Monolithic germanium|[sol]|silicon avalanche photodiodes with 340|[nbsp]|GHz gain|[ndash]|bandwidth product Export

@article{citeulike:4209306, abstract = {Significant progress has been made recently in demonstrating that silicon photonics is a promising technology for low-cost optical detectors, modulators and light sources1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12. It has often been assumed, however, that their performance is inferior to InP-based devices. Although this is true in most cases, one of the exceptions is the area of avalanche photodetectors, where silicon's material properties allow for high gain with less excess noise than InP-based avalanche photodetectors and a theoretical sensitivity improvement of 3 dB or more. Here, we report a monolithically grown germanium/silicon avalanche photodetector with a gain–bandwidth product of 340 GHz, a keff of 0.09 and a sensitivity of -28 dB m at 10 Gb s-1. This is the highest reported gain–bandwidth product for any avalanche photodetector operating at 1,300 nm and a sensitivity that is equivalent to mature, commercially available III–V compound avalanche photodetectors. This work paves the way for the future development of low-cost, CMOS-based germanium/silicon avalanche photodetectors operating at data rates of 40 Gb s-1 or higher.}, author = {Kang, Yimin and Liu, Han-Din and Morse, Mike and Paniccia, Mario J. and Zadka, Moshe and Litski, Stas and Sarid, Gadi and Pauchard, Alexandre and Kuo, Ying-Hao and Chen, Hui-Wen and Zaoui, Wissem S. and Bowers, John E. and Beling, Andreas and McIntosh, Dion C. and Zheng, Xiaoguang and Campbell, Joe C.}, citeulike-article-id = {4209306}, citeulike-linkout-0 = {http://dx.doi.org/10.1038/nphoton.2008.247}, citeulike-linkout-1 = {http://dx.doi.org/10.1038/nphoton.2008.247}, day = {07}, doi = {10.1038/nphoton.2008.247}, issn = {1749-4885}, journal = {Nature Photonics}, keywords = {avalanche, germanium, photodiode, silicon}, month = {December}, number = {1}, pages = {59--63}, posted-at = {2009-11-04 07:34:52}, priority = {2}, publisher = {Nature Publishing Group}, title = {Monolithic germanium|[sol]|silicon avalanche photodiodes with 340|[nbsp]|GHz gain|[ndash]|bandwidth product}, url = {http://dx.doi.org/10.1038/nphoton.2008.247}, volume = {3}, year = {2008} }

TY - JOUR ID - citeulike:4209306 L3 - citeulike-article-id:4209306 N2 - Significant progress has been made recently in demonstrating that silicon photonics is a promising technology for low-cost optical detectors, modulators and light sources1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12. It has often been assumed, however, that their performance is inferior to InP-based devices. Although this is true in most cases, one of the exceptions is the area of avalanche photodetectors, where silicon's material properties allow for high gain with less excess noise than InP-based avalanche photodetectors and a theoretical sensitivity improvement of 3 dB or more. Here, we report a monolithically grown germanium/silicon avalanche photodetector with a gain–bandwidth product of 340 GHz, a keff of 0.09 and a sensitivity of -28 dB m at 10 Gb s-1. This is the highest reported gain–bandwidth product for any avalanche photodetector operating at 1,300 nm and a sensitivity that is equivalent to mature, commercially available III–V compound avalanche photodetectors. This work paves the way for the future development of low-cost, CMOS-based germanium/silicon avalanche photodetectors operating at data rates of 40 Gb s-1 or higher. IS - 1 JF - Nature Photonics SN - 1749-4885 EP - 63 TI - Monolithic germanium|[sol]|silicon avalanche photodiodes with 340|[nbsp]|GHz gain|[ndash]|bandwidth product PB - Nature Publishing Group VL - 3 SP - 59 KW - avalanche KW - germanium KW - photodiode KW - silicon AU - Kang, Yimin AU - Liu, Han-Din AU - Morse, Mike AU - Paniccia, Mario AU - Zadka, Moshe AU - Litski, Stas AU - Sarid, Gadi AU - Pauchard, Alexandre AU - Kuo, Ying-Hao AU - Chen, Hui-Wen AU - Zaoui, Wissem AU - Bowers, John AU - Beling, Andreas AU - McIntosh, Dion AU - Zheng, Xiaoguang AU - Campbell, Joe PY - 2008/12/07/ UR - http://dx.doi.org/10.1038/nphoton.2008.247 ER -