Study on the amorphous Ta2O5 thin film capacitors deposited by dc magnetron reactive sputtering for multichip module applications Export

@article{citeulike:3100060, abstract = {Tantalum oxide (Ta2O5) thin film capacitors for multichip module (MCM) applications were investigated. Through the capacitor characterization and RBS compositional analysis, it was found that when the sputtering power and Ar flow rate is 200 W and 60 sccm, respectively, the stoichiometric Ta2O5 film can be obtained at the O2 gas flow rate of 50 sccm. The low temperature annealing (150°C) is useful to increase the capacitor yield, but the annelaing in oxygen atmosphere causes the leakage current to increase. When the Ta-oxide capacitors were fabricated on the polymer-laminated substrate, leakage current increased and breakdown field strength decreased. These are due to the surface roughness effects of the polymer films and also the Al bottom electrode layer. It was demonstrated that the Ta2O5 capacitors fabricated on the Upilex-S polymer film can meet the requirements of integrated capacitors for MCM applications.}, author = {Cho, Sung-Dong and Paik, Kyung-Wook}, citeulike-article-id = {3100060}, citeulike-linkout-0 = {http://dx.doi.org/10.1016/S0921-5107(99)00330-X}, citeulike-linkout-1 = {http://www.sciencedirect.com/science/article/B6TXF-3Y15WB5-4/2/0d1f827e55e85c7dfa58ee8a0181d622}, day = {15}, doi = {10.1016/S0921-5107(99)00330-X}, journal = {Materials Science and Engineering B}, keywords = {capacitor}, month = {December}, number = {3}, pages = {108--112}, posted-at = {2008-08-08 12:00:02}, priority = {2}, title = {Study on the amorphous Ta2O5 thin film capacitors deposited by dc magnetron reactive sputtering for multichip module applications}, url = {http://dx.doi.org/10.1016/S0921-5107(99)00330-X}, volume = {67}, year = {1999} }

TY - JOUR ID - citeulike:3100060 L3 - citeulike-article-id:3100060 N2 - Tantalum oxide (Ta2O5) thin film capacitors for multichip module (MCM) applications were investigated. Through the capacitor characterization and RBS compositional analysis, it was found that when the sputtering power and Ar flow rate is 200 W and 60 sccm, respectively, the stoichiometric Ta2O5 film can be obtained at the O2 gas flow rate of 50 sccm. The low temperature annealing (150°C) is useful to increase the capacitor yield, but the annelaing in oxygen atmosphere causes the leakage current to increase. When the Ta-oxide capacitors were fabricated on the polymer-laminated substrate, leakage current increased and breakdown field strength decreased. These are due to the surface roughness effects of the polymer films and also the Al bottom electrode layer. It was demonstrated that the Ta2O5 capacitors fabricated on the Upilex-S polymer film can meet the requirements of integrated capacitors for MCM applications. IS - 3 JF - Materials Science and Engineering B EP - 112 TI - Study on the amorphous Ta2O5 thin film capacitors deposited by dc magnetron reactive sputtering for multichip module applications VL - 67 SP - 108 KW - capacitor AU - Cho, Sung-Dong AU - Paik, Kyung-Wook PY - 1999/12/15/ UR - http://dx.doi.org/10.1016/S0921-5107(99)00330-X ER -