Dual Process Dielectric Formation for Decoupling Capacitors on Flexible Substrates Export

@article{citeulike:3124008, abstract = {Large area, high density integrated capacitors within printed wiring boards can provide a substantial decoupling capacitance with very low parasitic inductance. Tantalum pentoxide (Ta₂O₅) is an excellent dielectric for this application due to the relatively high dielectric constant (\~{} 22-24), however the difficulty of fabricating large, defect-free capacitors has thus far prevented the realization of practical applications. This work demonstrates high performance capacitors with Ta₂O₅ dielectric developed with a two step oxidation scheme consisting of reactive sputtering followed by anodization. Thin films of Ta₂O₅ were deposited by reactive sputtering on silicon and also on Upilex^reg covered glass wafers using dc magnetron sputtering with a gas flow ratio of 10/90 O₂/Ar. In the two-step oxidation scheme, anodization is performed after reactively sputtering tantalum oxide films to obtain a densifled oxide structure. The electrical and physical properties of these two step sputtered/ anodized tantalum oxide films are shown to be superior to those of tantalum oxide films prepared by either anodization or sputtering alone. This work has shown that Ta₂O₅ is a potential dielectric for integrated capacitors that could be used in advanced packaging applications.}, author = {Raghuveer, R. and Burkett, S. L. and Schaper, L. W. and Ulrich, R. K. and Rogers, B. R. and Geil, R. D.}, booktitle = {Components and Packaging Technologies, IEEE Transactions on}, citeulike-article-id = {3124008}, citeulike-linkout-0 = {http://dx.doi.org/10.1109/TCAPT.2007.910915}, citeulike-linkout-1 = {http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4383346}, doi = {10.1109/TCAPT.2007.910915}, journal = {Components and Packaging Technologies, IEEE Transactions on}, keywords = {capacitor}, number = {4}, pages = {579--584}, posted-at = {2008-08-14 16:22:41}, priority = {2}, title = {Dual Process Dielectric Formation for Decoupling Capacitors on Flexible Substrates}, url = {http://dx.doi.org/10.1109/TCAPT.2007.910915}, volume = {30}, year = {2007} }

TY - JOUR ID - citeulike:3124008 L3 - citeulike-article-id:3124008 N2 - Large area, high density integrated capacitors within printed wiring boards can provide a substantial decoupling capacitance with very low parasitic inductance. Tantalum pentoxide (Ta₂O₅) is an excellent dielectric for this application due to the relatively high dielectric constant (~ 22-24), however the difficulty of fabricating large, defect-free capacitors has thus far prevented the realization of practical applications. This work demonstrates high performance capacitors with Ta₂O₅ dielectric developed with a two step oxidation scheme consisting of reactive sputtering followed by anodization. Thin films of Ta₂O₅ were deposited by reactive sputtering on silicon and also on Upilex^reg covered glass wafers using dc magnetron sputtering with a gas flow ratio of 10/90 O₂/Ar. In the two-step oxidation scheme, anodization is performed after reactively sputtering tantalum oxide films to obtain a densifled oxide structure. The electrical and physical properties of these two step sputtered/ anodized tantalum oxide films are shown to be superior to those of tantalum oxide films prepared by either anodization or sputtering alone. This work has shown that Ta₂O₅ is a potential dielectric for integrated capacitors that could be used in advanced packaging applications. IS - 4 JF - Components and Packaging Technologies, IEEE Transactions on EP - 584 TI - Dual Process Dielectric Formation for Decoupling Capacitors on Flexible Substrates VL - 30 T2 - Components and Packaging Technologies, IEEE Transactions on SP - 579 KW - capacitor AU - Raghuveer, R AU - Burkett, SL AU - Schaper, LW AU - Ulrich, RK AU - Rogers, BR AU - Geil, RD PY - 2007/// UR - http://dx.doi.org/10.1109/TCAPT.2007.910915 ER -