF) magnetron sputtering onto fused-quartz substrates using a ZnO:Al2O3 (98:2 wt.%) target. A post-deposition anneal in an N2 flow has been shown to improve the electrical and optical properties of as-deposited AZO. All films were polycrystalline and exhibited a hexagonal wurtzite structure with the c-axis oriented perpendicular to the substrate. An increase in the estimated crystallite size was observed after annealing. Electrical resistivity was reduced from 3.7 × 10−3 Ω cm for as-deposited layers to 7.1 × 10−4 Ω cm for annealed films. An average optical transmittance >85% for annealed films was routinely measured. X-ray photoelectron spectroscopy measurements indicated that the surfaces of all layers investigated were oxygen deficient, and the density of oxygen vacancies was found to increase following the anneal. JF - Journal of Electronic Materials TI - Effects of Annealing in a Partially Reducing Atmosphere on Sputtered Al-Doped ZnO Thin Films KW - absorbance KW - anneal KW - azo KW - conductivity KW - xps KW - xrd AU - Lennon, C AU - Tapia, R AU - Kodama, R AU - Chang, Y AU - Sivananthan, S AU - Deshpande, M UR - http://dx.doi.org/10.1007/s11664-009-0747-x ER -