Engineering light absorption in semiconductor nanowire devices Export

@article{citeulike:5943774, abstract = {The use of quantum and photon confinement has enabled a true revolution in the development of high-performance semiconductor materials and devices1, 2, 3. Harnessing these powerful physical effects relies on an ability to design and fashion structures at length scales comparable to the wavelength of electrons (1 nm) or photons (1 m). Unfortunately, many practical optoelectronic devices exhibit intermediate sizes4, 5 where resonant enhancement effects seem to be insignificant. Here, we show that leaky-mode resonances, which can gently confine light within subwavelength, high-refractive-index semiconductor nanostructures, are ideally suited to enhance and spectrally engineer light absorption in this important size regime. This is illustrated with a series of individual germanium nanowire photodetectors. This notion, together with the ever-increasing control over nanostructure synthesis opens up tremendous opportunities for the realization of a wide range of high-performance, nanowire-based optoelectronic devices, including solar cells6, 7, 8, photodetectors9, 10, 11, 12, 13, optical modulators14 and light sources 14, 15.}, author = {Cao, Linyou and White, Justin S. and Park, Joon-Shik and Schuller, Jon A. and Clemens, Bruce M. and Brongersma, Mark L.}, citeulike-article-id = {5943774}, citeulike-linkout-0 = {http://dx.doi.org/10.1038/nmat2477}, citeulike-linkout-1 = {http://dx.doi.org/10.1038/nmat2477}, day = {05}, doi = {10.1038/nmat2477}, issn = {1476-1122}, journal = {Nature Materials}, keywords = {germanium, nanowire}, month = {July}, number = {8}, pages = {643--647}, posted-at = {2009-10-28 05:34:07}, priority = {2}, publisher = {Nature Publishing Group}, title = {Engineering light absorption in semiconductor nanowire devices}, url = {http://dx.doi.org/10.1038/nmat2477}, volume = {8}, year = {2009} }

TY - JOUR ID - citeulike:5943774 L3 - citeulike-article-id:5943774 N2 - The use of quantum and photon confinement has enabled a true revolution in the development of high-performance semiconductor materials and devices1, 2, 3. Harnessing these powerful physical effects relies on an ability to design and fashion structures at length scales comparable to the wavelength of electrons (1 nm) or photons (1 m). Unfortunately, many practical optoelectronic devices exhibit intermediate sizes4, 5 where resonant enhancement effects seem to be insignificant. Here, we show that leaky-mode resonances, which can gently confine light within subwavelength, high-refractive-index semiconductor nanostructures, are ideally suited to enhance and spectrally engineer light absorption in this important size regime. This is illustrated with a series of individual germanium nanowire photodetectors. This notion, together with the ever-increasing control over nanostructure synthesis opens up tremendous opportunities for the realization of a wide range of high-performance, nanowire-based optoelectronic devices, including solar cells6, 7, 8, photodetectors9, 10, 11, 12, 13, optical modulators14 and light sources 14, 15. IS - 8 JF - Nature Materials SN - 1476-1122 EP - 647 TI - Engineering light absorption in semiconductor nanowire devices PB - Nature Publishing Group VL - 8 SP - 643 KW - germanium KW - nanowire AU - Cao, Linyou AU - White, Justin AU - Park, Joon-Shik AU - Schuller, Jon AU - Clemens, Bruce AU - Brongersma, Mark PY - 2009/07/05/ UR - http://dx.doi.org/10.1038/nmat2477 ER -