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Luminescence of isoelectronic impurities and antisite defects in garnetsby: Y. Zorenko
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AbstractLuminescence centres formation due to the doped isoelectron impurities (II) and antisite defects in the garnets of A3B5O12 (A=Y, Lu, Gd; B=Al, Ga) formula is considered. Substitution of the Y- or Lu-cations by La3+ and Sc3+ II in dodecahedral c-sites and of the Al-cations by Y3+, Lu3+, Sc3+ II in octahedral (a)-sites of garnet lattice results in formation of new emission centers in the UV region. The factors that de-termine a capability of the II to form the luminescence centers are studied. These factors include the possibility of the II to occupy (a)- and c-positions in the garnet lattice, the difference in the ionic radii of II and regular cations (which has to be >0.12 Å) and the differences in their electron structure. The most effective garnet phosphors are shown to be Y3Al5O12 and Lu3Al5O12 doped with the La3+ and Sc3+ II. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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