Silicon nanowires as chemical sensors Export

@article{citeulike:3486992, abstract = {Chemical sensitivity of silicon nanowires bundles has been studied. Upon exposure to ammonia gas and water vapor, the electrical resistance of the HF-etched relative to non-etched silicon nanowires sample is found to dramatically decrease even at room temperature. This phenomenon serves as the basis for a new kind of sensor based on silicon nanowires. The sensor, made by a bundle of etched silicon nanowires, is simple and exhibits a fast response, high sensitivity and reversibility. The interactions between gas molecules and silicon nanowires, as well as the effect of silicon oxide sheath on the sensitivity and the mechanisms of gas sensing with silicon nanowires are discussed.}, author = {Zhou, X.}, citeulike-article-id = {3486992}, citeulike-linkout-0 = {http://dx.doi.org/10.1016/S0009-2614(02)02008-0}, citeulike-linkout-1 = {http://linkinghub.elsevier.com/retrieve/pii/S0009-2614(02)02008-0}, day = {07}, doi = {10.1016/S0009-2614(02)02008-0}, issn = {00092614}, journal = {Chemical Physics Letters}, keywords = {nanowires, sensors}, month = {February}, number = {1-2}, pages = {220--224}, posted-at = {2008-11-07 09:44:52}, priority = {2}, title = {Silicon nanowires as chemical sensors}, url = {http://dx.doi.org/10.1016/S0009-2614(02)02008-0}, volume = {369}, year = {2003} }

TY - JOUR ID - citeulike:3486992 L3 - citeulike-article-id:3486992 N2 - Chemical sensitivity of silicon nanowires bundles has been studied. Upon exposure to ammonia gas and water vapor, the electrical resistance of the HF-etched relative to non-etched silicon nanowires sample is found to dramatically decrease even at room temperature. This phenomenon serves as the basis for a new kind of sensor based on silicon nanowires. The sensor, made by a bundle of etched silicon nanowires, is simple and exhibits a fast response, high sensitivity and reversibility. The interactions between gas molecules and silicon nanowires, as well as the effect of silicon oxide sheath on the sensitivity and the mechanisms of gas sensing with silicon nanowires are discussed. IS - 1-2 JF - Chemical Physics Letters SN - 00092614 EP - 224 TI - Silicon nanowires as chemical sensors VL - 369 SP - 220 KW - nanowires KW - sensors AU - Zhou, X PY - 2003/02/07/ UR - http://dx.doi.org/10.1016/S0009-2614(02)02008-0 ER -