Room temperature 1.6 ?m electroluminescence from Ge light emitting diode on Si substrate Export

@article{citeulike:5111798, abstract = {We report the room temperature electroluminescence (EL) at 1.6 μm of a Ge n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device shows a super linear luminescence enhancement at high current. By comparing different n type doping concentrations, we observe that a higher concentration is required to achieve better efficiency of the device. Thermal enhancement effects observed in temperature dependent EL spectra show the capability of this device to operate at room temperature or above. These detailed studies show that Ge can be a good candidate for a Si compatible light emitting device.}, author = {Cheng, Szu L. and Lu, Jesse and Shambat, Gary and Yu, Hyun Y. and Saraswat, Krishna and Vuckovic, Jelena and Nishi, Yoshio}, citeulike-article-id = {5111798}, citeulike-linkout-0 = {http://dx.doi.org/10.1364/OE.17.010019}, citeulike-linkout-1 = {http://www.opticsinfobase.org/abstract.cfm?id=180244}, day = {8}, doi = {10.1364/OE.17.010019}, journal = {Opt. Express}, keywords = {germanium, led, photoluminescence}, month = {June}, number = {12}, pages = {10019--10024}, posted-at = {2009-07-11 02:02:49}, priority = {2}, publisher = {OSA}, title = {Room temperature 1.6 ?m electroluminescence from Ge light emitting diode on Si substrate}, url = {http://dx.doi.org/10.1364/OE.17.010019}, volume = {17}, year = {2009} }

TY - JOUR ID - citeulike:5111798 L3 - citeulike-article-id:5111798 N2 - We report the room temperature electroluminescence (EL) at 1.6 μm of a Ge n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device shows a super linear luminescence enhancement at high current. By comparing different n type doping concentrations, we observe that a higher concentration is required to achieve better efficiency of the device. Thermal enhancement effects observed in temperature dependent EL spectra show the capability of this device to operate at room temperature or above. These detailed studies show that Ge can be a good candidate for a Si compatible light emitting device. IS - 12 JF - Opt. Express EP - 10024 TI - Room temperature 1.6 ?m electroluminescence from Ge light emitting diode on Si substrate PB - OSA VL - 17 SP - 10019 KW - germanium KW - led KW - photoluminescence AU - Cheng, Szu AU - Lu, Jesse AU - Shambat, Gary AU - Yu, Hyun AU - Saraswat, Krishna AU - Vuckovic, Jelena AU - Nishi, Yoshio PY - 2009/June/08/ UR - http://dx.doi.org/10.1364/OE.17.010019 ER -