RF diode reactive sputtering of n- and p-type zinc oxide thin films Export

@article{citeulike:4450092, abstract = {We present the relationship between parameters of reactive RF diode sputtering from a zinc oxide (ZnO) target and the crystalline, electrical and optical properties of n-/p-type ZnO thin films. The properties of the ZnO thin films depended on RF power, substrate temperature and, particularly, on working gas mixtures of Ar/O 2 and of Ar/N 2 . Sputtering in Ar+O 2 working gas (up to 75\% of O 2 ) improved the structure of an n-type ZnO thin film, from fibrous ZnO grains to columnar crystallites, both preferentially oriented along the c -axis normally to the substrate ( 0 0 2 direction). These films had good piezoelectric properties but also high resistivity ( ρ ≈10 3  Ω cm). ZnO:N p-type films exhibited nanograin structure with preferential 0 0 2 orientation at 25\% N 2 and 1 0 0 orientation for higher N 2 content. The presence of nitrogen N O at O-sites forming N O –O acceptor complexes in ZnO was proven by SIMS and Raman spectroscopy. A minimum value of resistivity of 790 Ω cm, a p-type carrier concentration of 3.6×10 14  cm −3 and a Hall mobility of 22 cm 2  V −1  s −1 were obtained at 75\% N 2 .}, author = {Tvarozek, V. and Shtereva, K. and Novotny, I. and Kovac, J. and Sutta, P. and Srnanek, R. and Vincze, A.}, citeulike-article-id = {4450092}, citeulike-linkout-0 = {http://dx.doi.org/10.1016/j.vacuum.2007.07.056}, citeulike-linkout-1 = {http://linkinghub.elsevier.com/retrieve/pii/S0042207X07002540}, day = {29}, doi = {10.1016/j.vacuum.2007.07.056}, issn = {0042207X}, journal = {Vacuum}, keywords = {conductivity, hall\_measurement, p-type, raman, zno}, month = {October}, number = {2}, pages = {166--169}, posted-at = {2009-05-01 17:20:50}, priority = {2}, title = {RF diode reactive sputtering of n- and p-type zinc oxide thin films}, url = {http://dx.doi.org/10.1016/j.vacuum.2007.07.056}, volume = {82}, year = {2007} }

TY - JOUR ID - citeulike:4450092 L3 - citeulike-article-id:4450092 N2 - We present the relationship between parameters of reactive RF diode sputtering from a zinc oxide (ZnO) target and the crystalline, electrical and optical properties of n-/p-type ZnO thin films. The properties of the ZnO thin films depended on RF power, substrate temperature and, particularly, on working gas mixtures of Ar/O 2 and of Ar/N 2 . Sputtering in Ar+O 2 working gas (up to 75% of O 2 ) improved the structure of an n-type ZnO thin film, from fibrous ZnO grains to columnar crystallites, both preferentially oriented along the c -axis normally to the substrate ( 0 0 2 direction). These films had good piezoelectric properties but also high resistivity ( ρ ≈10 3  Ω cm). ZnO:N p-type films exhibited nanograin structure with preferential 0 0 2 orientation at 25% N 2 and 1 0 0 orientation for higher N 2 content. The presence of nitrogen N O at O-sites forming N O –O acceptor complexes in ZnO was proven by SIMS and Raman spectroscopy. A minimum value of resistivity of 790 Ω cm, a p-type carrier concentration of 3.6×10 14  cm −3 and a Hall mobility of 22 cm 2  V −1  s −1 were obtained at 75% N 2 . IS - 2 JF - Vacuum SN - 0042207X EP - 169 TI - RF diode reactive sputtering of n- and p-type zinc oxide thin films VL - 82 SP - 166 KW - conductivity KW - hall_measurement KW - p-type KW - raman KW - zno AU - Tvarozek, V AU - Shtereva, K AU - Novotny, I AU - Kovac, J AU - Sutta, P AU - Srnanek, R AU - Vincze, A PY - 2007/10/29/ UR - http://dx.doi.org/10.1016/j.vacuum.2007.07.056 ER -