Characteristics of Nb/Al-AlOx-Al/Nb Josephson junction Fabricated using Facing Target Sputtering Export

@article{citeulike:767436, abstract = {Nb and Al films in the Nb/Al-AlOx-Al/Nb junction structure have been deposited using facing target sputtering applied with DC power. In this sputtering system, the g electrons generated in the plasma are retained and reciprocated between a pair of targets and those hardly do damage to the junction interface during the deposition. An SiO2 film has been also deposited using the same sputtering applied with RF power. An anodization process is used for the fabrication process. Fabricated junctions have indicated the I-V characteristics with small sug-gap leakage current (0.11 pA/um2 at 0.49 K). We think it is effective for both the facing target sputtering technique and the anodization process to obtain the junction with small sub-gap leakage current.}, author = {Morohashi, S. and Miyoshi, T. and Takada, Y. and Yamamoto, C. and Matsuo, H. and Kushino, A. and Ohkubo, M.}, citeulike-article-id = {767436}, citeulike-linkout-0 = {http://dx.doi.org/10.1088/1742-6596/43/1/268}, doi = {10.1088/1742-6596/43/1/268}, issn = {1742-6596}, journal = {Journal of Physics: Conference Series}, number = {1}, pages = {1100--1104}, posted-at = {2009-11-04 22:55:23}, priority = {2}, publisher = {Institute of Physics Publishing}, title = {Characteristics of Nb/Al-AlOx-Al/Nb Josephson junction Fabricated using Facing Target Sputtering}, url = {http://dx.doi.org/10.1088/1742-6596/43/1/268}, volume = {43}, year = {2006} }

TY - JOUR ID - citeulike:767436 L3 - citeulike-article-id:767436 N2 - Nb and Al films in the Nb/Al-AlOx-Al/Nb junction structure have been deposited using facing target sputtering applied with DC power. In this sputtering system, the g electrons generated in the plasma are retained and reciprocated between a pair of targets and those hardly do damage to the junction interface during the deposition. An SiO2 film has been also deposited using the same sputtering applied with RF power. An anodization process is used for the fabrication process. Fabricated junctions have indicated the I-V characteristics with small sug-gap leakage current (0.11 pA/um2 at 0.49 K). We think it is effective for both the facing target sputtering technique and the anodization process to obtain the junction with small sub-gap leakage current. IS - 1 JF - Journal of Physics: Conference Series SN - 1742-6596 EP - 1104 TI - Characteristics of Nb/Al-AlOx-Al/Nb Josephson junction Fabricated using Facing Target Sputtering PB - Institute of Physics Publishing VL - 43 SP - 1100 AU - Morohashi, S AU - Miyoshi, T AU - Takada, Y AU - Yamamoto, C AU - Matsuo, H AU - Kushino, A AU - Ohkubo, M PY - 2006/// UR - http://dx.doi.org/10.1088/1742-6596/43/1/268 ER -