Short-channel effect in fully depleted SOI MOSFETs Export

@article{citeulike:4019119, abstract = {The short-channel effect in fully depleted silicon-on-insulator MOSFETs has been studied by a two-dimensional analytical model and by computer simulation. The calculated values agree well with the simulation results. It is found that the vertical field through the depleted film strongly influences the lateral field across the source and drain regions. The short-channel effect can be significantly reduced by decreasing the silicon film thickness}, author = {Young, K. K.}, booktitle = {Electron Devices, IEEE Transactions on}, citeulike-article-id = {4019119}, citeulike-linkout-0 = {http://dx.doi.org/10.1109/16.19942}, citeulike-linkout-1 = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=19942}, doi = {10.1109/16.19942}, journal = {Electron Devices, IEEE Transactions on}, keywords = {device, sce, soi}, number = {2}, pages = {399--402}, posted-at = {2009-02-07 00:44:22}, priority = {2}, title = {Short-channel effect in fully depleted SOI MOSFETs}, url = {http://dx.doi.org/10.1109/16.19942}, volume = {36}, year = {1989} }

TY - JOUR ID - citeulike:4019119 L3 - citeulike-article-id:4019119 N2 - The short-channel effect in fully depleted silicon-on-insulator MOSFETs has been studied by a two-dimensional analytical model and by computer simulation. The calculated values agree well with the simulation results. It is found that the vertical field through the depleted film strongly influences the lateral field across the source and drain regions. The short-channel effect can be significantly reduced by decreasing the silicon film thickness IS - 2 JF - Electron Devices, IEEE Transactions on EP - 402 TI - Short-channel effect in fully depleted SOI MOSFETs VL - 36 T2 - Electron Devices, IEEE Transactions on SP - 399 KW - device KW - sce KW - soi AU - Young, KK PY - 1989/// UR - http://dx.doi.org/10.1109/16.19942 ER -