Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process Export

@article{Yang2008814, abstract = {A HSQ/PMMA bilayer resist system, in which HSQ as negative tone electron beam resist top layer and PMMA as bottom layer, has been investigated for negative tone lift-off process. Patterns are first defined on the HSQ resist using electron beam lithography, and then transferred into the bottom PMMA layer using oxygen reactive ion etching. Electron beam exposure of HSQ on top of PMMA layer has been characterised, showing the PMMA underlayer has no effect on the exposure of HSQ. Optimum conditions for reactive ion etching of PMMA underlayer have been established. The undercut length in the PMMA layer is found near linearly dependence on etching time. Well defined undercut profile has been achieved in the HSQ/PMMA bilayer resist system, and good negative tone metal lift-off structures have been successfully produced.}, author = {Yang, Haifang and Jin, Aizi and Luo, Qiang and Li, Junjie and Gu, Changzhi and Cui, Zheng}, citeulike-article-id = {4299194}, citeulike-linkout-0 = {http://dx.doi.org/DOI:%25252010.1016/j.mee.2008.01.006}, citeulike-linkout-1 = {http://dx.doi.org/DOI:%252010.1016/j.mee.2008.01.006}, citeulike-linkout-2 = {http://dx.doi.org/DOI:%2010.1016/j.mee.2008.01.006}, citeulike-linkout-3 = {http://www.sciencedirect.com/science/article/B6V0W-4RKMHTS-9/2/44404edc79d02815585aeee2596e5167}, comment = {Proceedings of the Micro- and Nano-Engineering 2007 Conference - MNE 2007}, doi = {DOI:%25252010.1016/j.mee.2008.01.006}, journal = {Microelectronic Engineering}, keywords = {beam, electron, file-import-09-04-11, lithography}, number = {5-6}, posted-at = {2009-04-11 00:37:34}, priority = {2}, title = {Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process}, url = {http://dx.doi.org/DOI:%25252010.1016/j.mee.2008.01.006}, volume = {85}, year = {2008} }

TY - JOUR ID - Yang2008814 L3 - citeulike-article-id:4299194 N2 - A HSQ/PMMA bilayer resist system, in which HSQ as negative tone electron beam resist top layer and PMMA as bottom layer, has been investigated for negative tone lift-off process. Patterns are first defined on the HSQ resist using electron beam lithography, and then transferred into the bottom PMMA layer using oxygen reactive ion etching. Electron beam exposure of HSQ on top of PMMA layer has been characterised, showing the PMMA underlayer has no effect on the exposure of HSQ. Optimum conditions for reactive ion etching of PMMA underlayer have been established. The undercut length in the PMMA layer is found near linearly dependence on etching time. Well defined undercut profile has been achieved in the HSQ/PMMA bilayer resist system, and good negative tone metal lift-off structures have been successfully produced. IS - 5-6 JF - Microelectronic Engineering TI - Electron beam lithography of HSQ/PMMA bilayer resists for negative tone lift-off process VL - 85 KW - beam KW - electron KW - file-import-09-04-11 KW - lithography N1 - Proceedings of the Micro- and Nano-Engineering 2007 Conference - MNE 2007 AU - Yang, Haifang AU - Jin, Aizi AU - Luo, Qiang AU - Li, Junjie AU - Gu, Changzhi AU - Cui, Zheng PY - 2008/// UR - http://dx.doi.org/DOI:%25252010.1016/j.mee.2008.01.006 ER -