Nb/AlO–Al/Nb Josephson junction fabricated using facing target sputtering system Export

@article{citeulike:6071731, abstract = {Nb and Al films have been deposited under the high-density plasma using facing target sputtering applied with DC power. An SiO 2 film has been also deposited using facing target sputtering applied with RF power. We have obtained an damage-less SiO 2 film with good surface smoothness and uniformity under the high deposition rate condition. Fabricated Nb/AlO x –Al/Nb junction indicated the I – V characteristics with small sub-gap leakage current in spite of having no a substrate water-cooled mechanism in the sputtering system. We think it is effective for the facing target sputtering technique to obtain the junction with small sub-gap leakage current, because the γ electrons generated in the plasma are retained and reciprocated between a pair of targets and those hardly do damage to the junction interface during the deposition.}, author = {Morohashi, S. and Ikuta, M. and Yamashita, N. and Miyoshi, T. and Takada, Y.}, citeulike-article-id = {6071731}, citeulike-linkout-0 = {http://dx.doi.org/10.1016/j.physc.2005.02.120}, citeulike-linkout-1 = {http://linkinghub.elsevier.com/retrieve/pii/S0921453405005046}, day = {01}, doi = {10.1016/j.physc.2005.02.120}, issn = {09214534}, journal = {Physica C: Superconductivity}, month = {October}, pages = {1519--1524}, posted-at = {2009-11-04 22:54:39}, priority = {2}, title = {Nb/AlO–Al/Nb Josephson junction fabricated using facing target sputtering system}, url = {http://dx.doi.org/10.1016/j.physc.2005.02.120}, volume = {426-431}, year = {2005} }

TY - JOUR ID - citeulike:6071731 L3 - citeulike-article-id:6071731 N2 - Nb and Al films have been deposited under the high-density plasma using facing target sputtering applied with DC power. An SiO 2 film has been also deposited using facing target sputtering applied with RF power. We have obtained an damage-less SiO 2 film with good surface smoothness and uniformity under the high deposition rate condition. Fabricated Nb/AlO x –Al/Nb junction indicated the I – V characteristics with small sub-gap leakage current in spite of having no a substrate water-cooled mechanism in the sputtering system. We think it is effective for the facing target sputtering technique to obtain the junction with small sub-gap leakage current, because the γ electrons generated in the plasma are retained and reciprocated between a pair of targets and those hardly do damage to the junction interface during the deposition. JF - Physica C: Superconductivity SN - 09214534 EP - 1524 TI - Nb/AlO–Al/Nb Josephson junction fabricated using facing target sputtering system VL - 426-431 SP - 1519 AU - Morohashi, S AU - Ikuta, M AU - Yamashita, N AU - Miyoshi, T AU - Takada, Y PY - 2005/10/01/ UR - http://dx.doi.org/10.1016/j.physc.2005.02.120 ER -